Renesas 71V67703S80BQGI

Overview

71V67703S80BQGI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking packet buffers and cache-coherent memory subsystems.

For engineers reviewing the 71V67703S80BQGI datasheet, 71V67703S80BQGI pinout, 71V67703S80BQGI application, or 71V67703S80BQGI equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70 mA), flow-through output latency, 100-pin TQFP mechanical compatibility, and support for synchronous CE/CS0/CS1 chip select arbitration in multi-SRAM systems.

Technical Context

The 71V67703S80BQGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling zero-cycle output delay after clock edge. Its internal burst counter advances on ADV assertion and selects sequence order via LBO pin state (linear vs. interleaved).

Write operations are fully synchronous and support four modes: global write (GW), byte write enable (BWE) with BW1–BW4, and combinations thereof. Power management includes asynchronous ZZ input that gates internal clock and reduces supply current to ≤70 mA in full sleep mode while retaining data.

Key Specifications

Pinout & Package

71V67703S80BQGI is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed thermal pad (not electrically connected). Pin 1 is located at top-left corner when notch is oriented upward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C33128PFSIG, the 71V67703S80BQGI uniquely delivers hardware-configurable burst sequencing, asynchronous sleep entry, and true single-cycle deselect-making it optimal for cache-coherent and power-constrained real-time systems where deterministic latency and low quiescent power are mandatory.

Availability

71V67703S80BQGI is available at Aetrix Electronics and suitable for networking packet buffers, CPU cache coherency modules, industrial PLC memory expansion, and radar signal processing FIFOs requiring stable component supply, long-term lifecycle assurance, and industrial-temperature operation.

Supply support for 71V67703S80BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.

The 71V67703S80BQGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking infrastructure, real-time control, and embedded signal processing applications.

FAQ

What memory configurations does the 71V67703S80BQGI support?

The 71V67703S80BQGI supports two configurable organizations: 256K × 36 bits (address range A0–A17) or 512K × 18 bits (A0–A18), selected via external address decoding and pin strapping. This dual-mode flexibility allows system designers to optimize bus width and density without changing the physical device, making the 71V67703S80BQGI adaptable to both 32-bit and 64-bit data paths in networking and embedded applications.

How does the LBO pin affect burst behavior in the 71V67703S80BQGI?

The LBO (Linear Burst Order) pin on the 71V67703S80BQGI statically selects between linear (LBO = LOW) and interleaved (LBO = HIGH) burst address sequences for the four-word burst. This setting must remain stable during operation and directly maps to CPU cache line layouts-e.g., linear mode suits PowerPC-style addressing, while interleaved aligns with Intel Pentium. The 71V67703S80BQGI does not support dynamic LBO switching mid-burst.

What is the role of the ZZ pin in the 71V67703S80BQGI, and how does it impact power consumption?

The ZZ pin on the 71V67703S80BQGI provides asynchronous entry into full sleep mode: when driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70 mA (industrial grade) while retaining memory contents. No clock-stopping sequence or register programming is required-making the 71V67703S80BQGI ideal for intermittent-traffic applications like packet buffering where power savings during idle periods are critical.

Does the 71V67703S80BQGI support byte-level writes, and how are they implemented?

Yes, the 71V67703S80BQGI supports granular byte-level writes via synchronous BWE (Byte Write Enable) and four BWx inputs (BW1–BW4), each controlling a 9-bit byte (e.g., BW1 → I/O0–I/O7 + I/OP1). When BWE is LOW at the CLK rising edge, active BWx signals gate corresponding write drivers; inactive bytes retain prior data. This eliminates need for external byte-mask logic and enables efficient partial-line updates in cache or buffer applications using the 71V67703S80BQGI.

What package type and pin count does the 71V67703S80BQGI use, and is it RoHS-compliant?

The 71V67703S80BQGI uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 0.5 mm pitch and 14 mm × 20 mm body size. It is RoHS-compliant and qualifies as a "green part" per IDT's ordering information-containing no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. The "BQGI" suffix explicitly denotes this industrial-grade, lead-free TQFP variant of the 71V67703S80BQGI.