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Renesas 71V67703S85BGGI
- Part No.:
- 71V67703S85BGGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S85BGGI.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V67703S85BGGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 8.5 ns access time at 87 MHz, single-cycle deselect, and burst-mode operation enabled by ADV/LBO control. It supports byte-selectable writes via BW1–BW4 and global write via GW, and operates across industrial temperature (–40°C to +85°C) in a 119-ball BGA (BGG) package.
For engineers reviewing the 71V67703S85BGGI datasheet, 71V67703S85BGGI pinout, 71V67703S85BGGI application, or 71V67703S85BGGI equivalent, key selection criteria include burst address sequencing (linear vs. interleaved), self-timed write timing under CE/ADV synchronization, ZZ-controlled sleep mode current (≤70 mA), and compatibility with 3.3V I/O systems requiring deterministic read latency and low-power standby.
Technical Context
The 71V67703S85BGGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling predictable tCD = 8.5 ns output delay from CLK rising edge. Its internal burst counter advances on ADV LOW and selects sequence order via LBO (LOW = linear, HIGH = interleaved), supporting four-word bursts per address.
Write operations are fully synchronous and support multiple modes: global write (GW active), byte-write (BWE + BWx), or mixed granularity. Power management includes asynchronous ZZ input for full-sleep mode (IZZ ≤ 70 mA), and separate VDD (3.3 V core) and VDDQ (3.3 V I/O) supplies for noise isolation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); enables high-bandwidth data buffering in 36-bit bus systems like network packet processors. |
| Access Time / Max Frequency | 8.5 ns / 87 MHz; guarantees deterministic read latency for real-time burst transfers without wait states. |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; dual-rail design isolates core logic noise from I/O signaling. |
| Burst Mode | Linear or interleaved 4-word burst controlled by LBO pin; eliminates external address generation logic in cache or FIFO interfaces. |
| Power-Down Current | IZZ ≤ 70 mA (industrial temp); reduces system power during idle cycles without losing data retention. |
| Operating Temperature | –40°C to +85°C; qualified for industrial embedded applications including base station control and motor drives. |
| Package | 119-ball fine-pitch BGA (BGG119); JEDEC-compliant footprint with 0.8 mm pitch for high-density PCB layouts. |
Pinout & Package
71V67703S85BGGI is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), 12 mm × 12 mm body, 0.8 mm pitch, with thermal pad exposed on bottom. Pin functions are defined per the BG119/BGG119 configuration for 256K × 36 organization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is asserted with CE. |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; defines tCYC = 11.5 ns minimum. |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) trigger address register load; both active LOW and gated by CE. |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst sequence for partial transfers. |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10). |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte-write mode; BW1–BW4 select individual 9-bit bytes (I/O0–7/IOP1, etc.). |
| OE | Output Enable | Asynchronous control: LOW enables flow-through outputs; HIGH forces high-Z regardless of clock or chip enable state. |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces supply current to ≤70 mA while retaining memory contents. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; inputs registered on CLK rising edge; outputs flow-through (no register delay). |
| VDD / VDDQ / VSS | Power & Ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; VSS = common ground; decoupling required per ball location. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-Through Output Architecture | Eliminates output register delay, delivering valid data within 8.5 ns of CLK rising edge-critical for zero-wait-state burst reads. |
| Single-Cycle Deselect | Chip deactivation completes in one clock cycle, enabling rapid context switching between memory banks or peripherals. |
| Self-Timed Write Cycle | Internal timing logic resolves write completion without external strobes-simplifies timing closure for GW- or BWx-initiated writes. |
| Configurable Burst Sequencing | LBO pin selects linear or interleaved 4-word burst order, matching processor/cache address increment patterns without firmware overhead. |
| Independent Core & I/O Supplies | VDD and VDDQ separation minimizes switching noise coupling from I/O drivers into sensitive core logic, improving signal integrity. |
Applications
| Network Packet Buffering | Industrial PLC Data Logging |
|---|---|
Use Scenario: Storing incoming Ethernet frames in a line-rate switch ASIC before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with burst-read capability to feed parallel processing pipelines. Use Value: 8.5 ns tCD and flow-through outputs enable deterministic frame retrieval at 87 MHz, eliminating pipeline stalls during back-to-back packet bursts. | Use Scenario: Capturing sensor timestamps and analog readings in a programmable logic controller during cyclic scan execution. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for real-time task data exchange between CPU and I/O modules. Use Value: Single-cycle deselect and industrial temperature rating ensure reliable operation during rapid I/O polling cycles across –40°C to +85°C ambient. |
| Baseband Signal Processing | Automotive ADAS Preprocessing |
