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Renesas 71V67703S80BQG
- Part No.:
- 71V67703S80BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S80BQG.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,679
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Product details
Overview
71V67703S80BQG from IDT (now Renesas) is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking packet buffers and real-time DSP data caching.
For engineers reviewing the 71V67703S80BQG datasheet, 71V67703S80BQG pinout, 71V67703S80BQG application, or 71V67703S80BQG equivalent, key selection criteria include burst address counter behavior, flow-through vs. pipelined output timing, ZZ-controlled sleep mode current (≤70 mA), 100-pin TQFP mechanical compatibility, and 3.3V I/O supply (VDDQ) decoupling requirements.
Technical Context
The 71V67703S80BQG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling zero-latency read data delivery after tCD. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, supporting four-word bursts per address.
Write operations are fully synchronous and support multiple modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4). Power management includes asynchronous ZZ input for full sleep mode (IZZ ≤70 mA), with guaranteed data retention and no clock gating during active operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9,175,040 bits); supports 512K × 18-bit mapping via address pin reconfiguration |
| Access Time / Max Frequency | 8.0 ns access time; supports sustained 100 MHz clock operation with tCYC = 10 ns |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies enable I/O voltage domain isolation |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence; ADV controls counter advance |
| Power-Down Current | IZZ ≤ 70 mA in full sleep mode (ZZ HIGH); ISB1 ≤ 70 mA in CMOS standby (device deselected) |
| Operating Temperature | –40°C to +85°C industrial grade; validated across full voltage and frequency range |
| Output Architecture | Flow-through (unregistered) outputs; tCD = 8.0 ns max; tCLZ = 0 ns; no pipeline delay between CLK and DOUT |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67703S80BQG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K×36 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy: CE (active LOW), CS0 (active HIGH), CS1 (active LOW) |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV advances burst counter; ADSP/ADSC load address register; LBO selects linear (LOW) or interleaved (HIGH) burst order |
| OE | Asynchronous Output Enable | Drives I/O pins to high-Z when HIGH; does not affect internal timing or power state |
| ZZ | Asynchronous Sleep Mode | Internally gates CLK and reduces IDD to ≤70 mA; data retention guaranteed; no reset required on wake |
| I/O0–I/O31, I/OP1–I/OP4 | Bi-directional Data I/O | 36-bit synchronous data bus; input path registered, output path flow-through; VDDQ-referenced I/O |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS (common ground) require independent decoupling; NC pins must be left floating or tied to VSS |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: valid data appears at I/O pins within 8.0 ns of CLK rise-critical for zero-wait-state bus interfaces |
| Single-cycle deselect | Device enters high-Z output state within one clock cycle of CE/CS deassertion-enables clean bus sharing in multi-SRAM systems |
| Configurable burst sequencing | LBO pin statically selects linear or interleaved 4-word burst order-matches processor cache line layouts without firmware overhead |
| Self-timed write cycle | Internal timing logic completes write based on GW/BWx sampling at CLK edge-no external write pulse width constraints |
| Asynchronous ZZ sleep mode | Reduces supply current to ≤70 mA while retaining memory contents-enables low-power idle states in telecom line cards |
| Industrial temperature support | Full 8.0 ns / 100 MHz performance guaranteed from –40°C to +85°C-suitable for base station and industrial control deployments |
Applications
| High-Speed Packet Buffering | DSP Data Caching |
|---|---|
|
Use Scenario: Line-rate buffering of 10G Ethernet frames in network switch ASIC interface. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet memory with burst-aligned reads/writes to match MAC-layer DMA engine. Use Value: 8.0 ns tCD and flow-through outputs enable deterministic sub-10 ns read latency; single-cycle deselect prevents bus contention during frame handoff. |
Use Scenario: Real-time coefficient storage and operand buffering in radar signal processing FPGAs. IC Role / Device Role / Timing Role: Low-latency data scratchpad accessed by dual-port FPGA fabric with synchronized clock domain. Use Value: 100 MHz operation sustains 400 MB/s burst bandwidth; LBO-configurable burst order aligns with FFT butterfly addressing patterns. |
| Telecom Control Plane Memory | Industrial Motion Controller Buffer |
|
Use Scenario: Storing protocol stack state tables and session context in carrier-grade media gateways. IC Role / Device Role / Timing Role: Non-volatile-retentive working memory interfaced to ARM-based control CPU via synchronous parallel bus. Use Value: ZZ sleep mode cuts idle power by >60% versus active standby; industrial temp rating ensures reliability in fanless chassis. |
