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Renesas 71V67703S85BQI
- Part No.:
- 71V67703S85BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQI.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:272
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Product details
Overview
71V67703S85BQI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs and single-cycle deselect. It supports 8.5ns access time at up to 87MHz clock frequency, features LBO-controlled linear/interleaved burst mode, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth packet buffering and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67703S85BQI datasheet, 71V67703S85BQI pinout, 71V67703S85BQI application, or 71V67703S85BQI equivalent, key selection criteria include burst address sequencing control via LBO, flow-through output architecture eliminating output register latency, 100-pin TQFP package compatibility, and support for 3.3V I/O with VDDQ separation.
Technical Context
The 71V67703S85BQI implements a synchronous, clock-driven interface with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling zero-cycle output delay after clock edge. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) based on static LBO level.
Burst operation delivers four consecutive 36-bit words per address latch, with first-word tCD = 8.5ns and subsequent words aligned to rising clock edges. Write cycles are self-timed and support global (GW), byte-write-enable (BWE), and individual byte-write (BW1–BW4) control-allowing partial writes without bus turnaround.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 8.5ns access time; supports up to 87MHz clock frequency with guaranteed timing margins |
| Supply Voltages | 3.3V ±5% core (VDD); separate 3.3V ±5% I/O supply (VDDQ) for noise isolation |
| Burst Mode | Four-word burst with programmable linear or interleaved sequence controlled by LBO pin |
| Output Architecture | Flow-through (no output register); data appears on I/O pins within tCD = 8.5ns of CLK rise |
| Power Management | Asynchronous ZZ input enables full sleep mode with IZZ ≤ 70mA (industrial) |
| Operating Temperature | Industrial grade: –40°C to +85°C; validated across full voltage and frequency range |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant. Pinout matches PKG100 footprint for 256K × 36 configuration (71V67703).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching triggered by ADSP/ADSC low + CE low; A0–A17 used for 256K×36 addressing |
| CLK | System Clock Input | Single-ended clock reference for all synchronous operations; defines tCYC = 11.5ns min (87MHz) |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.) |
| LBO | Burst Order Select | Static DC input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10) |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock and reduces IDD to ≤70mA; retains data without external refresh |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; flow-through outputs disable on OE HIGH or during write |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay-data valid within 8.5ns of CLK rise, enabling tight system timing closure |
| Single-cycle deselect | Device enters high-Z state on next clock edge after chip disable, preventing bus contention in multi-SRAM systems |
| Configurable burst addressing | LBO pin statically selects linear or interleaved 4-word burst sequence-matching processor cache line ordering requirements |
| Independent VDD/VDDQ supplies | Separate core and I/O power domains reduce switching noise coupling and improve signal integrity on data bus |
| Self-timed write cycle | Internal logic finalizes write decision at end of cycle-simplifies timing margining and supports variable-latency memory controllers |
Applications
| Network Packet Buffering | High-Performance Cache Subsystem |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or PCIe packets in switch fabric ASICs with strict latency budgets. IC Role / Device Role / Timing Role: Primary burst-access buffer providing 36-bit wide, 8.5ns-read, flow-through data delivery to packet parser/serializer logic. Use Value: Single-cycle deselect and burst mode enable 4× throughput per address cycle-reducing controller overhead and improving packet processing rate. | Use Scenario: Serving as L2/L3 cache tag/data RAM in embedded RISC-V or ARM-based SoCs requiring deterministic access. IC Role / Device Role / Timing Role: Synchronous SRAM delivering 87MHz burst reads with no output register jitter-aligning cleanly with CPU clock domain. Use Value: Linear/interleaved burst selection via LBO matches specific cache line fetch patterns, minimizing address translation overhead. |
| Telecom Line Card Memory | Industrial Real-Time Controller Buffer |