Use Scenario: Holding FFT coefficients and filter taps in a 5G NR baseband processor's front-end digital section. IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly with DSP cores requiring burst-aligned coefficient access. Use Value: Linear/interleaved burst modes align with DSP memory access patterns, reducing external address generation logic and PCB routing complexity. | Use Scenario: Buffering raw camera and radar point-cloud data prior to fusion in an autonomous driving domain controller. IC Role / Device Role / Timing Role: Low-power, high-reliability memory for safety-critical preprocessing pipelines with strict thermal constraints. Use Value: ZZ sleep mode (≤70 mA) enables dynamic power gating during sensor idle periods while preserving buffered data integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-85BZXI | 256K × 32-bit (8Mbit), 85 MHz max, 119-ball BGA, but uses QDR-II+ interface with separate read/write clocks. | Requires dual-clock domain design and lacks LBO-configurable burst order; better suited for high-throughput streaming than burst-addressed control logic. | Select only if system already uses QDR-II+ infrastructure and requires higher sustained bandwidth over burst predictability. |
| IS61WV25632ALL-85BLI | 256K × 32-bit (8Mbit), 85 MHz, 119-ball BGA, asynchronous OE but no burst mode or ADV/LBO controls. | No burst addressing or flow-through optimization; relies on external logic for multi-word transfers; simpler timing but lower peak efficiency. | Prefer for cost-sensitive industrial controllers where deterministic burst latency is not required and legacy address sequencing exists. |
Compared with CY7C1371DV33-85BZXI and IS61WV25632ALL-85BLI, the 71V67703S85BGGI uniquely delivers synchronized burst addressing with configurable linear/interleaved order, flow-through output timing, and integrated sleep control-making it optimal for real-time embedded systems needing predictable latency and low-power idle states.
Availability
71V67703S85BGGI is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data logging, baseband signal processing, and automotive ADAS preprocessing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67703S85BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for industrial, automotive, and communications markets.
The 71V67703S85BGGI belongs to IDT's high-performance synchronous SRAM product line, designed specifically for real-time embedded systems demanding deterministic burst access, low-latency flow-through outputs, and robust industrial temperature operation.
FAQ
What is the maximum operating frequency supported by the 71V67703S85BGGI?
The 71V67703S85BGGI supports up to 87 MHz operation, corresponding to its 8.5 ns access time (tCD). This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The device achieves this performance using a flow-through output architecture that eliminates output register delay, ensuring data validity precisely 8.5 ns after each CLK rising edge.
How does the LBO pin affect burst addressing behavior in the 71V67703S85BGGI?
The LBO pin on the 71V67703S85BGGI statically configures the internal burst counter's address sequence: when pulled LOW, it selects linear burst order (00→01→10→11); when pulled HIGH, it selects interleaved order (00→01→11→10). This setting must remain stable during operation and is sampled asynchronously, allowing hardware-level optimization for specific processor or cache address increment patterns without firmware intervention.
Can the 71V67703S85BGGI operate with different voltage levels on VDD and VDDQ?
No-the 71V67703S85BGGI requires both VDD (core) and VDDQ (I/O) to be supplied at 3.3 V ±5% simultaneously. The datasheet specifies identical voltage tolerances and absolute maximum ratings for both rails, and operation outside this matched range risks timing violations, data corruption, or latch-up. Decoupling capacitors must be placed near respective VDD and VDDQ balls to maintain noise isolation.
What is the purpose of the ZZ pin on the 71V67703S85BGGI, and how does it impact power consumption?
The ZZ pin on the 71V67703S85BGGI enables full-sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤70 mA (industrial grade) while retaining all stored data. This mode is asynchronous and immediate, making it ideal for dynamic power management in battery-backed or thermally constrained systems where memory state must persist during idle intervals without active refresh.
Does the 71V67703S85BGGI support byte-level write control, and how is it implemented?
Yes-the 71V67703S85BGGI supports granular byte writes via four dedicated inputs: BW1–BW4. Each enables one 9-bit byte (e.g., BW1 → I/O0–I/O7 + I/OP1). These operate only when BWE is LOW; if BWE is HIGH, only GW can initiate a write. This architecture allows partial-word updates without disturbing adjacent data, essential for protocol stack buffers and descriptor tables in networking and control applications.
71V67703S85BGGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S85BGGI FAQ
1.How can I place an order for 71V67703S85BGGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BGGI reliable?
The price and inventory of 71V67703S85BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BGGI is usually 5 days.
3.What payment methods are accepted for 71V67703S85BGGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BGGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67703S85BGGI?
71V67703S85BGGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BGGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BGGI?
For technical support, including 71V67703S85BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BGGI requirements.
6.How does Aetrix verify that 71V67703S85BGGI is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BGGI meets industry standards.
7.What is the process for return or replacement of 71V67703S85BGGI?
All 71V67703S85BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BGGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BGGI part is unused and in its original packaging.
Return procedure for 71V67703S85BGGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BGGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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