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Renesas 71V67703S80BQGI8
- Part No.:
- 71V67703S80BQGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S80BQGI8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,117
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Product details
Overview
71V67703S80BQGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, burst counter support, and single-cycle deselect. It operates across industrial temperature range (–40°C to +85°C) and is packaged in a 100-pin TQFP (PKG100), targeting high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V67703S80BQGI8 datasheet, 71V67703S80BQGI8 pinout, 71V67703S80BQGI8 application, or 71V67703S80BQGI8 equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP pin mapping, burst mode behavior under LBO control, self-timed write implementation, and real-world use cases in packet buffering and memory co-processor interfaces.
Technical Context
The 71V67703S80BQGI8 implements a synchronous, clock-driven interface with registered address and data inputs, but flow-through (unregistered) outputs-enabling zero-latency read data delivery after tCD. Its internal burst address counter advances on ADV=LOW and supports both linear and interleaved sequences selected by the asynchronous LBO pin.
Write operations are fully synchronous and support multiple modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4). Power management includes asynchronous ZZ-controlled sleep mode with guaranteed data retention and ISB1 standby current ≤70 mA at industrial grade.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9M-bit total); supports 512K × 18-bit via address remapping |
| Access Time / Max Clock | 8.0 ns access time; supports up to 100 MHz system clock (tCYC = 10 ns) |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Burst Mode | Four-word burst per address; sequence order controlled by LBO (linear/interleaved) |
| Operating Temperature | Industrial grade: –40°C to +85°C; validated for continuous operation in base station and router environments |
| Power-Down Current | IZZ ≤ 70 mA in full sleep mode (ZZ HIGH); enables low-power idle states in always-on systems |
| Output Architecture | Flow-through (no output register); tCLZ = 0 ns, tCHZ = 3.5 ns - critical for deterministic read latency |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, PKG100 footprint. Pinout validated per IDT document 5309 drw 02a for 256K × 36 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous; latched on rising CLK edge with ADSP/ADSC assertion; A0–A17 used for 256K × 36 addressing |
| CLK | System Clock Input | Single-ended CMOS input; all synchronous timing referenced to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip memory banks |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides BWE/BWx; BWE gates BW1–BW4; BW1 controls I/O0–I/O7 + I/OP1 (9-bit byte) |
| OE | Asynchronous Output Enable | Drives I/O pins to high-Z when HIGH; independent of CLK - enables bus sharing without timing constraints |
| LBO | Burst Order Selection | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Asynchronous Sleep Mode | HIGH disables internal clock and reduces IDD to IZZ; retains data; no setup delay required before wake |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit bus) | Synchronous input (registered), flow-through output; I/OP1–I/OP4 are parity bits for ECC-capable systems |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.0 ns is pure array access + driver propagation - essential for cycle-accurate timing in pipelined processors |
| Self-timed write cycle | Internal timing logic determines write completion without external wait-state generation; simplifies controller design and improves throughput |
| Single-cycle deselect | Device enters high-Z state within one CLK cycle after CE/CS deassertion - prevents bus contention during rapid bank switching |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing enables optimization for sequential vs. cache-line access patterns without firmware change |
| Separate VDD/VDDQ supplies | Isolates core logic noise from I/O drivers; allows independent power sequencing and noise filtering for signal integrity in dense PCB layouts |
Applications
| Network Packet Buffering | Baseband Processor Cache |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in telecom line cards where deterministic latency and burst bandwidth are critical. IC Role / Device Role / Timing Role: High-speed dual-port-like buffer using burst reads/writes; serves as first-level temporary storage between MAC and switch fabric. Use Value: 100 MHz clock + 8.0 ns tCD enables ≥800 MB/s sustained read throughput; flow-through output avoids pipeline stalls in real-time frame processing. |
Use Scenario: Acting as instruction/data cache for DSP-based baseband processors in 4G/LTE radio units requiring low-latency memory access. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state execution for critical control loops and FFT buffers. Use Value: Single-cycle deselect and burst capability reduce average access time by 35% vs. non-burst SRAMs; industrial temp rating ensures reliability in outdoor cabinets. |
| Industrial PLC Memory Expansion | Medical Imaging Data FIFO |
|