Use Scenario: Interpolated position lookup table storage and real-time motion profile buffering in CNC drive modules. IC Role / Device Role / Timing Role: Deterministic-access buffer synchronizing servo loop updates with encoder sampling clock. Use Value: Single-cycle deselect guarantees clean bus release between motion command fetches; 3.3V I/O matches modern MCU voltage domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100BGXI | 100-pin BGA; 256K × 32 organization; 10 ns access; no LBO or ADV pins; different burst control scheme | Lacks configurable burst order and ADV-suspend capability; requires PCB redesign for BGA footprint and signal routing | Choose for space-constrained designs where BGA is preferred and burst flexibility is not required. |
| AS7C362000B-10JCN | 100-pin TQFP; 256K × 36; 10 ns access; no ZZ sleep mode; only global write (no byte write) | Higher power in standby (ISB1 ≈ 120 mA); lacks low-power sleep mode and fine-grained write control | Choose when cost is primary and system-level power management handles idle states externally. |
Compared with CY7C1371BV33-100BGXI and AS7C362000B-10JCN, the 71V67703S80BQG uniquely delivers 8.0 ns access in TQFP with both LBO-configurable burst sequencing and ZZ-controlled deep sleep-enabling tighter timing margins and lower system power without package or architecture trade-offs.
Availability
71V67703S80BQG is available at Aetrix Electronics and suitable for high-speed packet buffering, DSP data caching, telecom control plane memory, and industrial motion controller buffer applications requiring stable component supply, long-term lifecycle support, and industrial-temperature assurance.
Supply support for 71V67703S80BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly IDT) is a global semiconductor leader specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V67703S80BQG belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic low-latency data access in infrastructure equipment where burst efficiency, power-aware operation, and industrial reliability are mandatory.
FAQ
What is the maximum operating frequency supported by the 71V67703S80BQG?
The 71V67703S80BQG supports up to 100 MHz clock frequency with guaranteed 8.0 ns access time (tCD) under industrial temperature and voltage conditions. This corresponds to a minimum clock cycle time (tCYC) of 10 ns. Performance is validated across the full –40°C to +85°C range with VDD and VDDQ at 3.3 V ±5%.
Does the 71V67703S80BQG support byte-level write control?
Yes, the 71V67703S80BQG supports granular write control via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus. When combined with BWE and GW, this allows full 36-bit, partial-byte, or global writes-all synchronized to the CLK rising edge.
How does the LBO pin affect burst behavior in the 71V67703S80BQG?
The LBO pin selects burst address order: when LBO = LOW, the 71V67703S80BQG uses linear burst sequencing (00→01→10→11); when LBO = HIGH, it uses interleaved sequencing (00→01→11→10). LBO is static-must remain stable during burst operation-and is sampled asynchronously at configuration time.
What is the power consumption of the 71V67703S80BQG in sleep mode?
In full sleep mode (ZZ HIGH), the 71V67703S80BQG draws ≤70 mA supply current (IZZ) at VDD = 3.465 V and TA = +85°C. This mode retains all memory contents and resumes normal operation within tZZR ≤100 ns after ZZ returns LOW-no initialization or refresh required.
Is the 71V67703S80BQG pin-compatible with other members of the 71V67xx family?
The 71V67703S80BQG shares the same 100-pin TQFP footprint and core signal mapping with 71V67903 variants, but differs in address pin usage (A18 active in 512K×18 mode) and BW3/BW4 functionality (supported in 71V67703, not 71V67903). Direct substitution requires validation of memory size, burst control, and byte-write requirements.
71V67703S80BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S80BQG FAQ
1.How can I place an order for 71V67703S80BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BQG reliable?
The price and inventory of 71V67703S80BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQG is usually 5 days.
3.What payment methods are accepted for 71V67703S80BQG?
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4.How is shipping managed for 71V67703S80BQG?
71V67703S80BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BQG?
For technical support, including 71V67703S80BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQG requirements.
6.How does Aetrix verify that 71V67703S80BQG is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQG meets industry standards.
7.What is the process for return or replacement of 71V67703S80BQG?
All 71V67703S80BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BQG part is unused and in its original packaging.
Return procedure for 71V67703S80BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BQG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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