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Renesas 71V67703S85BQG
- Part No.:
- 71V67703S85BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQG.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,437
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Product details
Overview
71V67703S85BQG from IDT (now Renesas) is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature (–40°C to +85°C), and features self-timed write with global/byte write control - used in high-bandwidth packet buffering and cache subsystems of networking ASICs.
For engineers reviewing the 71V67703S85BQG datasheet, 71V67703S85BQG pinout, 71V67703S85BQG application, or 71V67703S85BQG equivalent, key selection criteria include burst address sequencing (LBO-controlled), flow-through output timing (tCD = 8.5 ns), ZZ sleep mode current (IZZ = 50–70 mA), and JEDEC-standard 100-pin TQFP packaging with VDD/VDDQ separation.
Technical Context
This SRAM implements a synchronous, clock-driven interface with registered address and data inputs, yet unregistered (flow-through) outputs - enabling deterministic tCD timing without output register latency. Its internal burst counter advances on ADV assertion and selects sequence order via LBO pin state (linear vs. interleaved), supporting four-word bursts per address.
The device integrates independent write control logic: GW enables full 36-bit writes, while BWE and BW1–BW4 support byte-selectable writes (9-bit granularity). Power management includes asynchronous ZZ sleep mode (IZZ ≤ 70 mA) and synchronous standby modes (ISB1 = 50–70 mA), all compliant with 3.3V ±5% core and I/O supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9,175,040 bits); supports 512K × 18-bit via pin-compatible variant |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency (tCYC = 11.5 ns) |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change |
| Write Architecture | Self-timed write with global (GW) or byte-level (BW1–BW4) enable; no external write pulse required |
| Output Architecture | Flow-through (unregistered) outputs ensure tCD = 8.5 ns from CLK↑, eliminating output register delay |
| Temperature Range | Industrial grade: –40°C to +85°C; validated for sustained operation under thermal stress |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout matches PKG100 configuration for 256K × 36 organization (per IDT doc 5309 drw 02a).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP/ADSC active; A0–A17 used for 256K×36 addressing |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1 controls I/O0–I/O7+I/OP1 (9-bit byte) |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; both active-low, synchronous |
| ADV | Burst Address Advance | Active-low signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode (IZZ ≤ 70 mA); CLK gated internally, data retained |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Synchronous input path (registered), flow-through output path (no register); 9-bit byte groups mapped to BWx |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.5 ns guaranteed, enabling tight timing closure in high-speed bus interfaces |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle - critical for multiplexed bus arbitration and low-latency context switching |
| Configurable burst sequencing | LBO pin selects linear or interleaved 4-word burst order, matching processor/cache burst patterns without firmware overhead |
| Independent VDD/VDDQ supplies | Separate 3.3V core and I/O rails suppress supply noise coupling between logic and data paths, improving signal integrity |
| Byte-selectable write capability | BW1–BW4 enable 9-bit granular writes (e.g., partial cache line updates), reducing unnecessary memory traffic and power |
Applications
| Network Packet Buffering | High-Speed Cache Interface |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or SONET frames in telecom line cards before classification or forwarding. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly to MAC or switch fabric controller with burst-aligned reads/writes. Use Value: 8.5 ns tCD and flow-through outputs meet sub-10 ns timing budgets for 87 MHz bus clocks; single-cycle deselect prevents bus contention during dynamic buffer allocation. |
Use Scenario: Serving as Level 2 (L2) cache tag/data RAM in embedded network processors or baseband SoCs. IC Role / Device Role / Timing Role: Synchronous cache RAM with burst read/write aligned to CPU/cache controller address status signals (ADSP/ADSC). Use Value: Linear burst mode (LBO = LOW) matches sequential cache line fetch; byte-write enables partial line updates without full-line overwrite. |
| Telecom Control Plane Memory | Industrial Real-Time Data Logging |
Use Scenario: Holding configuration tables, routing entries, and session state in carrier-grade routers and firewalls. IC Role / Device Role / Timing Role: High-reliability, industrial-temp SRAM storing critical control plane data accessed via dedicated bus. Use Value: ZZ sleep mode (IZZ ≤ 70 mA) enables low-power state retention during idle periods; –40°C to +85°C rating ensures field reliability. |
