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Renesas 71V67703S80BQ8

Name: 71V67703S80BQ8
Brand: Renesas
SKU: 71V67703S80BQ8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67703S80BQ8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67703S80BQ8.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

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Product details

Overview

71V67703S80BQ8 from IDT is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C) in a 100-pin TQFP package. It is used in high-bandwidth networking and telecom data buffering where deterministic timing and burst throughput are critical.

For engineers reviewing the 71V67703S80BQ8 datasheet, 71V67703S80BQ8 pinout, 71V67703S80BQ8 application, or 71V67703S80BQ8 equivalent, key selection criteria include its 8.0 ns tCD timing, 36-bit wide I/O interface, synchronous burst counter architecture, LBO-controlled linear/interleaved addressing, and JEDEC-standard 100-pin TQFP mechanical compatibility.

Technical Context

The 71V67703S80BQ8 implements a synchronous, clock-driven interface with registered address and control inputs (ADSP/ADSC/ADV/CE/CS0/CS1/GW/BWE/BWx), while maintaining a flow-through output path-no output register-enabling clock-to-data delay of exactly 8.0 ns. Its internal burst counter advances on ADV low and selects next addresses based on LBO state (linear vs. interleaved).

Write operations support multiple modes: global write (GW active), byte-selectable write (BWE + BW1–BW4), or combination thereof. Power management includes asynchronous ZZ input for full sleep mode (IZZ ≤ 70 mA), and all synchronous signals meet strict setup/hold timing relative to CLK with tSA = 2 ns and tHA = 0.5 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9,175,040 bits); enables 36-bit parallel data transfers per cycle.
Access Time (tCD)	8.0 ns max; guarantees valid output data within 8.0 ns after rising CLK edge-critical for 100 MHz system timing closure.
Maximum Clock Frequency	100 MHz; supports sustained burst read/write at 400 MB/s effective bandwidth (36-bit × 100 MHz).
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow independent noise isolation and voltage scaling.
Operating Temperature	0°C to +70°C (Commercial grade); validated for stable operation in standard industrial enclosures without forced cooling.
Power Consumption	IDDACT = 210 mA max (active), ISB2 = 140 mA max (clock-running standby); enables predictable thermal budgeting in dense PCB layouts.
Burst Mode	Four-word burst initiated by single address; LBO pin selects linear or interleaved sequence-reduces address bus traffic by 75% per burst.

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner cut; pin 14 is VSS-compatible but not mandatory tie-down; pin 64 (ZZ) must be actively driven or pulled to VSS for reliable sleep control.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous 19-bit address bus; A0–A17 used for 256K×36 configuration; A18 unused but present for pin compatibility with 512K×18 variants.
CLK	Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; defines tCYC = 10 ns minimum (100 MHz).
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.)-enables partial writes without bus turnaround.
ADSP / ADSC	Address Status Inputs	ADSP (processor-triggered) and ADSC (cache-controller-triggered) load address register; both active-low and gated by CE-supports dual-bus system integration.
LBO	Burst Order Select	Asynchronous static input; LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10); must remain stable during burst operation.
ZZ	Sleep Mode Input	Asynchronous active-high; places device in full sleep (IZZ ≤ 70 mA); requires tZZR ≥ 100 ns recovery before next access.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional data bus; flow-through output path eliminates output register latency; I/OP1–I/OP4 are parity bits for ECC-capable systems.

Key Features

Feature	Design Value
Flow-Through Output Architecture	Eliminates output register delay-ensures tCD = 8.0 ns is purely propagation delay, not register-to-output timing-simplifies timing analysis in high-speed backplanes.
Single-Cycle Deselect	Device enters high-Z output state within one CLK cycle after CS/CE deassertion-prevents bus contention during rapid chip switching in multi-SRAM systems.
Self-Timed Write Cycle	Internal write completion detection allows variable-length write cycles without external wait-state generation-reduces controller overhead in FPGA-based memory controllers.
Configurable Burst Addressing	LBO pin selects linear or interleaved burst order-matches native addressing patterns of PowerPC, MIPS, and x86 cache line fills without software remapping.
Separate Core & I/O Supplies	VDD (core) and VDDQ (I/O) decoupling enables independent power domain design-reduces switching noise coupling from I/O drivers into sensitive core logic.

