Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67703S85PFG

Name: 71V67703S85PFG
Brand: Renesas
SKU: 71V67703S85PFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 71V67703S85PFG

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V67703S85PFG.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,395

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

71V67703S85PFG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz clock frequency, single-cycle deselect, and linear/interleaved burst mode controlled by LBO pin. It operates across industrial temperature range (–40°C to +85°C) and supports byte-write and global-write operations for high-bandwidth memory subsystems in networking and telecom line cards.

For engineers reviewing the 71V67703S85PFG datasheet, 71V67703S85PFG pinout, 71V67703S85PFG application, or 71V67703S85PFG equivalent, key selection criteria include burst timing compliance, 100-pin TQFP mechanical compatibility, ZZ-controlled sleep mode current (≤70 mA), and flow-through output latency versus registered-output alternatives.

Technical Context

The 71V67703S85PFG implements a synchronous, clock-driven interface with separate address status inputs (ADSP/ADSC) and burst advance control (ADV). Its flow-through output path eliminates output register delay, delivering data on the same clock edge as address latch-critical for low-latency cache coherency protocols.

Burst sequencing is managed by a binary counter synchronized to CLK, with LBO selecting between linear (A0/A1 incrementing) or interleaved (A0/A1 toggling per sequence) addressing. Write cycles are self-timed and support both global (GW) and individual byte (BW1–BW4) write enables, with BWE gating byte-select functionality.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping - enables flexible bus-width matching without external demultiplexing.
Access Time	8.5 ns max at 87 MHz clock - guarantees deterministic read latency for real-time packet buffering in Layer 2/3 switches.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - requires dual 3.3V rails; no level-shifting needed for 3.3V logic interfaces.
Burst Mode	Four-word burst initiated by single address; LBO selects linear or interleaved order - reduces address bus traffic by 75% per burst transaction.
Sleep Current	IZZ ≤ 70 mA at VDD = max, ZZ = HIGH - enables power-gating during idle periods in energy-constrained embedded systems.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm) - compatible with standard SMT reflow profiles and IPC-7351 footprint libraries.
Temperature Range	–40°C to +85°C (industrial grade) - validated for operation in uncontrolled ambient environments like base station cabinets.

Pinout & Package

71V67703S85PFG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge when ADSP or ADSC is active LOW - supports 256K × 36 (19-bit address) configuration.
CLK	System Clock Input	Primary timing reference; all synchronous operations (address capture, burst advance, write strobes) referenced to rising edge.
ADSP / ADSC	Address Status Inputs	Asynchronous-active-LOW signals indicating valid address; ADSP gated by CE, ADSC independent - enables processor/cache controller arbitration.
ADV	Burst Address Advance	Active-LOW input that increments internal burst counter; held HIGH to suspend burst - allows dynamic burst termination mid-sequence.
LBO	Burst Order Select	DC-level input (LOW = linear, HIGH = interleaved) - must remain static during operation; defines A0/A1 progression for four-word burst.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE enables byte-write mode; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) - supports partial-word updates without read-modify-write.
OE	Output Enable	Asynchronous active-LOW - enables flow-through outputs immediately; critical for glitch-free bus sharing in multi-master systems.
ZZ	Sleep Mode Input	Asynchronous active-HIGH - gates internal CLK and reduces supply current to IZZ; retains data during sleep.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous data bus; input path registered, output path flow-through - eliminates output register skew for timing-critical reads.

Key Features

Feature	Design Value
Flow-through output architecture	Zero-cycle output registration delivers data on same CLK edge as address latch - reduces read latency by one clock cycle vs. registered-output SRAMs.
Single-cycle deselect	Chip deactivation completes within one CLK period - enables rapid context switching between memory banks in multi-protocol controllers.
Self-timed write cycle	Internal timing logic eliminates need for external write pulse generation - simplifies FPGA/CPLD interface design and improves timing margin.
Linear/interleaved burst mode	LBO pin configures burst address sequence to match processor cache line layout - avoids software overhead of manual address calculation.
Industrial temperature support	Validated operation from –40°C to +85°C - qualified for deployment in outdoor telecom infrastructure and industrial automation PLCs.

