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Renesas 71V67703S80PFGI8
- Part No.:
- 71V67703S80PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67703S80PFGI8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,778
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Product details
Overview
71V67703S80PFGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, single-cycle deselect, and industrial temperature support (–40°C to +85°C). It implements burst addressing via ADV/LBO control and supports byte-selectable writes using BW1–BW4 and BWE.
For engineers reviewing the 71V67703S80PFGI8 datasheet, 71V67703S80PFGI8 pinout, 71V67703S80PFGI8 application, or 71V67703S80PFGI8 equivalent, key selection criteria include burst mode timing compliance, TQFP-100 package compatibility, 3.3V I/O voltage tolerance, flow-through read latency, and industrial-grade power-down behavior under ZZ control.
Technical Context
This SRAM uses a synchronous interface with CLK-driven address latching via ADSP/ADSC inputs and supports interleaved or linear burst sequences controlled by the asynchronous LBO pin. The internal burst counter advances on ADV low, enabling four consecutive data words per address cycle without external address incrementing.
Write operations are self-timed and configurable via GW (global write), BWE (byte write enable), and individual BW1–BW4 signals - allowing full 36-bit or selective 9-bit byte writes. Output drivers are unregistered (flow-through), eliminating output register delay but requiring precise timing closure for high-speed reads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via pin strapping |
| Access Time | 8.0 ns maximum at 100 MHz clock; defines minimum clock cycle for guaranteed read data validity |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies enable I/O voltage flexibility |
| Burst Mode | Four-word burst with programmable linear/interleaved order via LBO; no external address sequencing required |
| Power-Down Current | IZZ ≤ 70 mA (industrial grade); activated asynchronously by ZZ high to minimize standby power |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments with full AC/DC spec compliance across range |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); lead-free, RoHS-compliant, green material option available |
Pinout & Package
71V67703S80PFGI8 is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-145, 14 mm × 20 mm body size, 0.5 mm pitch. Pin 1 is marked by corner notch or dot; top-side marking includes "71V67703", speed grade "S80", and package code "PFG".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge when ADSP or ADSC is asserted; A0/A1 define burst sequence start |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) trigger address register load; both active-low, gated by CE |
| ADV | Burst Address Advance | Active-low signal controlling burst counter increment; HIGH suspends burst, holding current address |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10) |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Terminals | 36-bit bidirectional bus; registered input path, flow-through output path (no output register delay) |
| OE | Output Enable | Asynchronous active-low control; enables/disables output drivers independently of clock or chip select state |
| ZZ | Sleep Mode Input | Asynchronous active-high input; gates internal CLK and reduces ICC to ≤70 mA; retains data during sleep |
| CE, CS0, CS1 | Chip Enable/Select | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows multi-chip memory expansion |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, enabling tCD = 8.0 ns read access directly after CLK edge - critical for tight-timing CPU/cache interfaces |
| Single-cycle deselect | Device enters high-Z output state within one clock cycle after chip disable, preventing bus contention in multi-SRAM systems |
| Configurable burst ordering | LBO pin selects linear or interleaved burst sequence without firmware change - matches processor cache line layouts |
| Byte-selectable write capability | Four independent 9-bit write enables (BW1–BW4) allow partial writes without read-modify-write cycles, reducing bus traffic |
| Industrial-grade sleep mode | ZZ-controlled power-down draws ≤70 mA at –40°C to +85°C while guaranteeing data retention - suitable for fanless embedded systems |
Applications
| Network Packet Buffering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: High-speed Ethernet switch ASIC buffers incoming packet headers and metadata before classification. IC Role / Device Role / Timing Role: Synchronous SRAM serving as low-latency, burst-capable first-level packet buffer interfaced directly to MAC logic. Use Value: 8.0 ns tCD and flow-through outputs meet sub-10 ns timing budgets for 100 MHz packet processing pipelines. |
Use Scenario: Real-time data acquisition module in programmable logic controller stores sensor timestamps and analog samples. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing deterministic write response and data retention during brownouts. Use Value: ZZ sleep mode ensures <70 mA power draw at –40°C to +85°C while preserving buffered data during power interruption. |
| Medical Imaging Frame Store | Avionics Display Controller Buffer |
|
