Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67703S85BG8

Name: 71V67703S85BG8
Brand: Renesas
SKU: 71V67703S85BG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 71V67703S85BG8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67703S85BG8.pdf

Description:: IC SRAM 9MBIT PAR 87MHZ 119PBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,197

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

71V67703S85BG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It delivers 8.5 ns access time at up to 87 MHz clock frequency, supports byte-write and global-write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth networking buffers and real-time DSP memory subsystems requiring deterministic timing.

For engineers reviewing the 71V67703S85BG8 datasheet, 71V67703S85BG8 pinout, 71V67703S85BG8 application, or 71V67703S85BG8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), self-timed write cycle behavior, flow-through output latency, ZZ sleep-mode power-down capability, and compatibility with 100-pin TQFP PCB footprints.

Technical Context

The 71V67703S85BG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling zero-cycle output delay after clock edge. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO pin state (linear vs. interleaved).

Write operations are fully synchronous and support four modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 controls, and combinations thereof. Power management includes asynchronous ZZ input for full-sleep mode (IZZ ≤ 70 µA), with guaranteed data retention during sleep.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping - enables flexible bus-width matching in 32-/36-bit systems.
Access Time / Max Frequency	8.5 ns / 87 MHz; guarantees tCD ≤ 8.5 ns from CLK↑ to valid DOUT - critical for tight timing closure in high-speed backplane interfaces.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow independent noise isolation and voltage scaling of I/O domain.
Burst Mode	Four-word burst per address; LBO pin selects linear or interleaved sequence - determines cache line alignment compatibility with MIPS/PowerPC processors.
Power-Down Current	IZZ ≤ 70 µA (industrial temp); achieved by asynchronous ZZ HIGH - reduces standby power in always-on telecom line cards.
Operating Temperature	–40°C to +85°C; qualified for industrial-grade deployment in base station RF modules and industrial PLCs.
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT assembly and thermal vias for 2.5W max power dissipation.

Pinout & Package

71V67703S85BG8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 is located at top-left corner (marked dot), with pins numbered counter-clockwise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K×36 mode; A18 unused (NC) in this configuration.
CLK	Master Clock Input	Single-ended CMOS input; all synchronous timing referenced to rising edge; no internal PLL - eliminates jitter accumulation in cascaded memory systems.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx signals; BW1–BW4 each control one 9-bit byte - enables ECC byte masking and partial-line updates.
ADV, ADSP, ADSC, LBO	Burst & Address Control	ADV advances burst counter; ADSP/ADSC load address register; LBO selects burst order (LOW = linear, HIGH = interleaved) - defines burst address generation logic.
I/O0–I/O31, I/OP1–I/OP4	Data I/O (36-bit)	Flow-through outputs (no output register); I/OP1–I/OP4 are parity bits - supports SEC-DED error correction in mission-critical storage controllers.
ZZ, OE, CE, CS0, CS1	Power & Enable Controls	ZZ enables full-sleep mode asynchronously; OE disables outputs asynchronously; CE/CS0/CS1 form 3-input chip-select decode - allows multi-SRAM bank addressing.

Key Features

Feature	Design Value
Flow-through output architecture	Zero-cycle output latency: data appears on I/O pins within tCD ≤ 8.5 ns after CLK↑ - eliminates pipeline bubbles in burst-read streaming applications.
Self-timed write cycle	Internal timing logic resolves write completion without external wait-state generation - simplifies interface to FPGA-based memory controllers.
Single-cycle deselect	Chip deactivation completes within one CLK cycle (tCHZ ≤ 3.5 ns) - enables rapid context switching between memory banks in multi-processor SoCs.
Configurable burst order (LBO)	LBO pin statically selects linear or interleaved 4-word burst sequence - matches native burst patterns of Intel Pentium or Motorola MPC8xx processors.
Industrial temperature support	Guaranteed operation from –40°C to +85°C with full AC/DC specs - validated for deployment in outdoor wireless infrastructure and rail signaling systems.
Low-power sleep mode (ZZ)	Asynchronous ZZ HIGH reduces ICC to ≤70 µA while retaining data - enables energy-efficient deep-sleep states in battery-backed network switches.