Use Scenario: Capturing sensor streams or motion control feedback in programmable logic controllers (PLCs) and CNC systems. IC Role / Device Role / Timing Role: Burst-capable buffer between ADC/DAC peripherals and real-time processor, synchronized to system clock. Use Value: Self-timed write eliminates external write strobe generation; ADV-controlled burst suspension allows deterministic data capture window alignment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18-bit (same density), 2.5V core, 3.3V I/O; no LBO pin; fixed linear burst only | Lacks interleaved burst mode and separate VDD/VDDQ; requires 2.5V core supply | Choose for cost-sensitive designs where interleaved burst and dual-supply isolation are not required. |
| AS7C33128PFSIG | 256K × 36-bit, 3.3V-only supply (no VDDQ separation), 10 ns access, commercial temp only (0°C to +70°C) | No industrial temperature option; no ZZ sleep mode; higher tCD (10 ns) limits max clock to ~66 MHz | Choose for non-industrial, lower-frequency applications where supply simplification outweighs timing/power advantages. |
Compared with CY7C1373KV18 and AS7C33128PFSIG, the 71V67703S85BQG delivers superior timing (8.5 ns tCD), industrial temperature support, configurable burst ordering, and true flow-through outputs - making it optimal for high-reliability, high-speed control plane and packet processing roles.
Availability
71V67703S85BQG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and telecom equipment requiring stable component supply, long-term lifecycle support, and verified industrial-temperature performance.
Supply support for 71V67703S85BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.
The 71V67703S85BQG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented data buffering in networking ASICs, packet switches, and real-time control systems.
FAQ
What is the maximum operating frequency supported by the 71V67703S85BQG?
The 71V67703S85BQG supports up to 87 MHz clock frequency, corresponding to an 8.5 ns access time (tCD) and 11.5 ns clock cycle (tCYC). This is validated across the full industrial temperature range (–40°C to +85°C) with 3.3V ±5% supplies. Higher frequencies require faster speed grades (e.g., 71V67703S75BQG for 7.5 ns).
How does the LBO pin affect burst behavior in the 71V67703S85BQG?
The LBO pin on the 71V67703S85BQG statically selects burst order: LOW enables linear burst (00→01→10→11), HIGH enables interleaved burst (00→01→11→10). It must remain stable during operation - changing LBO mid-burst causes undefined behavior. The sequence applies to A0/A1 bits during four-word bursts.
Does the 71V67703S85BQG support byte-write operations, and how are they implemented?
Yes, the 71V67703S85BQG supports 9-bit byte writes via BW1–BW4 inputs, each controlling one 9-bit segment of the 36-bit data bus (e.g., BW1 → I/O0–I/O7 + I/OP1). Byte writes require BWE = LOW and are synchronous to CLK↑. Global write (GW = LOW) overrides all BWx signals.
What is the power consumption of the 71V67703S85BQG in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V67703S85BQG draws IZZ ≤ 70 mA at VDD = 3.465 V and TA = +85°C - the worst-case industrial condition. At VDD = 3.135 V and TA = –40°C, IZZ is typically lower. Sleep mode retains all data and disables internal clocks.
Is the 71V67703S85BQG pin-compatible with other members of the 71V67703/71V67903 family?
The 71V67703S85BQG (256K × 36) shares the same 100-pin TQFP package and pinout with the 71V67703 series but differs from the 71V67903 (512K × 18) in address pin usage and BW3/BW4 functionality - BW3/BW4 are not connected on 71V67903. Direct substitution requires verifying memory map and byte-enable requirements.
71V67703S85BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQG FAQ
1.How can I place an order for 71V67703S85BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQG reliable?
The price and inventory of 71V67703S85BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQG is usually 5 days.
3.What payment methods are accepted for 71V67703S85BQG?
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4.How is shipping managed for 71V67703S85BQG?
71V67703S85BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQG?
For technical support, including 71V67703S85BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQG requirements.
6.How does Aetrix verify that 71V67703S85BQG is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQG meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQG?
All 71V67703S85BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQG part is unused and in its original packaging.
Return procedure for 71V67703S85BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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