Use Scenario: Digital X-ray detector subsystem captures and temporarily stores raw image frames prior to compression and transmission. IC Role / Device Role / Timing Role: Burst-mode SRAM acting as frame line buffer between image sensor interface and FPGA-based preprocessing engine. Use Value: Linear burst (LBO=LOW) delivers sequential pixel data in four-clock bursts matching 16-bit parallel sensor output timing. |
Use Scenario: Cockpit display unit renders synthetic vision graphics using real-time terrain and navigation data streams. IC Role / Device Role / Timing Role: High-reliability SRAM buffering graphics command lists and texture tiles for GPU-like rendering pipeline. Use Value: TQFP-100 package with 0.5 mm pitch meets aerospace PCB layout constraints; industrial temp rating ensures operation at altitude. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18-bit organization only; no 256K × 36-bit mode; 7.5 ns access at 117 MHz; different pinout (165 fBGA) | Requires PCB redesign; suited for space-constrained designs where density > bandwidth is prioritized | Select if migrating to higher-density 18-bit bus and can accommodate fBGA layout and thermal profile |
| AS7C33128P | Asynchronous SRAM (no CLK, ADV, LBO); 15 ns access; 3.3V only; TQFP-100 compatible pinout but functionally distinct | No burst mode or flow-through timing; used in legacy controllers where clock domain isolation is required | Select only for drop-in replacement in non-burst, non-synchronous systems - not functionally equivalent |
Compared with CY7C1373KV18 and AS7C33128P, the 71V67703S80PFGI8 uniquely combines 256K × 36-bit configurability, TQFP-100 compatibility, industrial temperature support, and true flow-through burst timing - making it irreplaceable in high-speed synchronous bus architectures requiring deterministic latency.
Availability
71V67703S80PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data logging, medical imaging frame storage, and avionics display controller buffering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67703S80PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for industrial, automotive, and communications infrastructure.
The 71V67703S80PFGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory interfacing in real-time embedded systems demanding industrial reliability and precise timing control.
FAQ
What is the maximum clock frequency supported by the 71V67703S80PFGI8?
The 71V67703S80PFGI8 supports up to 100 MHz clock frequency with an 8.0 ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) and requires adherence to setup/hold timing margins defined in the AC Electrical Characteristics table. Operation above 100 MHz is not guaranteed and may violate tCD or tSA specifications.
Does the 71V67703S80PFGI8 support both 256K × 36 and 512K × 18 configurations on the same device?
Yes, the 71V67703S80PFGI8 is factory-configured as 256K × 36 but supports 512K × 18 operation via pin strapping - specifically by connecting A18 to VSS (for 256K × 36) or leaving it unconnected/floating (for 512K × 18). The datasheet confirms this dual-configuration capability in the Pin Configuration diagrams for PKG100.
How does the LBO pin affect burst addressing behavior in the 71V67703S80PFGI8?
The LBO pin selects burst order statically: when pulled LOW (to VSS), the 71V67703S80PFGI8 executes linear burst (00→01→10→11); when pulled HIGH (to VDD), it executes interleaved burst (00→01→11→10). LBO must remain stable during operation - changing it mid-burst causes undefined address sequencing and potential data corruption.
Can the 71V67703S80PFGI8 be used in a system with mixed 3.3V and 2.5V I/O domains?
No - the 71V67703S80PFGI8 requires VDDQ = 3.3 V ±5% and is not rated for 2.5V I/O operation. While some AC test conditions list "VDDQ = 3.3V/2.5V", the DC Operating Conditions table explicitly specifies VDDQ min/max as 3.135 V to 3.465 V. Using 2.5V on VDDQ violates absolute maximum ratings and risks functional failure.
What happens to data integrity during ZZ-initiated sleep mode in the 71V67703S80PFGI8?
Data integrity is fully maintained during ZZ-initiated sleep mode in the 71V67703S80PFGI8. The datasheet guarantees data retention under all specified industrial operating conditions (–40°C to +85°C) with ZZ = HIGH, and IZZ ≤ 70 mA. No refresh or external intervention is required - the SRAM cell array remains powered and stable.
71V67703S80PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67703S80PFGI8 FAQ
1.How can I place an order for 71V67703S80PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80PFGI8 reliable?
The price and inventory of 71V67703S80PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V67703S80PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S80PFGI8 transactions.
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4.How is shipping managed for 71V67703S80PFGI8?
71V67703S80PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80PFGI8?
For technical support, including 71V67703S80PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80PFGI8 requirements.
6.How does Aetrix verify that 71V67703S80PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S80PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S80PFGI8?
All 71V67703S80PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80PFGI8 part is unused and in its original packaging.
Return procedure for 71V67703S80PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80PFGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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