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Renesas 71V67703S80BQG8
- Part No.:
- 71V67703S80BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S80BQG8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,843
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Product details
Overview
71V67703S80BQG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and 8.0 ns access time at 100 MHz. It features burst counter logic, linear/interleaved burst mode via LBO, self-timed write with global/byte write control, and industrial-grade operation (–40°C to +85°C). Used in high-speed networking buffers and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67703S80BQG8 datasheet, 71V67703S80BQG8 pinout, 71V67703S80BQG8 application, or 71V67703S80BQG8 equivalent, key selection criteria include burst-mode compatibility, 100-pin TQFP package constraints, flow-through output latency, ZZ-controlled sleep mode, and 3.3V I/O core separation (VDDQ).
Technical Context
The 71V67703S80BQG8 implements a synchronous, clock-driven architecture with registered address/data inputs and unregistered (flow-through) outputs-eliminating output register delay. Its internal burst address counter advances on ADV=LOW, supporting four-word bursts per address with LBO-selectable linear or interleaved sequences.
Write operations are self-timed and configurable: Global Write (GW) enables full 36-bit writes, while BWE + BW1–BW4 allow independent 9-bit byte writes. Power management includes asynchronous ZZ input for full-sleep mode (IZZ ≤ 70 mA), and CE/CS0/CS1 decoding supports multi-chip memory banking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping on compatible variants |
| Access Time | 8.0 ns at 100 MHz clock - guarantees data valid within one clock cycle after CLK rise |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - independent rails enable noise isolation |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence - eliminates external address generation logic |
| Output Architecture | Flow-through (no output register) - zero-cycle output latency; tCD = 8.0 ns max, tCLZ = 0 ns |
| Power-Down Control | Asynchronous ZZ input - reduces current to ≤70 mA in full sleep; no clock gating required |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for telecom infrastructure and industrial controllers |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; top-side view shown in datasheet Figure 5309 drw 02a.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous; latched on rising CLK edge when ADSP/ADSC active - supports 256K×36 (A0–A17) or 512K×18 (A0–A18) |
| CLK | System Clock Input | Single-ended, non-inverted reference for all synchronous timing - defines tCYC = 10 ns (100 MHz) |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte - enables partial writes without bus contention |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) are active-LOW synchronous load triggers - support dual-bus system integration |
| LBO | Burst Order Select | DC-level input (not sampled on clock); HIGH = interleaved, LOW = linear - must remain static during burst operation |
| ZZ | Asynchronous Sleep Enable | HIGH forces full sleep; internally gates CLK and reduces IDD to ≤70 mA - no sequencing required with VDD/VDDQ |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; flow-through outputs disable on OE HIGH or during write - no output register adds determinism |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.0 ns matches tCYC, enabling true single-cycle read turnaround |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation - simplifies FPGA/CPU interface |
| Single-cycle deselect | Chip deactivates in one clock cycle upon CE/CS assertion change - prevents bus glitches during bank switching |
| Linear/interleaved burst mode | LBO pin configures burst address sequence at power-up - matches processor cache line ordering (e.g., Pentium vs. PowerPC) |
| Independent VDD/VDDQ supplies | Core and I/O power rails separated - allows noise-sensitive analog sections to share VDDQ ground without coupling into core logic |
Applications
| High-Speed Network Packet Buffer | Industrial PLC Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches with line-rate forwarding. IC Role / Device Role / Timing Role: 71V67703S80BQG8 serves as a low-latency, burst-access buffer between MAC and switch fabric - accepting 4-word bursts from DMA engines. Use Value: Flow-through outputs deliver frame header data in ≤8.0 ns, enabling real-time classification before full frame arrival. | Use Scenario: Caching sensor fusion data (accelerometer, gyro, temperature) in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: 71V67703S80BQG8 acts as a synchronized scratchpad memory - interfacing with dual-port microcontroller buses via ADSP/ADSC handshaking. Use Value: Single-cycle deselect ensures clean context switching between I/O scan and control algorithm execution phases. |
| Telecom Baseband Processor Cache | Radar Signal Processing FIFO |