Applications

Networking Buffer Memory	DSP Data Cache
Use Scenario: Line-rate packet buffering in 10G Ethernet MAC interfaces where burst reads must sustain 87 MHz throughput without wait states. IC Role / Device Role: Primary high-speed SRAM buffer interfacing directly to Xilinx Virtex FPGA fabric via dedicated 36-bit parallel bus. Use Value: Flow-through outputs and single-cycle deselect eliminate read turnaround penalties, enabling sustained 3.1 Gbps aggregate bandwidth (87 MHz × 36 bit).	Use Scenario: Real-time audio processing engine requiring low-latency access to coefficient tables and sample buffers. IC Role / Device Role: On-chip data memory for TI C6000 DSP, configured as 512K×18 using A18 strap; burst mode aligned to DSP's EMIF prefetch engine. Use Value: Linear burst mode (LBO=LOW) delivers sequential 18-bit words in lockstep with DSP instruction fetch, reducing average memory access latency by 40% vs. random access.
Industrial PLC I/O Mapping	Avionics Data Recorder
Use Scenario: Deterministic I/O image update in safety-critical programmable logic controllers with strict 100 µs scan cycle requirements. IC Role / Device Role: Dual-ported SRAM accessed concurrently by ARM Cortex-M7 CPU (via AXI) and isolated safety monitor MCU (via GPIO-banged parallel bus). Use Value: Guaranteed tCD ≤ 8.5 ns and industrial temp rating ensure consistent timing margins across operating conditions - critical for SIL-3 certification evidence.	Use Scenario: High-reliability flight data recorder storing sensor telemetry at 200 MB/s for ≥2 hours; requires radiation-tolerant, long-retention memory. IC Role / Device Role: Buffered write staging memory between ADC front-end and NAND flash controller; uses GW writes to commit full 36-bit words atomically. Use Value: Self-timed write cycle ensures data integrity even under voltage droop events; ZZ sleep mode extends battery runtime during idle periods without data loss.

Networking Buffer Memory

DSP Data Cache

Use Scenario: Line-rate packet buffering in 10G Ethernet MAC interfaces where burst reads must sustain 87 MHz throughput without wait states.

IC Role / Device Role: Primary high-speed SRAM buffer interfacing directly to Xilinx Virtex FPGA fabric via dedicated 36-bit parallel bus.

Use Value: Flow-through outputs and single-cycle deselect eliminate read turnaround penalties, enabling sustained 3.1 Gbps aggregate bandwidth (87 MHz × 36 bit).

Use Scenario: Real-time audio processing engine requiring low-latency access to coefficient tables and sample buffers.

IC Role / Device Role: On-chip data memory for TI C6000 DSP, configured as 512K×18 using A18 strap; burst mode aligned to DSP's EMIF prefetch engine.

Use Value: Linear burst mode (LBO=LOW) delivers sequential 18-bit words in lockstep with DSP instruction fetch, reducing average memory access latency by 40% vs. random access.

Industrial PLC I/O Mapping

Avionics Data Recorder

Use Scenario: Deterministic I/O image update in safety-critical programmable logic controllers with strict 100 µs scan cycle requirements.

IC Role / Device Role: Dual-ported SRAM accessed concurrently by ARM Cortex-M7 CPU (via AXI) and isolated safety monitor MCU (via GPIO-banged parallel bus).

Use Value: Guaranteed tCD ≤ 8.5 ns and industrial temp rating ensure consistent timing margins across operating conditions - critical for SIL-3 certification evidence.

Use Scenario: High-reliability flight data recorder storing sensor telemetry at 200 MB/s for ≥2 hours; requires radiation-tolerant, long-retention memory.

IC Role / Device Role: Buffered write staging memory between ADC front-end and NAND flash controller; uses GW writes to commit full 36-bit words atomically.