Use Scenario: Extending local memory in programmable logic controllers handling deterministic motion control with tight jitter budgets. IC Role / Device Role / Timing Role: Off-chip memory mapped as fast RAM; accessed via microcontroller's synchronous memory interface. Use Value: Asynchronous ZZ sleep mode cuts idle power by >85%; industrial temp range and 3.3V I/O ensure compatibility with legacy 3.3V control buses. |
Use Scenario: Buffering raw sensor data from CT/MRI detector arrays before compression and transfer to host processor. IC Role / Device Role / Timing Role: High-bandwidth FIFO staging memory; accepts burst writes from ADC interface and feeds burst reads to DMA engine. Use Value: 36-bit bus width matches 32-bit + 4-bit parity data path; tOHZ = 3.5 ns guarantees clean bus release before next DMA cycle begins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 256K × 36, 100 MHz, 3.3V; uses QCC (quad ceramic) package; no LBO pin - fixed linear burst only | Lacks configurable burst order; requires layout change due to different thermal/mechanical profile and pinout | Select when LBO flexibility is unnecessary and ceramic packaging is mandated for high-reliability mil-aero use. |
| AS7C3256B-10JCN | 256K × 36, 10 ns access (100 MHz), 3.3V; no flow-through output - registered outputs add 1-cycle latency | Higher read latency impacts real-time throughput; lacks ZZ sleep mode - higher standby power | Choose only if board space requires smaller 84-pin SOJ package and deterministic tCD is not required. |
Compared with CY7C1371BV33-100AXC and AS7C3256B-10JCN, the 71V67703S80BQGI8 uniquely delivers configurable burst order, true flow-through output, and low-power ZZ sleep - making it optimal for latency-sensitive, power-constrained, and flexible memory subsystem designs.
Availability
71V67703S80BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, baseband processor cache, industrial PLC memory expansion, and medical imaging data FIFO applications requiring stable component supply and long-term industrial-grade availability.
Supply support for 71V67703S80BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V67703S80BQGI8 belongs to IDT's 71V67xx family of synchronous SRAMs, engineered for ultra-low latency and burst efficiency in infrastructure equipment where deterministic timing and power-aware operation are mandatory.
FAQ
What is the maximum operating frequency supported by the 71V67703S80BQGI8?
The 71V67703S80BQGI8 supports up to 100 MHz clock frequency with 8.0 ns access time (tCD), validated across the industrial temperature range (–40°C to +85°C). This corresponds to a minimum clock cycle time (tCYC) of 10 ns. Higher speeds (e.g., 117 MHz) require the 7.5 ns variant (71V67703S75BQGI8), not this part.
Does the 71V67703S80BQGI8 support both linear and interleaved burst modes?
Yes, the 71V67703S80BQGI8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear sequence (00→01→10→11); LBO = HIGH selects interleaved (00→01→11→10). LBO is asynchronous and must remain static during operation - it is not sampled on clock edges.
How does the flow-through output architecture of the 71V67703S80BQGI8 affect system timing?
The 71V67703S80BQGI8 uses a flow-through output path with no output register, meaning valid data appears on I/O pins tCD = 8.0 ns after the rising CLK edge. This eliminates 1-cycle output latency, enabling immediate consumption by downstream logic and simplifying timing closure in high-speed synchronous buses.
What is the function of the ZZ pin on the 71V67703S80BQGI8, and how does it impact power consumption?
The ZZ pin on the 71V67703S80BQGI8 enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to IZZ ≤ 70 mA (industrial grade). Data is retained, and recovery requires no setup time - the device resumes operation on the next valid CLK edge after ZZ returns LOW.
Can the 71V67703S80BQGI8 be used in a 512K × 18-bit configuration?
Yes, the 71V67703S80BQGI8 is functionally identical to the 71V67903 and supports 512K × 18-bit organization by remapping address bits (e.g., A18 used as MSB). Pin configurations differ slightly - BW3/BW4 are NC in 512K × 18 mode - and the 71V67703S80BQGI8 datasheet explicitly confirms dual-configuration support in its description and pin tables.
71V67703S80BQGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S80BQGI8 FAQ
1.How can I place an order for 71V67703S80BQGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BQGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BQGI8 reliable?
The price and inventory of 71V67703S80BQGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQGI8 is usually 5 days.
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71V67703S80BQGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BQGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BQGI8?
For technical support, including 71V67703S80BQGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQGI8 requirements.
6.How does Aetrix verify that 71V67703S80BQGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BQGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQGI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S80BQGI8?
All 71V67703S80BQGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BQGI8 part is unused and in its original packaging.
Return procedure for 71V67703S80BQGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BQGI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
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M24C02-FMC6TG
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
Microchip Technology
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