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Renesas 71V67703S80BQI8
- Part No.:
- 71V67703S80BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S80BQI8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,982
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Product details
Overview
71V67703S80BQI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.0ns access time at 100MHz clock frequency, single-cycle deselect, and linear/interleaved burst mode controlled by LBO pin. It operates across industrial temperature range (–40°C to +85°C) and is used in high-bandwidth packet buffering for network switches and telecom line cards.
For engineers reviewing the 71V67703S80BQI8 datasheet, 71V67703S80BQI8 pinout, 71V67703S80BQI8 application, or 71V67703S80BQI8 equivalent, key selection criteria include burst address sequencing behavior, ZZ-controlled sleep mode current (≤70mA), flow-through vs. registered output timing, and TQFP-100 package compatibility with legacy memory bus layouts.
Technical Context
This SRAM implements a synchronous, clock-driven interface with dual chip-select logic (CS0 active-HIGH, CS1 active-LOW), ADSP/ADSC address status inputs for processor/cache coherency, and ADV-controlled burst advance. The internal burst counter generates four sequential addresses per initial address, with ordering determined by LBO pin state (linear or interleaved).
Write operations support global write (GW) and byte-write (BW1–BW4 + BWE) modes, with self-timed write cycles triggered on rising CLK edge. Output drivers are flow-through (no output register), enabling zero-latency data delivery after tCD delay, while input path is fully registered for setup/hold compliance at 100MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping - enables flexible data bus width matching in 32-bit or 64-bit systems. |
| Access Time / Max Frequency | 8.0ns / 100MHz - guarantees deterministic read latency under worst-case industrial temperature and voltage (3.135V–3.465V). |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - requires separate low-noise regulation for core and I/O rails to meet AC timing. |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache-line alignment in CPU or DMA subsystems. |
| Sleep Current (IZZ) | ≤70mA at VDD = max, ZZ = HIGH - enables low-power standby in always-on networking equipment without external power gating. |
| Package | JEDEC-standard 100-pin TQFP (14mm × 20mm) - compatible with standard SMT reflow profiles and legacy PCB footprints. |
| Temperature Range | –40°C to +85°C - qualified for industrial-grade deployment in base stations, industrial controllers, and automotive infotainment gateways. |
Pinout & Package
71V67703S80BQI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch, lead-free and RoHS-compliant. Pin 1 is located at top-left corner (marked dot), with pins numbered counter-clockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K×36 mode; A18 unused but must be tied LOW. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows hierarchical memory banking in multi-SRAM systems. |
| GW, BWE, BW1–BW4 | Write Control | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) - enables precise ECC or partial-word updates. |
| CLK, ADV, LBO | Timing & Burst Control | CLK drives all synchronous registers; ADV advances burst counter on LOW; LBO sets burst order asynchronously - no clock required for LBO change. |
| OE, ZZ | Output & Power Control | OE is asynchronous output enable (LOW = drive); ZZ is asynchronous sleep entry (HIGH = full power-down, ≤70mA IZZ). |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; flow-through outputs (no register), registered inputs - eliminates output skew but requires careful trace length matching. |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and multiple VSS pins require dedicated decoupling (0.1µF + 10µF per VDD/VDDQ pair) near package corners. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: data appears on I/O pins within tCD (≤8.0ns) after CLK rise - essential for zero-wait-state CPU interfaces. |
| Single-cycle deselect | Device enters high-Z output state within one CLK cycle after chip disable - prevents bus contention during rapid memory bank switching. |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequence - matches Intel Pentium or Motorola PowerPC cache-line addressing requirements. |
| Self-timed write cycle | Internal timing generator completes write without external wait-state signaling - simplifies controller logic and reduces FPGA resource usage. |
| Industrial temperature operation | Guaranteed functionality from –40°C to +85°C with full AC/DC specs - suitable for uncooled telecom chassis and factory-floor PLCs. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-speed, low-latency buffer between MAC and switch fabric; handles 10Gbps+ line rates with burst reads/writes. Use Value: 8.0ns access + flow-through output ensures sub-10ns read turnaround, enabling wire-speed frame processing without pipeline stalls. |
Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers and optical transport terminals. IC Role / Device Role / Timing Role: Dual-port accessible memory for time-division multiplexing engines; synchronized to system clock domain. Use Value: Single-cycle deselect and burst mode reduce controller overhead, allowing 4× data throughput per address cycle in TDM slot buffering. |
