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Renesas 71V67703S80BQI
- Part No.:
- 71V67703S80BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S80BQI.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,057
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Product details
Overview
71V67703S80BQI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency, features burst-mode operation with LBO-selectable linear/interleaved addressing, and includes self-timed write control via GW/BWE/BWx inputs. It is used in high-speed networking buffers and FPGA co-processor memory subsystems.
For engineers reviewing the 71V67703S80BQI datasheet, 71V67703S80BQI pinout, 71V67703S80BQI application, or 71V67703S80BQI equivalent, key selection criteria include its 100-pin TQFP package, 3.3V core/I/O supply, industrial temperature range (–40°C to +85°C), and support for synchronous burst reads/writes with flow-through output architecture.
Technical Context
The 71V67703S80BQI implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling minimal read latency after clock edge. Its internal burst counter advances on ADV=LOW and selects next addresses based on LBO state (linear vs. interleaved), delivering four consecutive 36-bit words per burst.
Write operations are fully synchronous and configurable: global writes (GW), byte writes (BW1–BW4), or byte-write-enabled (BWE-gated) modes. Power management includes asynchronous ZZ-controlled sleep mode with <70 µA standby current and guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant |
| Access Time / Max Frequency | 8.0 ns access time; supports up to 100 MHz clock frequency (tCYC = 10 ns) |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range for stable timing |
| Power Consumption | IDD = 230 mA max (100 MHz, industrial); ISB2 = 160 mA (clock running, deselected) |
| Output Architecture | Flow-through (no output register); tCD = 8.0 ns (clock-to-data), tCLZ = 0 ns (clock-to-output active) |
| Burst Control | LBO input selects linear or interleaved 4-word burst sequence; ADV advances counter synchronously |
Pinout & Package
71V67703S80BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 is marked by corner notch; top-view numbering follows standard counter-clockwise layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP/ADSC asserted; A0–A17 used for 256K×36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select: CE (active LOW), CS0 (active HIGH), CS1 (active LOW); all required for device enable |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z when HIGH; does not affect internal timing or burst state |
| LBO | Burst Order Select | DC-level input (LOW = linear, HIGH = interleaved); must remain static during burst operation |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; reduces ICC to ≤70 µA while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path; flow-through output path; VDDQ-referenced |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.0 ns matches tCYC, enabling zero-cycle-read latency in pipelined systems |
| Configurable burst addressing | LBO pin selects linear or interleaved 4-word burst order - critical for cache line alignment in RISC processors |
| Single-cycle deselect | Device enters high-Z output state within one CLK cycle after CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation; supports GW, BWE, and individual BWx control |
| Industrial-grade power management | ZZ sleep mode draws ≤70 µA at VDD = 3.465 V; retains data across –40°C to +85°C without refresh |
Applications
| High-Speed Network Packet Buffer | FPGA-Based Protocol Accelerator |
|---|---|
|
Use Scenario: Storing incoming Ethernet frames in a line-rate switch ASIC before classification and forwarding. IC Role / Device Role / Timing Role: Primary packet buffer SRAM; provides deterministic 8.0 ns read access to support 10 Gbps+ throughput with burst-aligned DMA transfers. Use Value: Flow-through outputs and single-cycle deselect eliminate pipeline stalls during rapid buffer switching between ingress/egress engines. |
Use Scenario: Offloading TCP/IP checksum and encryption operations from host CPU using FPGA-based hardware accelerator. IC Role / Device Role / Timing Role: Shared instruction/data memory for FPGA soft-core processor; synchronized to FPGA fabric clock via CLK input. Use Value: 100 MHz burst capability delivers 4×36-bit words per cycle - matching 128-bit AXI bus width and maximizing bandwidth efficiency. |
| Real-Time Industrial PLC Memory | Avionics Data Acquisition Buffer |
|
Use Scenario: Holding sensor fusion results and control loop state variables in safety-critical programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic low-latency memory for real-time task scheduling; operates across –40°C to +85°C without derating. Use Value: Industrial temperature rating and ZZ sleep mode enable fail-safe data retention during brown-out events without external backup power. |
