My Inquiry
My Account
Renesas 71V67703S85BQG8
- Part No.:
- 71V67703S85BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQG8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,621
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67703S85BQG8 from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.5ns access time at up to 87MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth networking buffers and real-time DSP data caching.
For engineers reviewing the 71V67703S85BQG8 datasheet, 71V67703S85BQG8 pinout, 71V67703S85BQG8 application, or 71V67703S85BQG8 equivalent, key selection criteria include its JEDEC-standard 100-pin TQFP package, 3.3V core/I/O supply compatibility, self-timed write with byte-level control (BW1–BW4), ZZ sleep mode, and flow-through output architecture enabling zero-latency read data delivery on clock edge.
Technical Context
The 71V67703S85BQG8 implements a synchronous, clock-driven interface with registered address, control, and input paths, but unregistered (flow-through) output path - eliminating output register delay. Its internal burst counter advances on ADV=LOW and generates four consecutive addresses based on LBO state (linear or interleaved), delivering four words per burst cycle without external address generation.
Write operations support both global (GW) and byte-selective (BWE + BW1–BW4) modes, with asynchronous OE and ZZ inputs enabling immediate output disable and full sleep entry. The device uses dual power domains: VDD (3.3V core) and VDDQ (3.3V I/O), and supports single-cycle chip deselect via CE/CS0/CS1 timing coordination.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit or 512K × 18-bit - selectable configuration supporting wide-data or deep-address system architectures. |
| Access Time | 8.5ns max - guarantees valid data output within 8.5ns after rising CLK edge, enabling 87MHz sustained burst read throughput. |
| Operating Voltage | 3.3V ±5% for both VDD (core) and VDDQ (I/O) - ensures compatibility with modern 3.3V logic families and eliminates level-shifting requirements. |
| Burst Mode | Four-word burst with programmable linear/interleaved order via LBO pin - reduces address bus traffic and improves cache-line fill efficiency. |
| Power Management | ZZ input enables full sleep mode with ≤70mA ISB2 (clock-running standby) and ≤70mA IZZ (deep sleep) - critical for low-power idle states in telecom line cards. |
| Temperature Range | –40°C to +85°C industrial grade - validated for deployment in base station RF modules and industrial PLC backplanes. |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm - surface-mount compatible with standard reflow profiles and automated optical inspection. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm footprint, with exposed thermal pad (not electrically connected). Pin 1 marked by dot; pin numbering follows standard counter-clockwise convention from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP or ADSC is active LOW - supports 19-bit addressing for 512K×18 mode. |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge - defines tCYC = 11.5ns minimum for 87MHz operation. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx signals; BW1–BW4 each control one 9-bit byte - enables precise partial-word updates without read-modify-write. |
| OE | Asynchronous Output Enable | Directly disables I/O drivers to high-Z independent of CLK - allows dynamic bus sharing and glitch-free multiplexing. |
| ZZ | Asynchronous Sleep Mode | Drives internal clock gating and power-down logic when HIGH - reduces IDD to ≤70mA while retaining data in memory array. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Terminals | 36-bit bidirectional data bus with flow-through output path - data appears at pins with tCD ≤ 8.5ns after CLK rise, no output register latency. |
| LBO | Burst Order Select | DC-level static input selecting linear (LBO=LOW) or interleaved (LBO=HIGH) burst address sequence - must remain stable during burst operation. |
| VDD, VDDQ, VSS | Power/Ground | VDD (3.3V core), VDDQ (3.3V I/O), and multiple VSS pins distributed for noise suppression - requires separate decoupling per power domain. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, delivering read data on same clock edge as address setup - essential for zero-wait-state CPU interfaces. |
| Self-timed write cycle | Internal timing logic completes write without external wait-state insertion - simplifies controller design and maximizes bus utilization. |
| Single-cycle deselect | Chip deactivation completes within one clock cycle via coordinated CE/CS0/CS1 assertion - prevents bus contention during rapid context switching. |
| Byte-selectable write (BW1–BW4) | Enables independent update of four 9-bit segments - preserves data integrity in multi-threaded buffer management without full-word overwrite. |
| Linear/interleaved burst mode | LBO pin configures burst address sequence to match cache-line mapping (e.g., linear for sequential DMA, interleaved for scatter-gather). |
Applications
| Networking Packet Buffer | DSP Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switch ASICs with line-rate forwarding. IC Role / Device Role / Timing Role: High-speed FIFO buffer interfacing directly to MAC controller and packet scheduler logic. Use Value: 8.5ns access + flow-through output enables sub-10ns read turnaround, sustaining 10Gbps+ aggregate throughput with minimal latency jitter. | Use Scenario: Holding coefficient tables and intermediate results in real-time audio processing pipelines. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by dual-MAC DSP cores with burst-aligned instruction fetch. Use Value: Four-word burst mode aligned to LBO-selected interleaved sequence matches 128-bit SIMD load patterns, cutting memory access cycles by 75%. |
