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Renesas 71V67703S85BQGI
- Part No.:
- 71V67703S85BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQGI.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,506
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Product details
Overview
71V67703S85BQGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It delivers 8.5 ns access time at up to 87 MHz clock frequency, supports byte-write and global-write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and real-time DSP data caching.
For engineers reviewing the 71V67703S85BQGI datasheet, 71V67703S85BQGI pinout, 71V67703S85BQGI application, or 71V67703S85BQGI equivalent, key selection criteria include burst address sequencing (LBO-controlled), self-timed write timing, ZZ sleep-mode current (≤70 mA), and TQFP-100 package compatibility with JEDEC-standard PCB layout.
Technical Context
The 71V67703S85BQGI implements a synchronous, clock-driven architecture with registered address and data inputs, but flow-through (unregistered) outputs-enabling zero-latency read data delivery after tCD. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO pin state (linear vs. interleaved).
Write operation is fully synchronous and supports four modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 controls, and combinations thereof. Power management includes asynchronous ZZ sleep entry (tZZPW ≥100 ns) and guaranteed data retention during low-power mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9M-bit total); supports 512K × 18-bit configuration via pin strapping |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency for full burst throughput |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains prevent noise coupling |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence; ADV controls advance/suspend |
| Power Consumption | ISB1 standby current ≤70 mA (industrial); IZZ sleep current ≤70 mA; IDD active current ≤210 mA @ 87 MHz |
| Operating Temperature | Industrial grade: –40°C to +85°C; validated across full voltage and timing margins |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint |
Pinout & Package
71V67703S85BQGI is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked by corner notch; thermal pad not present. Compatible with standard reflow profiles for lead-free assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching triggered by CLK edge + ADSP/ADSC assertion; A0/A1 define burst word order |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock divider |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) are synchronous load-enable signals; both active LOW |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock and reduces supply current to ≤70 mA; data retention guaranteed |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no output register latency) |
| OE | Output Enable | Asynchronous control: LOW enables drivers; HIGH forces high-Z regardless of chip select state |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: valid data appears tCD (≤8.5 ns) after CLK rise, critical for pipelined systems |
| Single-cycle deselect | Chip deactivation completes within one clock cycle-enables rapid context switching between memory banks |
| Self-timed write cycle | Internal timing logic determines write completion without external wait-state generation or fixed delay insertion |
| Configurable burst addressing | LBO pin allows hardware-selectable linear or interleaved burst order-matches processor cache line mapping requirements |
| Low-power sleep mode | ZZ-controlled sleep draws ≤70 mA (industrial), retains data indefinitely, and resumes operation in ≤100 ns (tZZR) |
Applications
| High-Speed Network Packet Buffer | DSP Real-Time Data Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Synchronous SRAM buffer providing deterministic 8.5 ns read access and burst-aligned writes to match MAC controller timing. Use Value: Enables full-line-rate packet buffering at 10 Gbps with zero-cycle read latency and single-cycle bank deselection for multi-port arbitration. | Use Scenario: Holding coefficient tables and intermediate FFT results in radar signal processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to DSP EMIF with burst-optimized address sequencing. Use Value: Linear burst mode (LBO=LOW) aligns with DSP's natural 4-word vector fetch pattern, reducing bus cycles by 75% vs. discrete reads. |
| Industrial PLC I/O Data Exchange | Medical Imaging Frame Store |
Use Scenario: Caching sensor input and actuator output states across multiple scan cycles in deterministic motion controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM acting as dual-port-accessible shared memory between CPU and real-time I/O engine. Use Value: Guaranteed –40°C to +85°C operation and ZZ sleep mode support extended uptime during idle periods without data loss. | Use Scenario: Temporary storage of uncompressed ultrasound or MRI frame data prior to compression and transmission. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer synchronizing ADC capture and FPGA-based preprocessing pipelines. Use Value: Flow-through outputs eliminate pipeline stalls; 36-bit width matches 12-bit pixel × 3-channel imaging formats with parity overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BGXI | Same 256K×36 organization, 85 MHz max, but uses QDR-II interface with separate read/write clocks and no LBO control | Requires dual-clock routing and lacks linear/interleaved burst flexibility; better suited for high-throughput streaming vs. burst-adaptive systems | Select only if system already uses QDR-II infrastructure and does not require LBO-configurable burst order |
| AS7C3256A-85JCIN | 256K×36 async SRAM; no clock, no burst, no ZZ sleep; 85 ns access, CMOS-compatible | Cannot support burst transfers or clock-synchronized timing; limited to legacy designs without timing-critical pipelines | Choose only for cost-sensitive, non-real-time applications where clock domain isolation is unnecessary |
Compared with CY7C1371BV33-85BGXI and AS7C3256A-85JCIN, the 71V67703S85BQGI uniquely combines flow-through read latency, hardware-selectable burst order (LBO), and industrial-grade sleep mode-making it optimal for deterministic, low-jitter embedded memory subsystems.
