Renesas 71V67703S80PFGI
- Part No.:
- 71V67703S80PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67703S80PFGI.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V67703S80PFGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency, features burst-mode addressing (linear/interleaved via LBO), self-timed write with global/byte write control, and industrial temperature operation (–40°C to +85°C). Used in high-bandwidth packet buffering and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67703S80PFGI datasheet, 71V67703S80PFGI pinout, 71V67703S80PFGI application, or 71V67703S80PFGI equivalent, key selection criteria include burst address sequencing behavior, flow-through vs. registered output architecture, ZZ-controlled sleep mode current (≤70 mA), and TQFP-100 package compatibility with legacy memory bus layouts.
Technical Context
This SRAM implements a synchronous, clock-driven interface with dual chip-select logic (CS0 active-HIGH, CS1 active-LOW) and address status inputs (ADSP/ADSC) for processor/cache coherency. Burst operation is initiated by ADV=LOW and sequenced by an internal binary counter whose order depends on LBO state-linear (LBO=LOW) or interleaved (LBO=HIGH).
The device uses a flow-through output path (no output register), enabling clock-to-data delay as low as 8.0 ns, while input data is registered on CLK rising edge. Write control supports four independent 9-bit byte lanes (BW1–BW4), global write (GW), and byte write enable (BWE), all synchronized to CLK with defined setup/hold timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via address mapping |
| Access Time | 8.0 ns maximum at 100 MHz clock; enables tight read-cycle timing in high-speed bus interfaces |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains prevent noise coupling |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence-critical for cache line alignment |
| Power Management | ZZ input enables full sleep mode (IZZ ≤70 mA); asynchronous entry/exit with tZZR = 100 ns recovery |
| Operating Temperature | –40°C to +85°C industrial grade; validated across voltage and frequency corners |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); pin-compatible with IDT71V67903 in same footprint |
Pinout & Package
71V67703S80PFGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner cut; thermal pad not present. Compatible with standard reflow profiles for lead-free assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous; latched on rising CLK edge when ADSP/ADSC active; A0–A17 used for 256K×36 mode |
| CLK | System Clock Input | Single-ended CMOS input; all synchronous timing referenced to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows multi-chip memory expansion |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides byte writes; BWE gates BWx; BW1–BW4 each control one 9-bit I/O byte (I/O0–7/I/OP1, etc.) |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z immediately when HIGH-enables single-cycle deselect |
| LBO | Burst Order Select | DC-level input; LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Sleep Mode Input | Asynchronous; HIGH disables internal clock and reduces ICC to ≤70 mA; no sequencing required |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input registered, output flow-through; VDDQ-referenced I/O drivers |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay-ensures tCD ≤8.0 ns and supports true single-cycle deselect via OE |
| Configurable burst addressing | LBO pin selects linear or interleaved 4-word burst order, matching x86 or PowerPC cache line fetch patterns |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation-reduces controller overhead |
| Independent byte-write capability | Four 9-bit byte lanes (BW1–BW4) allow partial writes without read-modify-write, preserving data integrity |
| Low-power sleep mode | ZZ-controlled full sleep draws ≤70 mA (industrial temp); tZZR = 100 ns ensures rapid wake-up in burst-intensive systems |
Applications
| Network Packet Buffering | High-Speed Cache Controller Interface |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or PCIe packets in switch ASICs where latency must be bounded and burst depth matches MTU size. IC Role / Device Role / Timing Role: Primary data buffer with flow-through outputs delivering deterministic 8.0 ns read access and single-cycle deselect for back-to-back packet handling. Use Value: Eliminates output register delay and enables guaranteed sub-10 ns read turnaround-critical for 10 Gbps+ line-rate forwarding. | Use Scenario: Serving as L2/L3 cache tag/data RAM in embedded RISC-V or ARM-based SoCs requiring burst-aligned cache line fills. IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to cache controller's ADSP/ADSC handshake signals; LBO configured for interleaved burst to match CPU prefetch pattern. Use Value: Linear/interleaved burst selection and 100 MHz clock support align precisely with cache line width and fill bandwidth requirements. |
| Industrial Motion Control Memory | Medical Imaging Data FIFO |
