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Renesas 71V67703S85BQGI8
- Part No.:
- 71V67703S85BQGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQGI8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,436
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Product details
Overview
71V67703S85BQGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz clock frequency, single-cycle deselect, and burst-mode operation enabled by ADV/LBO control logic. It serves as high-bandwidth data buffer in network packet processors and telecom line cards requiring deterministic low-latency memory access.
For engineers reviewing the 71V67703S85BQGI8 datasheet, 71V67703S85BQGI8 pinout, 71V67703S85BQGI8 application, or 71V67703S85BQGI8 equivalent, key selection criteria include its JEDEC-standard 100-pin TQFP package, 3.3V core/I/O supply compatibility, industrial temperature range (–40°C to +85°C), and support for linear/interleaved burst sequences via LBO pin configuration.
Technical Context
This SRAM implements a synchronous interface with registered address/data inputs, flow-through (unregistered) outputs, and internal burst address counter driven by ADV and LBO. Its self-timed write cycle supports global write (GW) and byte-write (BW1–BW4) modes, with CE/CS0/CS1 chip select hierarchy and asynchronous OE/ZZ controls.
The device uses a dual-voltage design: VDD = 3.3V ±5% for core logic and VDDQ = 3.3V ±5% for I/O drivers. Power-down is triggered asynchronously via ZZ input, reducing supply current to ≤70 mA in full sleep mode while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit mode via address mapping |
| Access Time | 8.5 ns max - guarantees valid data output within 8.5 ns after CLK rising edge under industrial conditions |
| Maximum Clock Frequency | 87 MHz - enables sustained burst throughput of 348 MB/s (4 × 36-bit words/cycle) |
| Supply Voltages | VDD = 3.3V ±5%, VDDQ = 3.3V ±5% - requires separate low-noise regulation for core and I/O rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems without derating |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint |
| Power Consumption | ISB2 = 155 mA max (clock running, deselected); IZZ = 70 mA max (full sleep mode) |
Pinout & Package
71V67703S85BQGI8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (marked dot), and pin numbering proceeds counterclockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP or ADSC is active low; A0/A1 define burst sequence order |
| CLK | System Clock Input | Primary timing reference; all synchronous operations referenced to rising edge; no internal clock division |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level hierarchical enable: CE must be low, CS0 high, CS1 low for device selection |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte writes; BW1–BW4 select 9-bit byte lanes (I/O0–7+I/OP1, etc.) |
| ADV, LBO | Burst Control Inputs | ADV advances internal burst counter; LBO selects linear (LBO=LOW) or interleaved (LBO=HIGH) burst order |
| OE, ZZ | Output & Sleep Controls | OE (asynchronous) enables/disables I/O drivers; ZZ (asynchronous) gates CLK and reduces IDD to ≤70 mA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; flow-through output path eliminates output register delay |
| VDD, VDDQ, VSS | Power/Ground | VDD powers core logic; VDDQ powers I/O drivers; separate VDD/VDDQ pins require independent decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - data appears on I/O pins within tCD (≤8.5 ns) of CLK edge, critical for pipeline-aligned systems |
| Single-cycle deselect | Device enters high-impedance state on next clock edge after CE/CS deassertion - prevents bus contention during rapid switching |
| Configurable burst mode | LBO pin selects linear or interleaved 4-word burst sequence - matches cache line ordering requirements in RISC processors |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation - simplifies controller interface and improves bandwidth efficiency |
| Industrial temperature support | Full functionality and AC timing guaranteed from –40°C to +85°C - suitable for base station, industrial PLC, and transportation electronics |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency data buffer interfacing directly to packet processor's synchronous bus with burst-aligned reads/writes. Use Value: 8.5 ns tCD and single-cycle deselect ensure frame buffering adds ≤9 ns pipeline delay per access, enabling line-rate forwarding at 10 Gbps. |
Use Scenario: Holding voice channel samples and signaling data in TDM-based optical line cards operating across wide ambient temperatures. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic access to time-division multiplexed data streams synchronized to system clock. Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V I/O compatibility ensure reliable operation in uncontrolled outdoor cabinets without thermal throttling. |
| Baseband Processor Cache | Radar Signal Processing Buffer |
|
Use Scenario: Acting as L2 cache tag RAM and instruction scratchpad in LTE/5G baseband SoCs where burst locality is high. IC Role / Device Role / Timing Role: Burst-mode SRAM delivering four 36-bit words per address cycle to match processor fetch width and reduce bus occupancy. Use Value: Linear/interleaved burst selection (via LBO) aligns with ARM Cortex-A or DSP cache line mapping, improving hit rate by >12% vs non-burst memory. |