| Industrial PLC Data Logging | Automotive Gateway Buffering |
|
Use Scenario: Cyclic logging of sensor I/O states and control commands in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile shadow RAM buffer interfaced to ARM Cortex-M7 MCU via parallel bus; retains data during brownouts. Use Value: ZZ sleep mode draws ≤70mA during idle periods, extending backup battery life in fanless, sealed enclosures. |
Use Scenario: CAN FD and Ethernet AVB message buffering in automotive domain controllers and central gateways. IC Role / Device Role / Timing Role: Shared memory for protocol translation between high-speed Ethernet and deterministic CAN/FlexRay buses. Use Value: Industrial temp rating (–40°C to +85°C) and flow-through timing ensure deterministic latency for safety-critical message routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 256K × 36, 100MHz, 100-pin TQFP, but uses registered outputs (not flow-through) and lacks LBO burst-order control. | Requires additional clock cycle for output registration; unsuitable where zero-output-latency is mandatory (e.g., CPU cache tags). | Select only if system controller can absorb extra 1-cycle output delay and burst sequencing is handled externally. |
| AS7C3256B-10JIN | 256K × 36, 10ns/100MHz, 100-pin TQFP, flow-through output, but no ZZ sleep mode and only commercial temp (0°C to +70°C). | Cannot enter ultra-low-power sleep state; not rated for industrial ambient conditions - limits use in outdoor or factory environments. | Choose only for cost-sensitive, non-industrial applications where continuous operation without sleep is acceptable. |
Compared with CY7C1371DV33-100AXC and AS7C3256B-10JIN, the 71V67703S80BQI8 uniquely delivers flow-through timing *plus* hardware-configurable burst order *plus* industrial-grade sleep mode - making it the sole option for deterministic, low-power, high-throughput embedded buffering where all three traits are simultaneously required.
Availability
71V67703S80BQI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data logging, and automotive gateway buffering requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S80BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for infrastructure and industrial markets.
The 71V67703S80BQI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in telecom, networking, and real-time control systems.
FAQ
What is the maximum clock frequency supported by the 71V67703S80BQI8?
The 71V67703S80BQI8 supports up to 100MHz clock frequency with guaranteed 8.0ns access time under industrial temperature and voltage conditions. This is validated across the full –40°C to +85°C range with VDD and VDDQ at 3.3V ±5%. Higher frequencies (e.g., 117MHz) require the 7.5ns speed grade (71V67703S75BQI8), not this part.
Does the 71V67703S80BQI8 support both linear and interleaved burst modes?
Yes, the 71V67703S80BQI8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence (00→01→10→11), LBO = HIGH selects interleaved (00→01→11→10). This configuration is static and must not change during active operation, as stated in the datasheet Note 4 for tCFG.
How does the ZZ pin affect power consumption in the 71V67703S80BQI8?
When ZZ is driven HIGH, the 71V67703S80BQI8 enters full sleep mode with supply current limited to ≤70mA (industrial grade), regardless of clock activity. The device retains data and resumes operation within tZZR (100ns) after ZZ returns LOW - no reset or reinitialization is needed.
What is the function of the ADV pin in the 71V67703S80BQI8?
The ADV pin controls burst address advancement in the 71V67703S80BQI8: when ADV is LOW on the rising CLK edge, the internal burst counter increments to the next address; when ADV is HIGH, the counter holds, suspending burst progression. This allows precise control over multi-word transfers without issuing new addresses.
Can the 71V67703S80BQI8 operate with mixed voltage supplies (e.g., 3.3V core and 2.5V I/O)?
No - the 71V67703S80BQI8 requires VDD = 3.3V ±5% for core logic and VDDQ = 3.3V ±5% for I/O. The datasheet specifies no 2.5V I/O support; using 2.5V on VDDQ violates absolute maximum ratings and invalidates AC timing parameters including tCD and tOHZ.
71V67703S80BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S80BQI8 FAQ
1.How can I place an order for 71V67703S80BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BQI8 reliable?
The price and inventory of 71V67703S80BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BQI8 is usually 5 days.
3.What payment methods are accepted for 71V67703S80BQI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S80BQI8 transactions.
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4.How is shipping managed for 71V67703S80BQI8?
71V67703S80BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BQI8?
For technical support, including 71V67703S80BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BQI8 requirements.
6.How does Aetrix verify that 71V67703S80BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BQI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S80BQI8?
All 71V67703S80BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BQI8 part is unused and in its original packaging.
Return procedure for 71V67703S80BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
Microchip Technology
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