Availability
71V67703S85BQGI is available at Aetrix Electronics and suitable for high-speed network packet buffers, DSP real-time data caches, and industrial PLC I/O data exchange requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S85BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.
The 71V67703S85BQGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in networking, telecom, and real-time embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V67703S85BQGI?
The 71V67703S85BQGI supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification. This frequency is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, ensuring reliable burst-mode operation in timing-critical applications such as packet buffering and DSP acceleration.
How does the LBO pin affect burst addressing behavior in the 71V67703S85BQGI?
The LBO pin on the 71V67703S85BQGI statically configures burst sequence order: when pulled LOW, it selects linear burst (00→01→10→11); when HIGH, it selects interleaved burst (00→01→11→10). This setting must remain stable during operation and directly maps to common processor cache line layouts-enabling optimal alignment between memory access patterns and system-level data flow.
Does the 71V67703S85BQGI support byte-level write control, and how is it implemented?
Yes, the 71V67703S85BQGI supports granular byte-level writes via four dedicated BW1–BW4 inputs, each controlling a 9-bit segment of the 36-bit data bus (e.g., BW1 enables I/O0–I/O7 and I/OP1). These operate under synchronous control gated by BWE, allowing partial writes without disturbing other bytes-critical for efficient protocol header updates or mixed-precision data handling.
What is the power-down behavior of the 71V67703S85BQGI when the ZZ pin is asserted?
When ZZ is driven HIGH, the 71V67703S85BQGI enters full sleep mode with internal clock gating, reducing supply current to ≤70 mA (industrial grade) while guaranteeing data retention. Recovery requires tZZR ≥100 ns after ZZ returns LOW, and the device resumes normal operation without reset or initialization-ideal for intermittent processing in battery-constrained or thermally sensitive systems.
Is the 71V67703S85BQGI pin-compatible with other members of the IDT71V67703/7903 family?
The 71V67703S85BQGI shares identical pinout and AC/DC specifications with the 71V67703S75BQGI and 71V67703S80BQGI variants, differing only in speed grade (7.5 ns / 8.0 ns / 8.5 ns). All use the same PKG100 TQFP package and support identical burst, write, and power modes-enabling drop-in replacement within the same speed bin and simplifying design reuse across performance tiers.
71V67703S85BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQGI FAQ
1.How can I place an order for 71V67703S85BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQGI reliable?
The price and inventory of 71V67703S85BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQGI is usually 5 days.
3.What payment methods are accepted for 71V67703S85BQGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BQGI transactions.
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4.How is shipping managed for 71V67703S85BQGI?
71V67703S85BQGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQGI?
For technical support, including 71V67703S85BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQGI requirements.
6.How does Aetrix verify that 71V67703S85BQGI is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQGI meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQGI?
All 71V67703S85BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQGI part is unused and in its original packaging.
Return procedure for 71V67703S85BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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