Use Scenario: Providing instruction/data cache for DSP cores in 4G/LTE baseband units operating under strict thermal budgets. IC Role / Device Role / Timing Role: 71V67703S80BQG8 functions as a low-power, high-bandwidth L1 cache - leveraging ZZ sleep during idle TDMA slots. Use Value: ZZ-controlled sleep cuts standby current to ≤70 mA, reducing average power by >60% versus always-on SRAMs. | Use Scenario: Capturing ADC samples from phased-array radar receivers requiring precise timing alignment across multiple channels. IC Role / Device Role / Timing Role: 71V67703S80BQG8 operates as a synchronous FIFO - using ADV to suspend bursts during beam-steering reconfiguration. Use Value: ADV-driven burst suspension maintains sample coherency across channel groups without external state machines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV18-100AXC | 512K × 18-bit only; no 256K × 36-bit config; uses different burst counter logic (linear-only) | Requires PCB redesign for 18-bit data path; lacks LBO flexibility for interleaved cache lines | Select only if 18-bit bus width and fixed linear burst suffice; verify ADV timing compatibility |
| AS7C3256A-10JIN | Asynchronous interface; no CLK, ADSP, ADV, or burst logic; 15 ns access, 3.3V only | Cannot replace in burst-driven systems; requires wait-state insertion and external address sequencing | Use only in legacy designs lacking clocked control; not suitable for 71V67703S80BQG8's flow-through timing model |
Compared with CY7C1371BV18-100AXC and AS7C3256A-10JIN, the 71V67703S80BQG8 uniquely delivers 256K×36 organization with programmable burst order, flow-through latency, and synchronous deselect - critical for modern packet-processing pipelines where deterministic timing outweighs raw density.
Availability
71V67703S80BQG8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, industrial PLC data caches, and telecom baseband processor caches requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for 71V67703S80BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V67703S80BQG8 belongs to IDT's high-performance synchronous SRAM product line, engineered for deterministic, low-latency memory access in real-time communication and control systems where burst efficiency and power-aware operation are essential.
FAQ
What is the maximum clock frequency supported by the 71V67703S80BQG8?
The 71V67703S80BQG8 supports up to 100 MHz clock frequency with 8.0 ns access time. This is validated across the industrial temperature range (–40°C to +85°C) and requires tCYC ≥ 10 ns. Higher frequencies (e.g., 117 MHz) are specified only for the 7.5 ns speed grade (71V67703S75BQG8), not this 8.0 ns variant.
Does the 71V67703S80BQG8 support both 256K×36 and 512K×18 configurations on the same device?
No - the 71V67703S80BQG8 is specifically configured as 256K × 36-bit. The 512K × 18-bit organization is implemented in the pin-compatible 71V67903 family member. While both share the same 100-pin TQFP package and AC timing, address pin count (A0–A17 vs. A0–A18) and BW3/BW4 functionality differ, making them distinct orderables.
How does the LBO pin affect burst behavior in the 71V67703S80BQG8?
The LBO pin statically selects burst order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). It is sampled asynchronously at power-up or reset and must remain stable during burst operation. Changing LBO mid-burst causes undefined address sequencing and must be avoided per datasheet Note 4 in Table 16.
Can the 71V67703S80BQG8 operate with VDD and VDDQ supplied from separate regulators?
Yes - VDD (core) and VDDQ (I/O) are electrically isolated supplies. They may be powered from independent 3.3 V ±5% sources, enabling optimized noise management. However, both must ramp monotonically during power-up, and no pin voltage may exceed VDDQ during ramp - per Absolute Maximum Ratings Table 3, Note 6.
What happens to output drivers when OE is HIGH and the device is selected?
When OE is HIGH, all I/O pins (I/O0–I/O31, I/OP1–I/OP4) enter high-impedance state regardless of chip select status. This is an asynchronous function - outputs disable immediately without waiting for CLK. During write cycles, outputs are also disabled automatically, ensuring no bus contention even if OE remains LOW.
71V67703S80BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S80BQG8 FAQ
1.How can I place an order for 71V67703S80BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BQG8 reliable?
The price and inventory of 71V67703S80BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQG8 is usually 5 days.
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4.How is shipping managed for 71V67703S80BQG8?
71V67703S80BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BQG8?
For technical support, including 71V67703S80BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQG8 requirements.
6.How does Aetrix verify that 71V67703S80BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQG8 meets industry standards.
7.What is the process for return or replacement of 71V67703S80BQG8?
All 71V67703S80BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BQG8 part is unused and in its original packaging.
Return procedure for 71V67703S80BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BQG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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