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Renesas 71V67703S80BQ

Name: 71V67703S80BQ
Brand: Renesas
SKU: 71V67703S80BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67703S80BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67703S80BQ.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

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Product details

Overview

71V67703S80BQ from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, single-cycle deselect, and burst-mode support via ADV/LBO control. It operates across industrial temperature range (–40°C to +85°C) and targets high-bandwidth cache and buffer applications in networking and telecom line cards.

For engineers reviewing the 71V67703S80BQ datasheet, 71V67703S80BQ pinout, 71V67703S80BQ application, or 71V67703S80BQ equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, burst sequence behavior under LBO control, self-timed write logic with GW/BWE/BWx, and real-world use cases in packet buffering and memory coherency subsystems.

Technical Context

The 71V67703S80BQ implements a synchronous, clock-driven interface with registered address and data inputs, yet uses a flow-through (unregistered) output path - enabling zero-cycle output latency after tCD. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO pin state.

Write operations are fully synchronous and support global (GW) or byte-level (BW1–BW4) control, with BWE gating byte enables and self-timed completion. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 70 mA), and dual 3.3V supplies (VDD core, VDDQ I/O) ensure signal integrity at high speed.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant - defines data bus width and addressing depth for burst-aligned transfers.
Access Time / Max Clock	8.0 ns / 100 MHz; guarantees valid data at Q within 8 ns of CLK rising edge - enables tight timing closure in 100 MHz system buses.
Burst Mode	Four-word burst per address; LBO selects linear or interleaved order - reduces address bus traffic by 75% during sequential reads/writes.
Output Architecture	Flow-through (no output register); tCLZ = 0 ns, tCHZ = 3.5 ns - eliminates output pipeline delay, critical for low-latency cache interfaces.
Power Supply	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; ISB2 = 160 mA (industrial, 100 MHz) - requires separate low-noise 3.3V rails for core and I/O domains.
Operating Temperature	–40°C to +85°C (industrial grade); validated across full range for reliability in base station and industrial control environments.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); PKG100 footprint - compatible with standard SMT reflow profiles and automated optical inspection.

Pinout & Package

71V67703S80BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), designated PKG100, with 0.5 mm pitch and 14 mm × 20 mm body size. Pin 1 is located at top-left corner (marked by dot or bevel), and the device uses standard lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous; latched on rising CLK edge when ADSP/ADSC active - A0–A17 used for 256K×36 mode; A18 unused but must be tied LOW.
CLK	System Clock Input	Single-ended CMOS input; all synchronous timing referenced to rising edge - determines maximum bus throughput (100 MHz).
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BW1–BW4; each BWx controls one 9-bit byte - enables partial writes without read-modify-write.
ADV, LBO	Burst Control Inputs	ADV=LOW advances burst counter; LBO=LOW selects linear burst order (A0/A1 increment), LBO=HIGH selects interleaved - configures memory access pattern for cache line fills.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; flow-through outputs disable on OE HIGH or during write - supports IEEE 1149.1 boundary scan via dedicated pins.
ZZ	Asynchronous Sleep Enable	ZZ=HIGH disables internal clock and reduces current to ≤70 mA - used for dynamic power gating during idle periods in packet processors.

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay (tCLZ = 0 ns), enabling immediate data availability after tCD - essential for zero-wait-state CPU/cache interfaces.
Single-cycle deselect	Chip deactivates in one clock cycle upon CE/CS change - prevents bus contention during rapid context switches in multi-master systems.
Configurable burst order (LBO)	LBO pin statically selects linear (cache-friendly) or interleaved (DMA-friendly) address sequencing - allows hardware-optimized access without firmware overhead.
Self-timed write cycle	Internal timing logic completes writes independent of external timing margins - simplifies PCB layout by relaxing tSW/tHW hold requirements.
Dual 3.3V supply (VDD/VDDQ)	Separate core and I/O rails isolate switching noise and support mixed-voltage system integration - improves signal integrity on 3.3V data buses.

Applications

High-Speed Packet Buffering	Network Processor Cache
Use Scenario: Line-rate buffering of 10G Ethernet frames in ingress/egress pipelines of telecom switches. IC Role / Device Role / Timing Role: Primary burst-access SRAM storing packet headers and metadata with sub-10ns read latency. Use Value: 8.0 ns tCD and flow-through outputs enable deterministic frame forwarding without pipeline stalls at 100 MHz bus clock.	Use Scenario: L2 cache for RISC-based network processors executing deep packet inspection algorithms. IC Role / Device Role / Timing Role: Low-latency, wide-data (36-bit) cache backing store supporting burst-aligned instruction and data fetches. Use Value: Linear burst mode (LBO=LOW) matches 4-word cache line fill pattern, reducing address bus cycles by 75% per cache miss.
Industrial PLC Memory Coherency	Medical Imaging Frame Store
Use Scenario: Real-time synchronization of distributed I/O modules in safety-critical programmable logic controllers. IC Role / Device Role / Timing Role: Shared memory buffer with deterministic read/write timing for inter-module message passing. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments.	Use Scenario: Temporary storage of uncompressed 12-bit medical image tiles (e.g., MRI, CT) during reconstruction pipeline processing. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter frame buffer interfacing to FPGA-based image processors. Use Value: 36-bit bus width and 100 MHz clock support >3.6 Gbps sustained bandwidth required for real-time 4K medical video streams.