Applications

Packet Buffering in Ethernet Switch ASICs	Cache Memory for DSP-Based Baseband Processors
Use Scenario: High-speed frame buffering between MAC and switching fabric, requiring deterministic 8.5 ns read access and burst writes for fragmented packet reassembly. IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to 36-bit wide switch fabric bus; provides flow-through read outputs synchronized to system clock. Use Value: Single-cycle deselect and 87 MHz burst capability enable line-rate 10G Ethernet buffering without pipeline stalls or external FIFOs.	Use Scenario: On-chip L2 cache extension for multi-core DSPs in 4G/5G baseband units, where low-latency access to coefficient tables and FFT buffers is critical. IC Role / Device Role / Timing Role: External synchronous cache SRAM with burst-mode addressing aligned to DSP's 4-word cache line size. Use Value: Linear burst mode (LBO = LOW) matches natural DSP address stride, reducing address bus cycles by 75% per cache line fill.
Control Plane Memory in Telecom Line Cards	Real-Time Data Logging in Industrial PLCs
Use Scenario: Storing routing tables, session state, and QoS policy entries in carrier-grade routers, requiring non-volatile retention during sleep and fast random access. IC Role / Device Role / Timing Role: Control plane memory mapped to CPU via synchronous bus; uses ZZ sleep mode during low-traffic periods to reduce thermal load. Use Value: IZZ ≤ 70 mA in sleep mode extends thermal headroom in densely packed line cards without compromising data retention.	Use Scenario: Cyclic data acquisition from analog I/O modules in programmable logic controllers, requiring reliable write endurance and deterministic timing under variable load. IC Role / Device Role / Timing Role: Buffered data store accepting timestamped sensor samples via byte-write (BW1–BW4) to avoid overwriting active channels. Use Value: Individual byte write enables allow concurrent logging to multiple sensor groups without full-word write conflicts or bus contention.

Packet Buffering in Ethernet Switch ASICs

Cache Memory for DSP-Based Baseband Processors

Use Scenario: High-speed frame buffering between MAC and switching fabric, requiring deterministic 8.5 ns read access and burst writes for fragmented packet reassembly.

IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to 36-bit wide switch fabric bus; provides flow-through read outputs synchronized to system clock.

Use Value: Single-cycle deselect and 87 MHz burst capability enable line-rate 10G Ethernet buffering without pipeline stalls or external FIFOs.

Use Scenario: On-chip L2 cache extension for multi-core DSPs in 4G/5G baseband units, where low-latency access to coefficient tables and FFT buffers is critical.

IC Role / Device Role / Timing Role: External synchronous cache SRAM with burst-mode addressing aligned to DSP's 4-word cache line size.

Use Value: Linear burst mode (LBO = LOW) matches natural DSP address stride, reducing address bus cycles by 75% per cache line fill.

Control Plane Memory in Telecom Line Cards

Real-Time Data Logging in Industrial PLCs

Use Scenario: Storing routing tables, session state, and QoS policy entries in carrier-grade routers, requiring non-volatile retention during sleep and fast random access.

IC Role / Device Role / Timing Role: Control plane memory mapped to CPU via synchronous bus; uses ZZ sleep mode during low-traffic periods to reduce thermal load.

Use Value: IZZ ≤ 70 mA in sleep mode extends thermal headroom in densely packed line cards without compromising data retention.

Use Scenario: Cyclic data acquisition from analog I/O modules in programmable logic controllers, requiring reliable write endurance and deterministic timing under variable load.

IC Role / Device Role / Timing Role: Buffered data store accepting timestamped sensor samples via byte-write (BW1–BW4) to avoid overwriting active channels.

