Renesas 71V67703S85BGG

Overview

71V67703S85BGG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs and single-cycle deselect. It supports 8.5ns access time at up to 87MHz clock frequency, features burst-mode operation with linear/interleaved address sequencing via LBO pin, and uses self-timed write with global (GW) and byte-level (BW1–BW4) write control. It is used in high-bandwidth packet buffering and cache coherency logic in telecom line cards.

For engineers reviewing the 71V67703S85BGG datasheet, 71V67703S85BGG pinout, 71V67703S85BGG application, or 71V67703S85BGG equivalent, key selection criteria include its 100-pin TQFP package, 3.3V core/I/O supply, industrial temperature range (–40°C to +85°C), flow-through output architecture, and support for burst read/write with programmable linear/interleaved ordering.

Technical Context

The 71V67703S85BGG implements a synchronous, clock-driven interface with registered address and control inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4, OE, LBO, ZZ), all sampled on the rising edge of CLK except asynchronous OE and ZZ. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO state and synchronized to CLK edges.

It employs a flow-through output path-no output register-enabling tCD = 8.5ns clock-to-data delay. Write cycles are self-timed: data is latched on CLK rise, and internal timing completes the write without external wait-state generation. Power management includes active standby (ISB1 = 50mA), clock-running standby (ISB2 = 135mA), and full sleep mode (IZZ = 50mA) activated by ZZ high.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated per IDT document 5309 drw 02a (256K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-85BGXI and AS7C3256A-85JCIN, the 71V67703S85BGG uniquely delivers flow-through outputs (tCD = 8.5ns), dual address status inputs (ADSP/ADSC), and configurable linear/interleaved burst - making it optimal for cache-coherent, high-throughput telecom and networking systems requiring deterministic timing and flexible bus arbitration.

Availability

71V67703S85BGG is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and industrial control applications requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V67703S85BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V67703S85BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for bandwidth-intensive applications in telecom infrastructure, network processors, and real-time embedded systems demanding low-latency, burst-capable memory.

FAQ

What is the maximum operating frequency supported by the 71V67703S85BGG?

The 71V67703S85BGG supports up to 87MHz clock frequency, corresponding to an 8.5ns access time (tCD). This is specified under commercial and industrial temperature ranges with VDD and VDDQ at 3.3V ±5%. The device achieves this performance using a flow-through output architecture and registered synchronous inputs, ensuring reliable timing at full speed without external wait states.

Does the 71V67703S85BGG support both linear and interleaved burst modes?

Yes, the 71V67703S85BGG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the burst follows linear order (00→01→10→11); when HIGH, it follows interleaved order (00→01→11→10). This selection is static and must remain stable during operation, as confirmed in the Interleaved and Linear Burst Sequence Tables (IDT doc 5309 tbl 14–15).

How does the self-timed write function work in the 71V67703S85BGG?

The 71V67703S85BGG implements a self-timed write cycle: once write inputs (GW/BWE/BWx) and data are sampled on the rising CLK edge, internal logic autonomously completes the write without requiring external timing signals or wait states. This is enabled by on-chip timing control and eliminates the need for write-ready handshaking - simplifying controller design while maintaining deterministic tCYC compliance.

What is the role of the ADSP and ADSC pins on the 71V67703S85BGG?

ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous, active-low inputs that trigger loading of the internal address register. ADSP is gated by CE and used for CPU-initiated accesses; ADSC operates independently and supports cache coherency protocols. Both allow the 71V67703S85BGG to interface directly with dual-bus architectures common in high-performance networking SoCs.

Is the 71V67703S85BGG available in industrial temperature grade?

Yes, the 71V67703S85BGG is qualified for industrial temperature operation from –40°C to +85°C. This is explicitly stated in the Recommended Operating Conditions table (IDT doc 5309 tbl 04) and confirmed across AC/DC electrical specifications. The part suffix "S85BGG" denotes the 85MHz speed grade in industrial-grade 100-pin TQFP packaging.