Applications

Telecom Line Card Buffering	Network Processor Data Cache
Use Scenario: High-speed packet buffering in OC-192/STM-64 line cards handling 10 Gbps aggregate traffic. IC Role / Device Role / Timing Role: Primary 36-bit-wide data buffer between SERDES PHY and network processor; provides deterministic 8.0 ns read latency for real-time header parsing. Use Value: Flow-through outputs and single-cycle deselect prevent pipeline stalls during burst reads/writes, sustaining >95% bus utilization under full line-rate traffic.	Use Scenario: On-chip L2 cache extension for multi-core network processors executing deep-pipeline packet classification algorithms. IC Role / Device Role / Timing Role: Synchronous burst-access SRAM serving as tightly coupled instruction/data scratchpad; clocked at 100 MHz aligned with processor bus. Use Value: Linear burst mode (LBO = LOW) matches 16-byte cache line size, delivering four 36-bit words per address-reducing address bus cycles by 75% versus non-burst access.
Baseband Digital Signal Processing	Industrial Real-Time Controller Memory
Use Scenario: Frame-level data storage in 4G/LTE baseband units performing FFT, channel estimation, and MIMO matrix operations. IC Role / Device Role / Timing Role: Dual-port accessible memory bank interfaced to DSP DMA engine; supports concurrent burst reads and writes using separate CE/CS groups. Use Value: Byte-write enables (BW1–BW4) allow partial result updates without full-word overwrites-critical for iterative algorithm convergence with minimal memory bandwidth penalty.	Use Scenario: Deterministic motion control buffer in CNC machine controllers requiring sub-microsecond jitter-free memory access for servo loop execution. IC Role / Device Role / Timing Role: Low-jitter, fixed-latency SRAM for storing position/velocity lookup tables and real-time trajectory buffers-clocked synchronously with motion controller FPGA. Use Value: Guaranteed 8.0 ns tCD and 0.5 ns address hold time (tHA) ensure timing margin against worst-case process/voltage/temperature corners-eliminating need for dynamic calibration.

Telecom Line Card Buffering

Network Processor Data Cache

Use Scenario: High-speed packet buffering in OC-192/STM-64 line cards handling 10 Gbps aggregate traffic.

IC Role / Device Role / Timing Role: Primary 36-bit-wide data buffer between SERDES PHY and network processor; provides deterministic 8.0 ns read latency for real-time header parsing.

Use Value: Flow-through outputs and single-cycle deselect prevent pipeline stalls during burst reads/writes, sustaining >95% bus utilization under full line-rate traffic.

Use Scenario: On-chip L2 cache extension for multi-core network processors executing deep-pipeline packet classification algorithms.

IC Role / Device Role / Timing Role: Synchronous burst-access SRAM serving as tightly coupled instruction/data scratchpad; clocked at 100 MHz aligned with processor bus.

Use Value: Linear burst mode (LBO = LOW) matches 16-byte cache line size, delivering four 36-bit words per address-reducing address bus cycles by 75% versus non-burst access.

Baseband Digital Signal Processing

Industrial Real-Time Controller Memory

Use Scenario: Frame-level data storage in 4G/LTE baseband units performing FFT, channel estimation, and MIMO matrix operations.

IC Role / Device Role / Timing Role: Dual-port accessible memory bank interfaced to DSP DMA engine; supports concurrent burst reads and writes using separate CE/CS groups.

Use Value: Byte-write enables (BW1–BW4) allow partial result updates without full-word overwrites-critical for iterative algorithm convergence with minimal memory bandwidth penalty.

Use Scenario: Deterministic motion control buffer in CNC machine controllers requiring sub-microsecond jitter-free memory access for servo loop execution.

IC Role / Device Role / Timing Role: Low-jitter, fixed-latency SRAM for storing position/velocity lookup tables and real-time trajectory buffers-clocked synchronously with motion controller FPGA.

