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Renesas 71V67703S85BQ8
- Part No.:
- 71V67703S85BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQ8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,030
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Product details
Overview
71V67703S85BQ8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It delivers 8.5 ns access time at up to 87 MHz clock frequency, supports byte-write and global-write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and real-time DSP data caching.
For engineers reviewing the 71V67703S85BQ8 datasheet, 71V67703S85BQ8 pinout, 71V67703S85BQ8 application, or 71V67703S85BQ8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), self-timed write timing, ZZ sleep-mode current (≤70 mA), and TQFP-100 package compatibility with JEDEC-standard PCB footprints.
Technical Context
The 71V67703S85BQ8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO pin - linear when LBO=LOW, interleaved when LBO=HIGH.
Write operations are self-timed and support four modes: global write (GW), byte write enable (BWE), individual byte writes (BW1–BW4), and asynchronous OE-controlled output disable. Power management includes ZZ-triggered deep-sleep mode with guaranteed data retention and ISB2 standby current ≤155 mA at 87 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping on PKG100 |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency for full burst throughput |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); independent rail design enables noise isolation |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence; ADV controls advance |
| Power-Down Current | IZZ ≤ 70 mA in full sleep mode (ZZ HIGH); ISB1 ≤ 70 mA in CMOS standby (device deselected) |
| Operating Temperature | Industrial grade: –40°C to +85°C; validated across full voltage and timing margins |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch |
Pinout & Package
71V67703S85BQ8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm, 0.5 mm lead pitch, with exposed thermal pad (not electrically connected). Pinout matches the 256K × 36 configuration: A0–A18 address inputs, I/O0–I/O31 + I/OP1–I/OP4 data I/Os, and dedicated control pins including ADSP, ADSC, ADV, BWE, GW, CS0/CS1, CE, OE, LBO, and ZZ.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; defines 256K-word space |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit bus) | Flow-through outputs (no register); input path registered; supports byte-wise read/write masking |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; both active LOW, synchronous |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Burst Order Selection | Asynchronous static input: LOW = linear burst (00→01→10→11); HIGH = interleaved (00→01→11→10) |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode; gates internal CLK; reduces supply current to ≤70 mA |
| OE | Output Enable | Asynchronous LOW enables output drivers; HIGH forces I/O pins to high-impedance state |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.5 ns max, enabling deterministic read-to-data timing |
| Single-cycle deselect | Device transitions to high-Z output within one CLK cycle after CE/CS deassertion - critical for bus arbitration |
| Self-timed write cycle | Internal timing logic eliminates external write-pulse generation; supports GW, BWE, and BWx concurrently |
| Configurable burst addressing | LBO pin selects linear or interleaved 4-word burst order without firmware overhead or external logic |
| Low-power sleep mode | ZZ HIGH reduces IDD to ≤70 mA while retaining full memory content - ideal for power-gated subsystems |
Applications
| High-Speed Network Packet Buffer | DSP Data Cache Interface |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Synchronous SRAM buffer between MAC and switch fabric; handles 87 MHz burst reads/writes with single-cycle deselect for low-latency packet steering. Use Value: 8.5 ns tCD and flow-through outputs ensure sub-10 ns read turnaround; burst mode delivers 4× data per address, reducing bus cycles by 75% vs. non-burst RAM. | Use Scenario: Providing low-latency scratchpad memory for TI C6000 or Analog Devices SHARC processors during FFT or FIR filter execution. IC Role / Device Role / Timing Role: External data cache SRAM interfaced directly to DSP EMIF; uses ADV/LBO to match processor burst request patterns. Use Value: Linear burst mode (LBO=LOW) aligns with sequential DSP memory accesses; tCLZ = 0 ns ensures immediate output activation after clock edge. |
| Industrial PLC Real-Time I/O Buffer | Radar Signal Processing FIFO |