Use Scenario: Buffering TDM or CPRI frames in base station remote radio units operating at extended temperature. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM with ZZ sleep mode for low-power idle states between frame bursts. Use Value: Full sleep current ≤70mA ensures thermal compliance in sealed, fanless enclosures while retaining cache coherency. | Use Scenario: Holding motion-control command queues and sensor fusion buffers in CNC or robotics PLCs. IC Role / Device Role / Timing Role: Deterministic 8.5ns read/write timing ensures jitter-free execution of hard real-time servo loops. Use Value: Byte-write enables (BW1–BW4) allow atomic updates to individual axis parameters without locking full 36-bit bus. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18-bit organization; 165-ball fBGA only; no LBO pin-fixed interleaved burst | Requires PCB redesign for BGA; suited for space-constrained designs where 18-bit bus width suffices | Select when board layout prioritizes density over pin compatibility and 18-bit data path is acceptable |
| AS7C3256A | Commercial temp only (0°C to +70°C); 32K × 8-bit async SRAM; no burst, no flow-through, no ZZ sleep | Lacks synchronous timing, burst capability, and industrial temp rating-unsuitable for high-speed deterministic systems | Consider only for cost-sensitive, non-real-time control applications with relaxed timing and environmental requirements |
Compared with CY7C1373KV18 and AS7C3256A, the 71V67703S85BQI uniquely combines industrial temperature support, flow-through output latency, configurable burst order, and 100-pin TQFP compatibility-making it optimal for upgradeable, thermally demanding, and timing-critical embedded systems.
Availability
71V67703S85BQI is available at Aetrix Electronics and suitable for network packet buffering, high-performance cache subsystems, and industrial real-time controller buffer applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67703S85BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.
The 71V67703S85BQI belongs to IDT's legacy high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in networking, telecom, and industrial control systems demanding burst-mode performance and industrial reliability.
FAQ
What is the maximum clock frequency supported by the 71V67703S85BQI?
The 71V67703S85BQI supports up to 87MHz clock frequency, corresponding to its 8.5ns access time specification (tCD ≤ 8.5ns). This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The device meets all AC timing parameters-including tCYC ≥ 11.5ns, tCH ≥ 4.5ns, and tCL ≥ 4.5ns-at this frequency.
Does the 71V67703S85BQI support both linear and interleaved burst modes?
Yes, the 71V67703S85BQI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the burst follows linear order (00→01→10→11); when LBO = HIGH, it follows interleaved order (00→01→11→10). LBO is a static DC input and must remain stable during burst operation.
What is the function of the ZZ pin on the 71V67703S85BQI?
The ZZ pin on the 71V67703S85BQI is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (industrial grade) while retaining data. ZZ requires no setup/hold timing relative to CLK and is active-HIGH. Data retention is guaranteed throughout the industrial temperature range.
How many byte-write enable signals does the 71V67703S85BQI provide?
The 71V67703S85BQI provides four independent byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus (BW1 → I/O0–7 & I/OP1; BW2 → I/O8–15 & I/OP2; etc.). These operate under control of the synchronous BWE pin and allow partial writes without affecting other bytes.
Is the 71V67703S85BQI compatible with 5V-tolerant systems?
No, the 71V67703S85BQI is not 5V-tolerant. It requires strictly 3.3V ±5% for both core (VDD) and I/O (VDDQ) supplies. Input voltage limits are VIH ≤ VDD + 0.3V (for control pins) or VDDQ + 0.3V (for I/O), and VIL ≥ –0.3V. Exceeding these may cause permanent damage per absolute maximum ratings.
71V67703S85BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQI FAQ
1.How can I place an order for 71V67703S85BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQI reliable?
The price and inventory of 71V67703S85BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQI is usually 5 days.
3.What payment methods are accepted for 71V67703S85BQI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BQI transactions.
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71V67703S85BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQI?
For technical support, including 71V67703S85BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQI requirements.
6.How does Aetrix verify that 71V67703S85BQI is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQI meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQI?
All 71V67703S85BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQI part is unused and in its original packaging.
Return procedure for 71V67703S85BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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