| Industrial PLC I/O Module | Radar Signal Processing Buffer |
Use Scenario: Caching sensor input/output status and control registers in deterministic motion-control systems. IC Role / Device Role / Timing Role: Deterministic-access shared memory between ARM Cortex-R host and FPGA-based I/O sequencer. Use Value: Industrial temperature rating (–40°C to +85°C) and single-cycle deselect ensure reliable operation during rapid scan-cycle transitions in harsh factory environments. | Use Scenario: Buffering ADC samples from phased-array radar front-end before FFT computation. IC Role / Device Role / Timing Role: High-bandwidth circular buffer synchronized to sampling clock and FFT engine start trigger. Use Value: ZZ sleep mode reduces standby current to ≤70mA during inter-pulse intervals, extending thermal headroom in compact radar enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BGXI | 256K × 36-bit, 85MHz, 3.3V, 119-ball BGA only - no TQFP option; lacks LBO burst-order select. | Requires PCB redesign for BGA layout; burst sequence fixed to interleaved - limits cache-line optimization flexibility. | Select when BGA footprint is preferred and burst order is fixed; verify thermal dissipation in sealed enclosures. |
| AS7C33256P-85JCIN | 256K × 36-bit, 85MHz, 3.3V, 100-pin TQFP - no ZZ sleep mode; no ADV/LBO burst control; simpler control interface. | Lower power management capability; no burst suspension or configurable sequence - suitable only for basic FIFO use cases. | Select for cost-sensitive, non-burst-intensive applications where sleep mode and advanced burst control are unnecessary. |
Compared with CY7C1371BV33-85BGXI and AS7C33256P-85JCIN, the 71V67703S85BQG8 uniquely combines TQFP packaging, industrial temperature support, programmable burst order (LBO), and full-sleep mode (ZZ) - making it optimal for space-constrained, thermally demanding, and burst-optimized embedded systems.
Availability
71V67703S85BQG8 is available at Aetrix Electronics and suitable for networking packet buffering, DSP data caching, industrial PLC I/O modules, and radar signal processing requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S85BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.
The 71V67703S85BQG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable data buffering in real-time network infrastructure and signal processing systems.
FAQ
What is the maximum clock frequency supported by the 71V67703S85BQG8?
The 71V67703S85BQG8 supports up to 87MHz clock frequency, corresponding to its 8.5ns access time specification (tCD ≤ 8.5ns). This is verified under commercial and industrial temperature ranges with VDD and VDDQ at 3.3V ±5%. The device maintains timing compliance across the full –40°C to +85°C operating range without derating.
Does the 71V67703S85BQG8 support byte-level write control?
Yes, the 71V67703S85BQG8 supports granular byte-level writes via four dedicated byte write enable inputs: BW1 controls I/O0–I/O7 and I/OP1; BW2 controls I/O8–I/O15 and I/OP2; BW3 controls I/O16–I/O23 and I/OP3; BW4 controls I/O24–I/O31 and I/OP4. These operate under BWE gating and are fully functional in the 256K × 36 configuration.
How does the LBO pin affect burst behavior in the 71V67703S85BQG8?
The LBO pin selects burst address order: when LBO = LOW, the 71V67703S85BQG8 executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). This static configuration determines how the internal 2-bit counter increments during ADV-triggered bursts and must remain stable during active burst sequences.
What is the purpose of the ZZ pin on the 71V67703S85BQG8?
When driven HIGH, the ZZ pin places the 71V67703S85BQG8 into full sleep mode, internally gating the clock and reducing supply current to ≤70mA (IZZ). Data retention is guaranteed across the full industrial temperature range. ZZ is asynchronous and requires no setup/hold timing relative to CLK, enabling immediate power-down on system idle detection.
Is the 71V67703S85BQG8 compatible with 3.3V-only system designs?
Yes, the 71V67703S85BQG8 is fully 3.3V-compatible: VDD (core) and VDDQ (I/O) both operate at 3.3V ±5%, with VIH thresholds defined at 2.0V min and VIL at 0.8V max. It requires no external level shifters and meets JEDEC JESD8-12 standards for 3.3V LVTTL/LVCMOS interfacing.
71V67703S85BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQG8 FAQ
1.How can I place an order for 71V67703S85BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQG8 reliable?
The price and inventory of 71V67703S85BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQG8 is usually 5 days.
3.What payment methods are accepted for 71V67703S85BQG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BQG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67703S85BQG8?
71V67703S85BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQG8?
For technical support, including 71V67703S85BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQG8 requirements.
6.How does Aetrix verify that 71V67703S85BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQG8 meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQG8?
All 71V67703S85BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQG8 part is unused and in its original packaging.
Return procedure for 71V67703S85BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
