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Renesas 71V67703S85BGG8
- Part No.:
- 71V67703S85BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S85BGG8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,150
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Product details
Overview
71V67703S85BGG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It delivers 8.5 ns access time at up to 87 MHz clock frequency, supports byte-write and global-write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and real-time DSP data caching.
For engineers reviewing the 71V67703S85BGG8 datasheet, 71V67703S85BGG8 pinout, 71V67703S85BGG8 application, or 71V67703S85BGG8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), self-timed write timing, ZZ sleep-mode current (≤70 mA), flow-through output latency, and TQFP/BGA package compatibility for memory subsystem layout.
Technical Context
The 71V67703S85BGG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling zero-cycle output delay after clock edge. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO pin (linear vs. interleaved).
Burst operation delivers four consecutive 36-bit words per address cycle, with first-word tCD = 8.5 ns and subsequent words aligned to rising CLK edges. Write cycles are self-timed and support global (GW) or byte-level (BW1–BW4 + BWE) control, with asynchronous OE and ZZ enabling fast output disable and deep sleep entry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via address mapping |
| Access Time / Max Clock | 8.5 ns access time; supports up to 87 MHz system clock |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) |
| Operating Temperature | Industrial grade: –40°C to +85°C |
| Power Consumption | ISB2 = 135–155 mA (clock-running standby); IZZ = 50–70 mA (full sleep) |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence |
| Output Architecture | Flow-through (no output register); tCLZ = 0 ns, tCHZ = 3.5 ns |
Pinout & Package
Packaged in JEDEC-standard 119-ball fine-pitch BGA (BGG119), footprint 12 mm × 12 mm, 0.8 mm ball pitch. Pinout validated per Renesas document 5309 drw 02d (256K×36 BG119 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs timed to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) overrides byte enables; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV advances burst counter; ADSP/ADSC load address register; LBO configures burst order (static, must not toggle during operation) |
| OE, ZZ | Output & Power Control | OE (asynchronous) disables outputs to high-Z; ZZ (asynchronous) gates CLK and reduces ICC to ≤70 mA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; input path registered, output path flow-through |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = tCLZ = 0 ns setup to valid data, enabling tight timing closure in high-frequency bus interfaces |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation; simplifies controller design for burst writes |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle-critical for interleaved memory access in multi-port systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences match cache line or DMA engine addressing patterns |
| Low-power sleep mode (ZZ) | Reduces ICC to ≤70 mA while retaining data; enables dynamic power gating in battery-backed or thermally constrained systems |
Applications
| Network Packet Buffering | DSP Data Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfaced to MAC controllers and packet processors. Use Value: 8.5 ns tCD and flow-through outputs enable sub-10 ns read turnaround, supporting 10 Gbps+ line-rate buffering without pipeline stalls. | Use Scenario: Holding intermediate FFT or FIR filter coefficients and sample data in real-time audio/video processing. IC Role / Device Role / Timing Role: On-chip scratchpad memory co-located with DSP core for deterministic, zero-wait-state data access. Use Value: Burst mode delivers four 36-bit words per address cycle-matching typical 128-bit wide DSP data paths and reducing address bus overhead by 75%. |
| Industrial PLC I/O Mapping | Radar Signal Processing FIFO |
Use Scenario: Buffering sensor input/output states and control logic variables in deterministic real-time control loops. IC Role / Device Role / Timing Role: Deterministic-access memory for cyclic I/O image updates synchronized to PLC scan cycle clock. Use Value: Single-cycle deselect and guaranteed –40°C to +85°C operation ensure predictable timing under thermal stress and voltage variation in factory environments. | Use Scenario: Capturing high-speed ADC samples from phased-array radar receivers before FFT computation. IC Role / Device Role / Timing Role: First-in-first-out (FIFO) buffer with burst-read capability feeding baseband processing pipelines. Use Value: 87 MHz clock support and 9Mbit density allow >300 MB/s sustained read throughput-sufficient for multi-channel 12-bit, 100 MSPS ADC streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BGXI | 256K × 36, 3.3V, 85 MHz max, 119-ball BGA-but uses different burst control (MODE pin vs. LBO) and lacks ADSP/ADSC cache interface pins | Suitable for generic burst-buffer designs; not drop-in for cache-coherent or legacy IDT-based systems requiring ADSP/ADSC handshake | Select when migrating from IDT platform and ADSP/ADSC signals are unused; verify burst sequence alignment in firmware |
