Renesas 71V67703S85BGGI8

Overview

71V67703S85BGGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and features self-timed write with global and byte-level write control. It is used in high-bandwidth packet buffering and cache coherency logic in telecom line cards.

For engineers reviewing the 71V67703S85BGGI8 datasheet, 71V67703S85BGGI8 pinout, 71V67703S85BGGI8 application, or 71V67703S85BGGI8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), ZZ sleep mode entry timing (tZZPW ≥ 100 ns), flow-through output latency (tCD ≤ 8.5 ns), and 119-ball BGA (BGG) package compatibility with JEDEC MO-207AD.

Technical Context

This SRAM implements a synchronous, clock-driven interface with registered address, control, and data inputs, but unregistered (flow-through) outputs-enabling deterministic tCD timing without output register delay. Burst operation is initiated by ADSP/ADSC low and ADV low, with internal binary counter generating four sequential addresses per burst.

The device supports two memory configurations: 256K × 36 (address range A0–A17) and 512K × 18 (A0–A18), selected by package and internal decoding. Pin-compatible variants like 71V67903 differ in address width and BW3/BW4 availability; 71V67703S85BGGI8 explicitly supports all four byte-write enables (BW1–BW4) and full 36-bit I/O width.

Key Specifications

Pinout & Package

71V67703S85BGGI8 is packaged in a 119-ball fine-pitch BGA (BGG119), compliant with JEDEC MO-207AD. Ball pitch is 0.8 mm; body size is 12 mm × 12 mm. Thermal pad is not present; mechanical mounting relies on perimeter solder joints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372DV33-85BZXI and AS7C3256P-85JCIN, the 71V67703S85BGGI8 uniquely combines flow-through output latency, hardware-selectable burst order, and ZZ-controlled sleep-making it optimal for latency-critical, thermally demanding, and power-aware embedded systems.

Availability

71V67703S85BGGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and industrial-temperature performance.

Supply support for 71V67703S85BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V67703S85BGGI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable data buffering in network processors, baseband units, and real-time control systems.

FAQ

What is the maximum operating frequency supported by the 71V67703S85BGGI8?

The 71V67703S85BGGI8 supports up to 87 MHz clock frequency, corresponding to an 8.5 ns access time (tCD). This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply voltage. The device achieves this using a flow-through output architecture that eliminates output register delay, making it suitable for systems requiring deterministic, sub-9 ns read latency.

Does the 71V67703S85BGGI8 support both linear and interleaved burst modes?

Yes, the 71V67703S85BGGI8 supports both linear and interleaved 4-word burst sequences, selected by the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the burst follows linear order (00→01→10→11); when LBO = HIGH, it follows interleaved order (00→01→11→10). This hardware-selectable feature allows optimization for different memory access patterns without firmware changes or external logic.

How does the ZZ pin function in the 71V67703S85BGGI8?

The ZZ pin on the 71V67703S85BGGI8 is an asynchronous, high-active sleep mode input. When asserted (ZZ = HIGH), it gates the internal clock and reduces supply current to IZZ ≤ 70 mA (industrial grade), while retaining data in memory. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before the next valid access. This enables dynamic power management in burst-idle systems like packet processors.

What is the role of the BW1–BW4 pins on the 71V67703S85BGGI8?

The BW1–BW4 pins on the 71V67703S85BGGI8 are individual byte write enables, each controlling one 9-bit segment of the 36-bit data bus: BW1 → I/O0–7 & I/OP1, BW2 → I/O8–15 & I/OP2, BW3 → I/O16–23 & I/OP3, BW4 → I/O24–31 & I/OP4. When activated (LOW) with BWE = LOW, they permit selective writing of specific bytes without affecting others-essential for cache line updates and partial register writes.

Is the 71V67703S85BGGI8 pin-compatible with other members of the 71V67703/71V67903 family?

The 71V67703S85BGGI8 is pin-compatible with other 119-ball BGA variants in the same family (e.g., 71V67703S75BGGI8, 71V67703S80BGGI8) sharing the BGG119 footprint and signal mapping. However, it is not pin-compatible with 71V67903 variants, which implement 512K × 18 organization and omit BW3/BW4 pins. Always verify address width (A0–A17 vs. A0–A18) and byte-enable pin presence before substitution.