High-Speed Packet Buffering

Network Processor Cache

Use Scenario: Line-rate buffering of 10G Ethernet frames in ingress/egress pipelines of telecom switches.

IC Role / Device Role / Timing Role: Primary burst-access SRAM storing packet headers and metadata with sub-10ns read latency.

Use Value: 8.0 ns tCD and flow-through outputs enable deterministic frame forwarding without pipeline stalls at 100 MHz bus clock.

Use Scenario: L2 cache for RISC-based network processors executing deep packet inspection algorithms.

IC Role / Device Role / Timing Role: Low-latency, wide-data (36-bit) cache backing store supporting burst-aligned instruction and data fetches.

Use Value: Linear burst mode (LBO=LOW) matches 4-word cache line fill pattern, reducing address bus cycles by 75% per cache miss.

Industrial PLC Memory Coherency

Medical Imaging Frame Store

Use Scenario: Real-time synchronization of distributed I/O modules in safety-critical programmable logic controllers.

IC Role / Device Role / Timing Role: Shared memory buffer with deterministic read/write timing for inter-module message passing.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments.

Use Scenario: Temporary storage of uncompressed 12-bit medical image tiles (e.g., MRI, CT) during reconstruction pipeline processing.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter frame buffer interfacing to FPGA-based image processors.

Use Value: 36-bit bus width and 100 MHz clock support >3.6 Gbps sustained bandwidth required for real-time 4K medical video streams.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-100AXC	256K × 36, 3.3V, 100 MHz, but uses pipelined (not flow-through) outputs (tCO = 4.5 ns); no LBO pin - fixed linear burst only.	Lacks configurable burst order and zero-latency output - less suitable for cache coherency where burst pattern must match CPU microarchitecture.	Prefer 71V67703S80BQ when flow-through timing or LBO flexibility is required; CY7C1371BV33-100AXC fits if pipeline latency is acceptable and cost is primary.
AS7C3256B-10JIN	256K × 32, 3.3V, 10 ns access, no burst mode - asynchronous interface with CE/OE control; lacks ADV, LBO, GW, and BWE logic.	Designed for legacy parallel bus systems; cannot replace 71V67703S80BQ in clock-synchronous, burst-capable designs without major controller redesign.	Select AS7C3256B-10JIN only for non-burst, non-synchronous applications; 71V67703S80BQ remains optimal for modern high-speed synchronous memory subsystems.

Compared with CY7C1371BV33-100AXC and AS7C3256B-10JIN, the 71V67703S80BQ uniquely combines flow-through output latency, LBO-configurable burst sequencing, and full synchronous write control - making it irreplaceable in applications demanding deterministic sub-10ns read response and flexible burst alignment.

Availability

71V67703S80BQ is available at Aetrix Electronics and suitable for high-reliability networking infrastructure, industrial automation controllers, and medical imaging equipment requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S80BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.

The 71V67703S80BQ belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in network processors, baseband units, and real-time control systems.

FAQ

What is the maximum operating frequency supported by the 71V67703S80BQ?

The 71V67703S80BQ supports up to 100 MHz clock frequency with guaranteed 8.0 ns access time (tCD). This is validated across the full industrial temperature range (–40°C to +85°C) and requires compliance with setup/hold timing windows specified in the datasheet, including tSA ≥ 2 ns and tHA ≥ 0.5 ns.

How does the LBO pin affect burst addressing in the 71V67703S80BQ?

The LBO pin selects burst address order: LBO = LOW enables linear burst (A0/A1 increment sequentially: 00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). This setting is static - LBO must remain stable during burst operation, and changes mid-burst cause undefined behavior in the 71V67703S80BQ.

Can the 71V67703S80BQ operate with only one power supply rail?

No. The 71V67703S80BQ requires two independent 3.3V supplies: VDD (core logic) and VDDQ (I/O drivers). These must be decoupled separately per datasheet guidelines. Using a single rail risks violating VIH/VIL thresholds on I/O pins and may cause data corruption or increased EMI in high-speed operation.

What is the function of the ZZ pin on the 71V67703S80BQ?

The ZZ pin places the 71V67703S80BQ into full sleep mode when driven HIGH. In this state, internal clocks are gated, and supply current drops to ≤70 mA (industrial grade). Data retention is guaranteed, and recovery time (tZZR) is 100 ns - allowing rapid wake-up for burst-intensive workloads without data loss.

Does the 71V67703S80BQ support byte-wide writes, and how are they controlled?

Yes. The 71V67703S80BQ supports four independent 9-bit byte writes via BW1–BW4, gated by BWE. When BWE = LOW and a specific BWx = LOW, only that 9-bit byte is written; all other bytes retain prior data. This eliminates read-modify-write cycles and reduces bus traffic in partial-update scenarios.

71V67703S80BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67703S80BQ FAQ

1.How can I place an order for 71V67703S80BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S80BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S80BQ reliable?

The price and inventory of 71V67703S80BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQ is usually 5 days.

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71V67703S80BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67703S80BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67703S80BQ?

For technical support, including 71V67703S80BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQ requirements.

6.How does Aetrix verify that 71V67703S80BQ is sourced from the original manufacturer or authorized distributors?

All 71V67703S80BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQ meets industry standards.

7.What is the process for return or replacement of 71V67703S80BQ?

All 71V67703S80BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S80BQ part is unused and in its original packaging.

Return procedure for 71V67703S80BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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