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Renesas 71V67703S85BQI8
- Part No.:
- 71V67703S85BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S85BQI8.pdf
- Description:
- IC SRAM 9MBIT PAR 87MHZ 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,543
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Product details
Overview
71V67703S85BQI8 from IDT (now Renesas) is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and features self-timed write with global/byte write control - used in high-bandwidth packet buffering and cache subsystems.
For engineers reviewing the 71V67703S85BQI8 datasheet, 71V67703S85BQI8 pinout, 71V67703S85BQI8 application, or 71V67703S85BQI8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), flow-through output timing (tCD = 8.5 ns), ZZ sleep mode current (IZZ = 50–70 mA), and JEDEC-standard 100-pin TQFP packaging with VDD/VDDQ separation.
Technical Context
The 71V67703S85BQI8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling deterministic read latency tied directly to tCD. Its internal burst counter advances on ADV assertion and selects sequence order via LBO pin state (linear vs. interleaved).
Burst operation delivers four consecutive 36-bit words per address cycle; write cycles support both global (GW) and byte-level (BW1–BW4) control with BWE gating, and power management includes asynchronous ZZ sleep entry with guaranteed data retention and tZZR = 100 ns recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9,175,040 bits); supports 512K × 18-bit via pin-compatible variant |
| Access Time / Max Frequency | 8.5 ns access time; enables reliable operation up to 87 MHz system clock |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); independent rails reduce noise coupling |
| Operating Temperature | –40°C to +85°C industrial grade; validated for embedded networking and industrial control |
| Power Consumption | ISB1 = 50–70 mA standby (deselected), IZZ = 50–70 mA full sleep; low-power mode reduces thermal load |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change allowed |
| Output Architecture | Flow-through (no output register); eliminates output clock-to-data skew, simplifies timing closure |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated for 256K × 36 configuration (PKG100); A0–A18 address lines, 36 data I/Os (I/O0–I/O31 + I/OP1–I/OP4), and dedicated burst/control signals including ADV, ADSP, ADSC, LBO, and ZZ.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; 19-bit addressing for 256K × 36 |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+P1, etc.) |
| ADV, ADSP, ADSC | Burst Address Management | ADSP/ADSC load address register; ADV advances internal burst counter; all synchronous to CLK |
| LBO | Burst Order Selector | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock, reduces IDD to IZZ level; no setup required, tZZPW = 100 ns minimum pulse width |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through; no output enable skew |
| OE | Asynchronous Output Enable | LOW enables drivers; HIGH forces high-Z regardless of chip select state - supports bus sharing |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay; tCD = 8.5 ns is pure array access + routing delay - critical for tight read-to-read timing |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle; prevents bus contention during rapid select switching |
| Self-timed write with byte granularity | GW or BWx assertion triggers internal write timer; no external write pulse width management needed |
| Linear/interleaved burst mode | LBO-configurable 4-word burst sequence matches CPU/cache line ordering requirements without software overhead |
| Independent VDD/VDDQ supplies | Core and I/O power domains isolated; allows mixed-voltage system integration and reduces simultaneous switching noise |
Applications
| Network Packet Buffering | High-Speed Cache Interface |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or PCIe packets in switch fabric ASICs requiring low-latency, burst-access memory. IC Role / Device Role / Timing Role: Primary packet buffer SRAM; provides 36-bit wide, 87 MHz burst reads/writes synchronized to line-rate clocks. Use Value: Flow-through outputs deliver first data word in 8.5 ns; single-cycle deselect enables rapid context switching between traffic queues. | Use Scenario: Serving as L2/L3 cache tag/data RAM in FPGA-based compute accelerators or embedded processors. IC Role / Device Role / Timing Role: Synchronous cache SRAM interfacing directly to processor AXI or Avalon-MM bus with burst coherency support. Use Value: Linear burst mode aligns with 128-bit cache line fetches; VDD/VDDQ separation minimizes I/O noise affecting core logic. |
| Industrial PLC Data Logging | Medical Imaging Frame Buffer |