Use Value: Individual byte write enables allow concurrent logging to multiple sensor groups without full-word write conflicts or bus contention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-85BGXI	256K × 32-bit organization; 85 MHz max clock; 3.3V core/I/O; 119-ball BGA only - no TQFP option.	Requires PCB redesign due to BGA-only packaging and 32-bit bus width - unsuitable for drop-in replacement in existing 36-bit TQFP designs.	Select when board space is constrained and BGA assembly is available; verify 32-bit data alignment in firmware.
AS7C3256B-85JCIN	256K × 32-bit; 85 MHz; 3.3V; 100-pin TQFP; no burst mode or LBO - basic synchronous SRAM with no burst counter.	Lacks burst addressing and flow-through output - increases CPU overhead for sequential accesses and adds 1-cycle output latency.	Choose for cost-sensitive, non-burst applications where deterministic single-word latency is prioritized over bandwidth efficiency.

Compared with CY7C1371BV33-85BGXI and AS7C3256B-85JCIN, the 71V67703S85PFG uniquely delivers 36-bit width, 100-pin TQFP compatibility, and hardware-managed linear/interleaved burst - enabling higher throughput in legacy 36-bit bus architectures without FPGA glue logic.

Availability

71V67703S85PFG is available at Aetrix Electronics and suitable for packet buffering in Ethernet switches, cache expansion for DSP-based baseband processors, and control plane memory in telecom line cards requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V67703S85PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.

The 71V67703S85PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for bandwidth-intensive, low-latency applications in networking infrastructure and real-time embedded systems.

FAQ

What is the maximum operating frequency supported by the 71V67703S85PFG?

The 71V67703S85PFG supports up to 87 MHz clock frequency with an 8.5 ns access time specification. This is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device also supports 100 MHz (8.0 ns) and 117 MHz (7.5 ns) variants under commercial temperature conditions, but the 71V67703S85PFG itself is rated for 87 MHz maximum.

Does the 71V67703S85PFG support both linear and interleaved burst modes?

Yes, the 71V67703S85PFG supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (A0/A1 incrementing); when LBO is HIGH, it executes interleaved burst (A0/A1 toggling per word). The LBO pin is asynchronous and must remain static during active operation to prevent burst sequence corruption.

How does the flow-through output architecture of the 71V67703S85PFG affect timing?

The flow-through output architecture of the 71V67703S85PFG eliminates the output register, delivering valid data on the same rising CLK edge used to latch the address. This results in tCD = 8.5 ns (clock-to-data) with zero additional output register delay - a key advantage over registered-output SRAMs where tCD includes both array access and register propagation delays.

What is the function of the ZZ pin on the 71V67703S85PFG?

The ZZ pin on the 71V67703S85PFG is an asynchronous active-HIGH sleep mode input. When asserted HIGH, it internally gates the CLK signal and reduces core supply current to IZZ ≤ 70 mA while retaining memory contents. Recovery from sleep requires tZZR ≥ 100 ns after ZZ returns LOW, and the device must be deselected during wake-up.

Can the 71V67703S85PFG be used in a 512K × 18-bit configuration?

Yes, the 71V67703S85PFG supports 512K × 18-bit organization through pin-strapping and address mapping. In this mode, A18 becomes functional and BW3/BW4 are not used (per datasheet note). The 100-pin TQFP package accommodates both configurations, with pin assignments differing slightly - refer to "Pin Configuration – 512K x 18, PKG100" in the official datasheet for exact mapping.

71V67703S85PFG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 87 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V67703S85PFG FAQ

1.How can I place an order for 71V67703S85PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S85PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S85PFG reliable?

The price and inventory of 71V67703S85PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85PFG is usually 5 days.

3.What payment methods are accepted for 71V67703S85PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S85PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67703S85PFG?

71V67703S85PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67703S85PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67703S85PFG?

For technical support, including 71V67703S85PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85PFG requirements.

6.How does Aetrix verify that 71V67703S85PFG is sourced from the original manufacturer or authorized distributors?

All 71V67703S85PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85PFG meets industry standards.

7.What is the process for return or replacement of 71V67703S85PFG?

All 71V67703S85PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S85PFG part is unused and in its original packaging.

Return procedure for 71V67703S85PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…