Use Scenario: Temporarily staging sensor input and actuator output data in deterministic cyclic executive loops. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/CS partitioning) buffering analog/digital I/O streams synchronized to 10–50 kHz control cycles. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode support unattended operation; ISB2 ≤155 mA enables low-power idle states. | Use Scenario: Capturing ADC samples from phased-array radar front-ends prior to beamforming computation. IC Role / Device Role / Timing Role: High-bandwidth circular buffer feeding FPGA-based digital downconverters; uses interleaved burst (LBO=HIGH) to match ping-pong DMA patterns. Use Value: 36-bit bus width matches 12-bit I/Q × 3 channel ADC output; tCHZ = 3.5 ns guarantees clean bus release between bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-85BZXI | 256K × 36, 3.3V, 85 MHz, 8.5 ns; same TQFP-100 package but Cypress (Infineon) silicon; no ADSC pin, uses different burst control (MODE pin instead of LBO) | Requires redesign of burst-order logic and address-status interface; lacks ADSC cache-controller support | Choose only if ADSC is unused and MODE pin routing is available; verify tCD/tCLZ timing against system clock skew. |
| AS7C3256A-85TIN | 256K × 36, 3.3V, 85 MHz, 8.5 ns; TQFP-100; no burst mode, no LBO/ADV/ADSC; simplified control (CE/OE/GW only) | Supports basic read/write only - no burst, no cache-controller handshake, no sleep mode (ZZ) | Select when burst functionality is unnecessary and lowest BOM cost is prioritized; requires external logic for multi-word transfers. |
Compared with CY7C1371DV33-85BZXI and AS7C3256A-85TIN, the 71V67703S85BQ8 uniquely integrates cache-controller interface (ADSC), programmable burst order (LBO), and hardware sleep (ZZ) - making it optimal for systems requiring deterministic low-latency burst access and power-aware operation.
Availability
71V67703S85BQ8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, DSP data caches, industrial PLC I/O staging, and radar signal processing FIFOs requiring stable component supply across extended temperature and long production lifecycles.
Supply support for 71V67703S85BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance memory and timing solutions for communications, computing, and industrial applications.
The 71V67703S85BQ8 belongs to IDT's 71V67703/71V67903 family of 3.3V synchronous SRAMs engineered for systems demanding burst-mode bandwidth, flow-through latency, and industrial-grade reliability.
FAQ
What is the maximum clock frequency supported by the 71V67703S85BQ8?
The 71V67703S85BQ8 supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device maintains timing compliance under worst-case voltage and temperature corners, with tCYC = 11.5 ns minimum.
Does the 71V67703S85BQ8 support both linear and interleaved burst modes?
Yes, the 71V67703S85BQ8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when LBO is HIGH, it executes interleaved burst (00→01→11→10). LBO is asynchronous and must remain static during operation.
How does the ZZ pin function in the 71V67703S85BQ8?
The ZZ pin on the 71V67703S85BQ8 is an asynchronous sleep-mode enable. When ZZ is driven HIGH, the internal clock is gated and the device enters full sleep mode with supply current reduced to ≤70 mA (industrial grade), while guaranteeing data retention. ZZ is internally pulled to VSS if left unconnected.
What is the role of the ADSP and ADSC pins on the 71V67703S85BQ8?
ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous, active-LOW inputs that load the internal address register on the rising edge of CLK. ADSP is gated by CE; ADSC is independent. They enable dual-source address loading - essential for cache-coherent systems and high-performance CPU/SOC interfaces.
Can the 71V67703S85BQ8 operate in 512K × 18 configuration?
Yes, the 71V67703S85BQ8 supports 512K × 18 organization via pin-strapping on the same TQFP-100 package. In this mode, A18 becomes functional (vs. NC in 256K × 36 mode), and BW3/BW4 are not used. The memory array reconfigures internally; no external logic is required beyond correct address mapping and control signal routing.
71V67703S85BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQ8 FAQ
1.How can I place an order for 71V67703S85BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQ8 reliable?
The price and inventory of 71V67703S85BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQ8 is usually 5 days.
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Once your 71V67703S85BQ8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQ8?
For technical support, including 71V67703S85BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQ8 requirements.
6.How does Aetrix verify that 71V67703S85BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQ8 meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQ8?
All 71V67703S85BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQ8 part is unused and in its original packaging.
Return procedure for 71V67703S85BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQ8 Tags
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M24C02-WMN6TP
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