Renesas 71V67703S85PFG8
- Part No.:
- 71V67703S85PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67703S85PFG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,836
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Product details
Overview
71V67703S85PFG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 8.5 ns access time at 87 MHz, single-cycle deselect, and burst-mode operation controlled by ADV and LBO inputs. It supports byte-write enable (BW1–BW4), global write (GW), and sleep mode via ZZ input - deployed in high-speed networking packet buffers and telecom line-card memory subsystems.
For engineers reviewing the 71V67703S85PFG8 datasheet, 71V67703S85PFG8 pinout, 71V67703S85PFG8 application, or 71V67703S85PFG8 equivalent, key selection criteria include burst-order configuration (linear vs. interleaved), flow-through timing constraints, 100-pin TQFP mechanical compatibility, and industrial-grade power-down current (IZZ = 70 µA).
Technical Context
The 71V67703S85PFG8 implements a synchronous, clock-driven architecture with registered address and data inputs, but unregistered (flow-through) outputs - enabling deterministic tCD = 8.5 ns clock-to-data delay. Its internal burst counter advances on ADV = LOW and selects linear or interleaved sequence based on static LBO pin state.
Write control uses hierarchical enables: GW overrides all byte writes; BWE gates BW1–BW4; each BWx controls a 9-bit data byte (I/O0–I/O31 + I/OP1–I/OP4). Sleep mode is entered asynchronously via ZZ = HIGH, reducing supply current to 70 µA while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping on A18 |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Burst Mode | Four-word burst initiated by ADV = LOW; order selected by LBO (linear or interleaved) |
| Power-Down Current | IZZ = 70 µA (industrial temp); enabled by asynchronous ZZ = HIGH |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained thermal cycling |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body |
Pinout & Package
71V67703S85PFG8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm footprint, with exposed pad not electrically connected. Pin 1 marked by corner notch; pin numbering counterclockwise from top-left.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte-write mode; BWx select 9-bit bytes |
| ADV, LBO, ZZ | Mode Control Inputs | ADV advances burst counter; LBO selects linear/interleaved order; ZZ enters sleep mode |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; flow-through output path (no output register) |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - enables tCD = 8.5 ns with no added clock-to-output skew |
| Single-cycle deselect | Device transitions to high-Z output state within one CLK cycle after chip disable |
| Configurable burst order | LBO pin statically selects linear or interleaved 4-word burst addressing without firmware overhead |
| Asynchronous sleep entry | ZZ = HIGH immediately gates internal clock and reduces IZZ to 70 µA - no timing handshake required |
| Byte-selectable write | Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with real-time latency constraints. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controllers and traffic managers. Use Value: 8.5 ns tCD and flow-through outputs meet sub-10 ns round-trip timing budgets for 10 Gbps packet processing. | Use Scenario: Frame buffering in optical transport equipment (OTN, SONET) requiring deterministic burst reads. IC Role / Device Role / Timing Role: Synchronous memory subsystem supporting burst-mode DMA transfers from framer ASICs. Use Value: Interleaved burst mode (LBO = HIGH) aligns with framer's address stride pattern, improving effective bandwidth by 25%. |
| Radar Signal Processing Buffer | Industrial PLC Data Cache |
Use Scenario: Temporary storage of digitized ADC samples in phased-array radar front-ends operating at 87 MHz. IC Role / Device Role / Timing Role: Low-jitter, clock-synchronous memory for time-critical sample buffering prior to FFT computation. Use Value: Industrial temperature range (–40°C to +85°C) and 70 µA sleep current support uncooled outdoor deployment. | Use Scenario: Real-time I/O mapping and tag history cache in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Non-volatile shadow RAM replacement for fast, reliable state retention during power transitions. Use Value: Single-cycle deselect and guaranteed data retention in ZZ sleep mode ensure zero-cycle recovery after brownout events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-85BGXI | 256K × 36-bit, 85 MHz, 119-ball BGA; no LBO pin - fixed interleaved burst only | Requires PCB redesign (BGA vs. TQFP); lacks linear burst option for legacy controller compatibility | Select when board space is constrained and burst order is fixed; verify ADV timing compatibility |
| AS7C3256A-85JCIN | 256K × 36-bit, 85 MHz, 100-pin TQFP; no flow-through output - registered outputs add 3 ns delay | Same footprint but higher tCD (11.5 ns); incompatible with strict sub-10 ns timing paths | Select only if system timing margin > 3 ns; avoid in packet buffer or radar applications |
Compared with CY7C1371BV33-85BGXI and AS7C3256A-85JCIN, the 71V67703S85PFG8 uniquely delivers 8.5 ns flow-through access in a 100-pin TQFP with configurable burst order - critical for legacy controller interoperability and thermal-constrained industrial deployments.
Availability
71V67703S85PFG8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, and radar signal processing systems requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S85PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for infrastructure and industrial markets.
The 71V67703S85PFG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency memory subsystems in telecom, networking, and defense electronics where flow-through timing and industrial reliability are mandatory.
FAQ
What is the maximum clock frequency supported by the 71V67703S85PFG8?
The 71V67703S85PFG8 supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification (tCD ≤ 8.5 ns). This is validated across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. Operation above 87 MHz violates AC timing parameters and is not guaranteed.
Does the 71V67703S85PFG8 support both linear and interleaved burst modes?
Yes, the 71V67703S85PFG8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) input pin. When LBO = LOW, linear burst sequence is selected; when LBO = HIGH, interleaved burst sequence is used. LBO is a static input and must remain stable during device operation.
What is the function of the ZZ pin on the 71V67703S85PFG8?
The ZZ pin on the 71V67703S85PFG8 is an asynchronous sleep mode input. When ZZ = HIGH, the device enters full sleep mode, gating the internal clock and reducing supply current to 70 µA (industrial grade) while retaining memory contents. Recovery requires ZZ = LOW followed by tZZR ≥ 100 ns before valid accesses resume.
How many address bits does the 71V67703S85PFG8 require for 256K × 36 operation?
The 71V67703S85PFG8 requires 18 address bits (A0–A17) for 256K × 36 operation. A18 is NC in this configuration but becomes functional for 512K × 18 mode. Address registration is synchronous, triggered by rising CLK edge combined with ADSP or ADSC assertion.
Is the 71V67703S85PFG8 pin-compatible with other devices in the IDT71V67xxx family?
The 71V67703S85PFG8 shares the same 100-pin TQFP package and core pinout with IDT71V67903, but differs in A18 and BW3/BW4 functionality: A18 is NC on 71V67703S85PFG8 (used only on 71V67903), and BW3/BW4 are fully functional on 71V67703S85PFG8 but not applicable on 71V67903 per datasheet note.
71V67703S85PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67703S85PFG8 FAQ
1.How can I place an order for 71V67703S85PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85PFG8 reliable?
The price and inventory of 71V67703S85PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85PFG8 is usually 5 days.
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5.How can I obtain technical support or documentation for 71V67703S85PFG8?
For technical support, including 71V67703S85PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85PFG8 requirements.
6.How does Aetrix verify that 71V67703S85PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S85PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85PFG8 meets industry standards.
7.What is the process for return or replacement of 71V67703S85PFG8?
All 71V67703S85PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85PFG8 part is unused and in its original packaging.
Return procedure for 71V67703S85PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85PFG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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