Use Scenario: Capturing high-resolution ADC samples from flight control sensors at 1 MS/s for post-flight analysis. IC Role / Device Role / Timing Role: Circular buffer memory interfaced to FPGA-based sampling controller; uses burst reads to empty full frames into DDR. Use Value: Linear burst mode (LBO = LOW) ensures sequential address increment - simplifying buffer pointer management in DO-254-compliant firmware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100BZXI | 256K × 36, 3.3V, 100 MHz, but uses QCC (PLCC) package; no LBO pin - fixed linear burst only | Lacks interleaved burst mode; requires PCB redesign for PLCC footprint and different pinout | Select if legacy PLCC layout exists and interleaved burst is unnecessary |
| AS7C3256B-10JIN | 256K × 36, 3.3V, 10 ns access (100 MHz), but asynchronous interface - no CLK, ADV, or burst logic | No burst capability; requires external address sequencing logic; higher read latency (tAA = 10 ns) | Select only for non-burst, cost-sensitive designs where timing margin allows asynchronous control |
Compared with CY7C1371DV33-100BZXI and AS7C3256B-10JIN, the 71V67703S80BQI uniquely delivers synchronous burst operation with selectable linear/interleaved addressing in a surface-mount TQFP package - essential for high-throughput, low-latency embedded memory subsystems.
Availability
71V67703S80BQI is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based accelerators, and industrial control systems requiring stable component supply with long-term lifecycle assurance.
Supply support for 71V67703S80BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications and computing infrastructure.
The 71V67703S80BQI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in network processors, FPGAs, and real-time embedded controllers.
FAQ
What is the maximum operating frequency supported by the 71V67703S80BQI?
The 71V67703S80BQI supports up to 100 MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 10 ns and an access time of 8.0 ns. This rating is guaranteed over the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. Operation beyond 100 MHz is not characterized or supported.
Does the 71V67703S80BQI support both linear and interleaved burst modes?
Yes, the 71V67703S80BQI supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (00→01→10→11), while LBO = HIGH selects interleaved (00→01→11→10). The LBO input is asynchronous and static - it must not change during active burst operation to avoid undefined address sequencing.
What is the function of the ZZ pin on the 71V67703S80BQI?
The ZZ pin on the 71V67703S80BQI is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70 µA (industrial grade) while maintaining full data retention. ZZ requires no setup/hold timing relative to CLK and may be asserted at any time - including mid-burst - without data loss.
How many byte-write enable signals does the 71V67703S80BQI provide, and what do they control?
The 71V67703S80BQI provides four individual byte-write enable inputs: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus: BW1 → I/O0–I/O7 + I/OP1; BW2 → I/O8–I/O15 + I/OP2; BW3 → I/O16–I/O23 + I/OP3; BW4 → I/O24–I/O31 + I/OP4. All outputs are disabled during any active byte write.
Is the 71V67703S80BQI pin-compatible with the 71V67903 series?
No - the 71V67703S80BQI (256K × 36) and 71V67903 (512K × 18) share functional similarity and package options, but are not pin-compatible. Key differences include address pin count (A0–A17 vs. A0–A18), absence of BW3/BW4 on 71V67903, and distinct pin assignments for NC locations. Interchange requires PCB redesign and firmware address mapping updates.
71V67703S80BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S80BQI FAQ
1.How can I place an order for 71V67703S80BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BQI reliable?
The price and inventory of 71V67703S80BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQI is usually 5 days.
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71V67703S80BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BQI?
For technical support, including 71V67703S80BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQI requirements.
6.How does Aetrix verify that 71V67703S80BQI is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQI meets industry standards.
7.What is the process for return or replacement of 71V67703S80BQI?
All 71V67703S80BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BQI part is unused and in its original packaging.
Return procedure for 71V67703S80BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BQI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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