Use Scenario: Capturing real-time sensor streams (e.g., multi-channel ADC data) in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability buffer memory operating continuously at –40°C to +85°C with guaranteed data retention in ZZ sleep mode. Use Value: Industrial temp rating and 70 mA max IZZ ensure stable logging during brown-out events without external backup power. | Use Scenario: Temporary storage of uncompressed ultrasound or MRI frame data before compression or display rendering. IC Role / Device Role / Timing Role: Burst-capable frame buffer supporting 36-bit pixel packing and rapid DMA transfers from imaging ASICs. Use Value: 9-Mbit density and 8.5 ns tCD enable sub-microsecond pixel access; flow-through outputs prevent pipeline stalls in real-time display engines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18 organization; same 100-pin TQFP, 8.5 ns speed grade, but no LBO burst-order control | Optimized for 18-bit bus systems; lacks configurable burst sequence - fixed linear only | Select when 18-bit data width suffices and burst order flexibility is unnecessary |
| AS7C362000B | 256K × 36 organization; 10 ns access, 100-pin TQFP, but no ZZ sleep mode or ADV/ADSC burst controls | Cost-optimized general-purpose SRAM; lacks advanced burst management and low-power sleep | Select for non-burst, non-sleep applications where 1.5 ns slower access is acceptable |
Compared with CY7C1373KV18 and AS7C362000B, the 71V67703S85BQI8 uniquely combines 256K × 36 density, LBO-selectable burst order, and ZZ sleep - making it optimal for industrial and networking designs requiring configurability, low power, and deterministic timing.
Availability
71V67703S85BQI8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache interfaces, and industrial PLC data logging requiring stable component supply and long-term lifecycle support.
Supply support for 71V67703S85BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V67703S85BQI8 belongs to IDT's high-performance synchronous SRAM product line, designed specifically for bandwidth-intensive applications demanding burst-mode access, low-latency flow-through outputs, and robust industrial temperature operation.
FAQ
What is the maximum clock frequency supported by the 71V67703S85BQI8?
The 71V67703S85BQI8 supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) and requires compliance with tCH ≥ 4.5 ns and tCL ≥ 4.5 ns timing constraints per the datasheet AC characteristics table.
Does the 71V67703S85BQI8 support both linear and interleaved burst modes?
Yes, the 71V67703S85BQI8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear sequence (00→01→10→11), and LBO = HIGH selects interleaved (00→01→11→10). LBO is a static input and must not change during active operation.
How does the ZZ pin function in the 71V67703S85BQI8?
The ZZ pin on the 71V67703S85BQI8 enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to IZZ (50–70 mA). Data retention is guaranteed, and tZZR = 100 ns recovery time is required before valid operation resumes after ZZ returns LOW.
What is the role of ADV, ADSP, and ADSC pins in the 71V67703S85BQI8?
In the 71V67703S85BQI8, ADSP and ADSC are synchronous address status inputs that load the address register on the rising CLK edge; ADV advances the internal burst counter. ADSP is gated by CE, while ADSC operates independently - enabling flexible interface to processors or cache controllers.
Is the 71V67703S85BQI8 pin-compatible with the 71V67903 series?
No - the 71V67703S85BQI8 (256K × 36) and 71V67903 (512K × 18) share functional similarity and package options, but differ in address/data pin mapping: 71V67903 omits BW3/BW4 and reassigns A17/A18, making them not pin-compatible. Board redesign is required for substitution.
71V67703S85BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S85BQI8 FAQ
1.How can I place an order for 71V67703S85BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85BQI8 reliable?
The price and inventory of 71V67703S85BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85BQI8 is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85BQI8 transactions.
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4.How is shipping managed for 71V67703S85BQI8?
71V67703S85BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85BQI8?
For technical support, including 71V67703S85BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85BQI8 requirements.
6.How does Aetrix verify that 71V67703S85BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S85BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85BQI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S85BQI8?
All 71V67703S85BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85BQI8 part is unused and in its original packaging.
Return procedure for 71V67703S85BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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