Use Scenario: Holding real-time servo position/velocity data in CNC controllers where deterministic access and low jitter are mandatory. IC Role / Device Role / Timing Role: Deterministic-access memory mapped into motion processor's local bus; ZZ pin used for dynamic power gating during idle motion segments. Use Value: Industrial temperature rating (–40°C to +85°C) and guaranteed tCD/tCLZ specs ensure timing compliance across thermal cycling in factory environments. | Use Scenario: Acting as line buffer between FPGA-based image preprocessor and ADC/DAC in ultrasound or MRI front-ends. IC Role / Device Role / Timing Role: High-bandwidth, low-latency FIFO with burst reads/writes synchronized to pixel clock; VDDQ isolation prevents analog domain noise coupling. Use Value: Separate VDD/VDDQ supplies and 7 pF I/O capacitance minimize signal integrity risk at 100 MHz pixel rates with minimal board-level termination. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-100AXC | 128K × 36-bit; 100 MHz, 8.5 ns; different pinout (119-ball BGA only); no LBO or ADV | Lacks burst-order configuration and address-status handshake; requires external burst counter logic | Select when board space permits BGA and burst control is handled externally |
| AS7C33128PFS-10BIN | 256K × 36-bit; 100 MHz, 8.5 ns; TQFP-100; supports linear burst only (no LBO) | Fixed linear burst mode; no interleaved option; higher ISB2 standby current (160 mA vs. 160 mA max) | Choose when interleaved burst is unnecessary and cost sensitivity outweighs configurability |
Compared with CY7C1362BV33-100AXC and AS7C33128PFS-10BIN, the 71V67703S80PFGI uniquely delivers configurable burst order (LBO), dual-address-status handshake (ADSP/ADSC), and guaranteed 8.0 ns access in TQFP-100-making it optimal for legacy-compatible, high-determinism designs.
Availability
71V67703S80PFGI is available at Aetrix Electronics and suitable for network packet buffering, industrial motion control, and medical imaging data FIFO applications requiring stable component supply, long-term lifecycle support, and industrial-grade temperature performance.
Supply support for 71V67703S80PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for industrial, networking, and automotive markets.
The 71V67703S80PFGI belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic, low-latency memory subsystems in bandwidth-constrained real-time systems where flow-through timing and burst configurability are critical.
FAQ
What is the maximum operating frequency supported by the 71V67703S80PFGI?
The 71V67703S80PFGI supports up to 100 MHz clock frequency with 8.0 ns access time, as specified in its commercial and industrial temperature grades. This frequency is guaranteed under VDD = 3.3 V ±5%, TA = –40°C to +85°C, and proper signal integrity conditions including controlled impedance and termination.
Does the 71V67703S80PFGI support both linear and interleaved burst modes?
Yes, the 71V67703S80PFGI supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the burst follows linear order (00→01→10→11); when LBO = HIGH, it follows interleaved order (00→01→11→10). This selection is static and must remain stable during operation.
How does the 71V67703S80PFGI achieve single-cycle deselect functionality?
The 71V67703S80PFGI achieves single-cycle deselect through its asynchronous OE (Output Enable) input. When OE transitions HIGH while the device is selected, I/O pins enter high-impedance state within tOHZ ≤3.5 ns-enabling immediate bus release without waiting for clock edges or internal state transitions.
What is the role of the ADSP and ADSC pins on the 71V67703S80PFGI?
The ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) pins serve as synchronous address latch strobes. ADSP is gated by CE and used for processor-initiated accesses; ADSC is independent and used for cache coherency operations. Both trigger the address register on their falling edge when CE is active, enabling dual-bus arbitration.
Can the 71V67703S80PFGI operate with different core and I/O supply voltages?
No-the 71V67703S80PFGI requires matched 3.3 V ±5% supplies: VDD for core logic and VDDQ for I/O drivers. The datasheet specifies no tolerance for voltage mismatch, and operation outside this range risks timing violation or latch-up. Both rails must ramp monotonically during power-up with no sequencing requirement.
71V67703S80PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67703S80PFGI FAQ
1.How can I place an order for 71V67703S80PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V67703S80PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80PFGI is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80PFGI?
For technical support, including 71V67703S80PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80PFGI requirements.
6.How does Aetrix verify that 71V67703S80PFGI is sourced from the original manufacturer or authorized distributors?
All 71V67703S80PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80PFGI meets industry standards.
7.What is the process for return or replacement of 71V67703S80PFGI?
All 71V67703S80PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80PFGI part is unused and in its original packaging.
Return procedure for 71V67703S80PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80PFGI Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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