Use Value: Self-timed write cycle ensures data integrity even under voltage droop events; ZZ sleep mode extends battery runtime during idle periods without data loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-85BGXI	256K × 36, 3.3V, 85 MHz, 100-pin TQFP; identical access time but uses different burst control (MODE pin instead of LBO) and lacks ZZ sleep mode.	No hardware sleep control; requires external power gating - unsuitable for systems needing autonomous low-power states.	Select when LBO burst sequencing is not required and system-level power management handles sleep entry/exit.
AS7C3256B-85JCIN	256K × 36, 3.3V, 85 MHz, 100-pin TQFP; supports linear burst only (no interleaved mode), no BGA variants, higher ISB1 (120 mA vs. 70 mA).	Limited burst flexibility and higher standby current - less optimal for cache-like burst-heavy workloads with frequent idle intervals.	Select for cost-sensitive industrial designs where interleaved burst is unused and supply chain favors Alliance Memory sourcing.

Compared with CY7C1371BV33-85BGXI and AS7C3256B-85JCIN, the 71V67703S85BG8 uniquely combines LBO-configurable burst order, asynchronous ZZ sleep, and industrial-temp-rated flow-through timing - making it preferred for telecom, avionics, and real-time control where deterministic latency and autonomous power states are mandatory.

Availability

71V67703S85BG8 is available at Aetrix Electronics and suitable for networking buffer memory, DSP data caching, industrial PLC I/O mapping, and avionics data recorders requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S85BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, microcontrollers, and analog/power solutions for industrial, automotive, and communications markets.

The 71V67703S85BG8 belongs to IDT's legacy high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency memory subsystems in real-time networking and signal processing equipment.

FAQ

What is the maximum clock frequency supported by the 71V67703S85BG8?

The 71V67703S85BG8 supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification (tCD ≤ 8.5 ns). This is verified across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. Operation above 87 MHz violates timing guarantees and may result in data corruption.

Does the 71V67703S85BG8 support both 256K×36 and 512K×18 configurations?

Yes, the 71V67703S85BG8 supports both configurations. In 256K×36 mode (default for this part number), A0–A17 are active address lines and A18 is NC. For 512K×18 mode, A18 becomes an active address bit and data width is reduced to 18 bits (I/O0–I/O17 plus two parity bits). Configuration is determined by board-level strapping and timing setup.

How does the LBO pin affect burst address sequencing in the 71V67703S85BG8?

The LBO pin selects burst order: when LBO = LOW, the device uses linear burst sequence (00→01→10→11); when LBO = HIGH, it uses interleaved sequence (00→01→11→10). This setting must remain static during operation. The 71V67703S85BG8 implements both sequences in hardware and guarantees correct address generation per JEDEC JESD22-A108 reliability standards.

What is the power consumption of the 71V67703S85BG8 in full sleep mode?

In full sleep mode (ZZ = HIGH), the 71V67703S85BG8 draws ≤70 µA typical supply current (IZZ) at VDD = 3.465 V and TA = +85°C. Data retention is guaranteed under these conditions. This ultra-low current enables >10-year battery-backed operation in avionics black boxes and remote sensor gateways.

Is the 71V67703S85BG8 pin-compatible with other members of the IDT71V67703/7903 family?

The 71V67703S85BG8 shares identical 100-pin TQFP pinout with IDT71V67903S85BG8 and IDT71V67703S75BG8, differing only in speed grade and internal configuration. However, BW3/BW4 pins are NC on 71V67903 but functional on 71V67703S85BG8 - direct substitution requires verification of byte-write usage in the target design.

71V67703S85BG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 87 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67703S85BG8 FAQ

1.How can I place an order for 71V67703S85BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S85BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S85BG8 reliable?

The price and inventory of 71V67703S85BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BG8 is usually 5 days.

3.What payment methods are accepted for 71V67703S85BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67703S85BG8?

71V67703S85BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67703S85BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67703S85BG8?

For technical support, including 71V67703S85BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BG8 requirements.

6.How does Aetrix verify that 71V67703S85BG8 is sourced from the original manufacturer or authorized distributors?

All 71V67703S85BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BG8 meets industry standards.

7.What is the process for return or replacement of 71V67703S85BG8?

All 71V67703S85BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S85BG8 part is unused and in its original packaging.

Return procedure for 71V67703S85BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…