| AS7C3256A-85BIN | 256K × 36, 3.3V, 85 MHz, 100-pin TQFP-no BGA option, no LBO pin, fixed linear burst only, higher ISB2 (180 mA) | Preferred for cost-sensitive, space-constrained PCBs where BGA assembly is unavailable and burst-order flexibility is unnecessary | Choose for TQFP-only production lines or where thermal budget allows higher standby current; no LBO reconfiguration possible |
Compared with CY7C1371BV33-85BGXI and AS7C3256A-85BIN, the 71V67703S85BGG8 uniquely combines LBO-configurable burst order, ADSP/ADSC cache-status signaling, and industrial-grade 119-ball BGA packaging-making it optimal for upgrade paths in existing IDT-based infrastructure and high-reliability embedded systems.
Availability
71V67703S85BGG8 is available at Aetrix Electronics and suitable for network packet buffering, DSP data caching, industrial PLC I/O mapping, and radar signal processing FIFOs requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S85BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.
The 71V67703S85BGG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic, low-latency memory subsystems in networking, telecommunications, and real-time embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V67703S85BGG8?
The 71V67703S85BGG8 supports up to 87 MHz clock frequency, corresponding to an 8.5 ns access time (tCD). This is specified under industrial temperature conditions (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The device meets all AC timing parameters-including tCYC ≥11.5 ns and tCH/tCL ≥4.5 ns-at this speed grade.
Does the 71V67703S85BGG8 support both linear and interleaved burst modes?
Yes, the 71V67703S85BGG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear burst order is selected; when LBO = HIGH, interleaved burst order is selected. LBO is a static DC input and must remain stable during device operation to prevent burst counter corruption.
What is the function of the ADSP and ADSC pins on the 71V67703S85BGG8?
The ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) pins on the 71V67703S85BGG8 are synchronous inputs that trigger loading of the internal address register on the rising edge of CLK. ADSP is gated by CE and used for processor-initiated accesses; ADSC is independent of CE and supports cache-coherent memory transactions in multiprocessor or cached SoC environments.
How does the ZZ pin affect power consumption in the 71V67703S85BGG8?
When ZZ is driven HIGH on the 71V67703S85BGG8, the device enters full sleep mode: the internal clock is gated, and supply current drops to IZZ ≤70 mA (industrial grade). Data retention is guaranteed during sleep. ZZ is asynchronous, requires no setup/hold relative to CLK, and recovery time (tZZR) is 100 ns minimum after ZZ returns LOW.
Is the 71V67703S85BGG8 pin-compatible with other members of the IDT71V67xxx family?
The 71V67703S85BGG8 shares identical 119-ball BGA pinout (BGG119) with the 71V67903 variant in 512K×18 configuration, but differs in address pin usage (A18 active in 71V67903, NC in 71V67703) and BW3/BW4 functionality (present in 71V67703, not applicable in 71V67903). Direct substitution requires verification of address mapping and byte-enable signal routing.
71V67703S85BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S85BGG8 FAQ
1.How can I place an order for 71V67703S85BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BGG8 reliable?
The price and inventory of 71V67703S85BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BGG8 is usually 5 days.
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Once your 71V67703S85BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BGG8?
For technical support, including 71V67703S85BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BGG8 requirements.
6.How does Aetrix verify that 71V67703S85BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BGG8 meets industry standards.
7.What is the process for return or replacement of 71V67703S85BGG8?
All 71V67703S85BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BGG8 part is unused and in its original packaging.
Return procedure for 71V67703S85BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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