Use Value: Guaranteed 8.0 ns tCD and 0.5 ns address hold time (tHA) ensure timing margin against worst-case process/voltage/temperature corners-eliminating need for dynamic calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-100AXC	256K × 32-bit organization; no parity bits; 100 MHz, 8 ns; uses different burst counter logic (fixed linear only).	Lacks I/OP1–I/OP4 parity pins; not suitable for ECC-critical telecom or safety-certified industrial systems.	Select when 32-bit width suffices and parity is unnecessary; verify ADSP/ADSC timing compatibility with host controller.
AS7C3256B-10JIN	256K × 32-bit; 3.3V; 10 ns access; no burst mode; asynchronous OE; no LBO or ADV pins.	No burst capability limits throughput to 32-bit × 100 MHz = 3.2 GB/s vs. 71V67703S80BQ8's 3.6 GB/s burst rate; higher latency per word.	Choose for cost-sensitive, non-burst applications where deterministic single-word access suffices and timing margins are relaxed.

Compared with CY7C1371BV33-100AXC and AS7C3256B-10JIN, the 71V67703S80BQ8 uniquely delivers 36-bit width with parity, programmable burst order (LBO), and flow-through timing-making it irreplaceable in telecom line cards and safety-critical real-time controllers requiring guaranteed sub-8.5 ns latency and ECC support.

Availability

71V67703S80BQ8 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor acceleration, baseband signal processing, and industrial real-time control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V67703S80BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions for communications, computing, and industrial markets.

The 71V67703S80BQ8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for bandwidth-intensive, low-latency applications in networking equipment, base stations, and real-time embedded systems demanding deterministic timing and burst efficiency.

FAQ

What is the maximum operating frequency supported by the 71V67703S80BQ8?

The 71V67703S80BQ8 supports a maximum clock frequency of 100 MHz, corresponding to a minimum clock cycle time (tCYC) of 10 ns. This is validated for the 8.0 ns access time grade (S80) across the commercial temperature range (0°C to +70°C) with VDD and VDDQ at 3.3 V ±5%. Operation beyond 100 MHz violates AC timing specifications and may result in data corruption.

Does the 71V67703S80BQ8 support both linear and interleaved burst modes?

Yes, the 71V67703S80BQ8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). LBO is an asynchronous static input and must remain stable during burst operation to avoid undefined address sequencing in the 71V67703S80BQ8.

How does the flow-through output architecture of the 71V67703S80BQ8 affect system timing?

Unlike registered-output SRAMs, the 71V67703S80BQ8 uses a flow-through output path-data propagates directly from the memory array to I/O pins without passing through an output register. This eliminates register-to-output delay, making tCD (clock-to-data) purely combinational (8.0 ns max). As a result, system timing analysis is simplified, and the 71V67703S80BQ8 achieves tighter setup margins in high-speed interfaces such as network processor buses.

Can the 71V67703S80BQ8 be used in industrial temperature applications?

No-the 71V67703S80BQ8 is specified only for commercial temperature range (0°C to +70°C). For industrial operation (–40°C to +85°C), IDT offers the 71V67703S80BQI variant (same pinout, same speed grade, but qualified to industrial temp). Using the 71V67703S80BQ8 outside its rated temperature range risks parameter drift, increased leakage, and potential functional failure-not guaranteed by IDT's characterization or testing for the 71V67703S80BQ8.

What is the role of the ZZ pin on the 71V67703S80BQ8, and how is it used?

The ZZ pin on the 71V67703S80BQ8 is an asynchronous active-HIGH input that places the device into full sleep mode, reducing supply current to ≤70 mA (IZZ). In sleep mode, the internal clock is gated, outputs go high-Z, and data retention is guaranteed. To resume operation, ZZ must be held LOW for ≥100 ns (tZZR) before the next valid access; the 71V67703S80BQ8 must also be deselected (CE/CS high) during wake-up.

71V67703S80BQ8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67703S80BQ8 FAQ

1.How can I place an order for 71V67703S80BQ8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S80BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S80BQ8 reliable?

The price and inventory of 71V67703S80BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQ8 is usually 5 days.

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Once your 71V67703S80BQ8 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for 71V67703S80BQ8?

For technical support, including 71V67703S80BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQ8 requirements.

6.How does Aetrix verify that 71V67703S80BQ8 is sourced from the original manufacturer or authorized distributors?

All 71V67703S80BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQ8 meets industry standards.

7.What is the process for return or replacement of 71V67703S80BQ8?

All 71V67703S80BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQ8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S80BQ8 part is unused and in its original packaging.

Return procedure for 71V67703S80BQ8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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