Use Scenario: Capturing ADC samples from phased-array radar receivers before FFT processing, requiring jitter-free, high-throughput storage. IC Role / Device Role / Timing Role: Flow-through SRAM accepting continuous 87 MHz sampled data with no output register skew between adjacent words. Use Value: tCDC ≤2 ns ensures minimal inter-word timing skew across 36-bit parallel bus - preserves phase coherence critical for beamforming algorithms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-8BGXI | 256K × 36-bit, 8 ns access, 119-ball BGA only - no TQFP option; higher IDD (210 mA @ 8 ns) | Requires PCB redesign for BGA layout; better suited for space-constrained, high-density designs | Select when board area is constrained and BGA assembly capability exists; avoid if TQFP rework or test access is required. |
| AS7C3256A-8TIN | 256K × 36-bit, 8 ns access, 100-pin TQFP, but commercial temp only (0°C to +70°C); no ZZ sleep mode | Lacks industrial temp rating and deep power-down - unsuitable for outdoor or extended-temperature deployments | Acceptable for cost-sensitive indoor telecom equipment with controlled environments; not recommended for base stations or rail systems. |
Compared with CY7C1371BV33-8BGXI and AS7C3256A-8TIN, the 71V67703S85BQGI8 uniquely combines industrial temperature support, TQFP packaging, and hardware-controlled sleep mode (ZZ) - making it the only option among the three qualified for ruggedized, field-deployable infrastructure hardware.
Availability
71V67703S85BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.
Supply support for 71V67703S85BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for industrial, automotive, and communications markets.
The 71V67703S85BQGI8 belongs to IDT's legacy high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented data buffering in telecom infrastructure, networking ASICs, and real-time signal processing systems.
FAQ
What is the maximum clock frequency supported by the 71V67703S85BQGI8?
The 71V67703S85BQGI8 supports a maximum clock frequency of 87 MHz, corresponding to its 8.5 ns access time specification. This frequency is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, enabling sustained 348 MB/s burst throughput. Operation above 87 MHz violates AC timing parameters and may result in data corruption.
Does the 71V67703S85BQGI8 support both linear and interleaved burst modes?
Yes, the 71V67703S85BQGI8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when LBO is HIGH, it uses interleaved order (00→01→11→10). The LBO pin is static and must remain stable during burst operation to prevent address sequencing errors.
How does the flow-through output architecture of the 71V67703S85BQGI8 affect system timing?
The flow-through output architecture of the 71V67703S85BQGI8 eliminates the output register delay found in pipelined SRAMs, delivering valid data within tCD ≤8.5 ns after the CLK rising edge. This reduces total read latency by one clock cycle compared to registered-output devices, enabling tighter timing margins in high-speed pipelines such as those in packet processors and DSPs.
Can the 71V67703S85BQGI8 operate with separate core and I/O voltage supplies?
Yes, the 71V67703S85BQGI8 requires two independent 3.3V supplies: VDD (core logic, pins 12, 22, 37, 47, 57, 67, 77, 87) and VDDQ (I/O drivers, pins 40, 49, 58, 68, 78, 88, 98). Both must be regulated to 3.3V ±5%. Separation allows optimized noise isolation and prevents I/O switching noise from affecting core timing - essential for jitter-sensitive applications like radar sampling.
What is the purpose of the ZZ pin on the 71V67703S85BQGI8, and how does it impact power consumption?
The ZZ pin on the 71V67703S85BQGI8 enables full sleep mode: when driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70 mA (IZZ), while retaining data in memory. This mode is asynchronous and takes effect within tZZR ≤100 ns. It is used during system idle periods to cut dynamic power without requiring full reinitialization upon wake-up.
71V67703S85BQGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQGI8 FAQ
1.How can I place an order for 71V67703S85BQGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQGI8 reliable?
The price and inventory of 71V67703S85BQGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQGI8 is usually 5 days.
3.What payment methods are accepted for 71V67703S85BQGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BQGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67703S85BQGI8?
71V67703S85BQGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BQGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQGI8?
For technical support, including 71V67703S85BQGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQGI8 requirements.
6.How does Aetrix verify that 71V67703S85BQGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQGI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQGI8?
All 71V67703S85BQGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQGI8 part is unused and in its original packaging.
Return procedure for 71V67703S85BQGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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