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Renesas 71V67703S85PFGI
- Part No.:
- 71V67703S85PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67703S85PFGI.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,605
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Product details
Overview
71V67703S85PFGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and 8.5ns access time at up to 87MHz clock frequency. It supports linear/interleaved burst modes via LBO input, self-timed write with global/byte write control, and industrial-grade operation (–40°C to +85°C). Used in high-bandwidth packet buffering and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67703S85PFGI datasheet, 71V67703S85PFGI pinout, 71V67703S85PFGI application, or 71V67703S85PFGI equivalent, key selection criteria include burst address sequencing behavior, flow-through vs. registered output architecture, ZZ-controlled sleep mode current (≤70mA), and TQFP-100 package compatibility with legacy memory bus layouts.
Technical Context
This SRAM implements a synchronous, clock-driven interface with separate ADSP/ADSC address status inputs for processor/cache controller coordination. The internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO pin state - no reconfiguration during active burst.
Write operations are fully synchronous and support four granular modes: global write (GW), byte write enable (BWE) with BW1–BW4, or combinations thereof. Output path is flow-through (no output register), enabling clock-to-data delay ≤8.5ns with zero additional latency beyond tCD specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via address remapping |
| Access Time / Max Frequency | 8.5ns access time; supports up to 87MHz clock frequency with guaranteed timing margins |
| Supply Voltages | VDD = 3.3V ±5% (core); VDDQ = 3.3V ±5% (I/O); independent power domains |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change |
| Power Management | ZZ input enables full sleep mode; IZZ ≤70mA (industrial temp); data retention maintained |
| Operating Temperature | –40°C to +85°C industrial grade; validated across full voltage and frequency range |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm footprint |
Pinout & Package
71V67703S85PFGI is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67703" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching triggered by rising CLK edge + ADSP/ADSC LOW; A17/A18 used only in 512K×18 mode |
| CLK | Clock Input | Primary timing reference; all synchronous inputs referenced to rising edge; no internal clock division |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; both active LOW, gated by CE |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Linear/Interleaved Burst Order | Static DC input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1 controls I/O0–7+I/OP1, etc.; any active BWx disables outputs |
| OE | Output Enable | Asynchronous control; LOW enables flow-through outputs; HIGH forces high-Z regardless of chip select state |
| ZZ | Sleep Mode | Asynchronous HIGH input gates internal CLK and reduces ICC to ≤70mA; data retention guaranteed |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; input path registered, output path flow-through (no register) |
| VDD / VDDQ / VSS | Power Supplies | VDD (3.3V core), VDDQ (3.3V I/O), VSS (ground); multiple dedicated pins per supply for low-noise routing |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay; enables tCD = 8.5ns with zero added latency for real-time read response |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle; critical for burst termination and bus arbitration in multi-master systems |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation; simplifies controller design |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing matches CPU/cache line fetch patterns without firmware overhead |
| Independent core/I/O supplies | VDD/VDDQ separation allows mixed-voltage system integration and reduces switching noise coupling to core logic |
| Industrial temperature support | Full AC/DC specs guaranteed from –40°C to +85°C; qualified for telecom infrastructure and industrial control applications |
Applications
| Network Packet Buffering | High-Speed Cache Subsystem |
|---|---|
Use Scenario: Line-rate buffering of Ethernet frames in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Primary burst-accessed SRAM for ingress/egress FIFOs; accepts 4-word bursts per address cycle via ADV/LBO. Use Value: 8.5ns tCD and flow-through outputs ensure sub-10ns read turnaround, meeting 10Gbps MAC timing constraints without pipeline stalls. |
Use Scenario: Secondary cache tag/data storage in FPGA-based soft-core processors with custom memory controllers. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfaced directly to AXI or Wishbone bus; uses ADSP/ADSC for precise address capture timing. Use Value: Single-cycle deselect and deterministic tCD allow tight coupling with pipelined CPU fetch units, eliminating bubble cycles during cache line fills. |
| Telecom Baseband Processing | Industrial Motion Control Buffer |
Use Scenario: Real-time symbol buffering in LTE/5G baseband ASICs where deterministic latency is mandatory for FFT/IFFT pipelines. IC Role / Device Role / Timing Role: Low-jitter, clock-synchronous memory for DMA-accessed coefficient tables and intermediate result storage. Use Value: ZZ sleep mode reduces idle power to ≤70mA while preserving data - critical for fanless outdoor radio units with thermal constraints. |
Use Scenario: Servo loop data exchange between DSP and FPGA in CNC machine controllers requiring microsecond-level jitter control. IC Role / Device Role / Timing Role: Deterministic-access SRAM for position/velocity history buffers; uses GW/BWE for atomic multi-byte updates without bus contention. Use Value: Industrial temp rating (–40°C to +85°C) and 3.3V tolerance ensure reliable operation in unconditioned factory environments with wide ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18-bit organization; 7.5ns access; QDR-II+ interface with separate read/write ports | Targeted at dual-port buffer applications (e.g., network switch crossbar); not pin-compatible | Select when true dual-port bandwidth > single-port burst throughput is required; requires PCB redesign. |
| AS7C33128PFSIG | 256K × 36-bit; 10ns access; asynchronous interface; no burst or clock inputs | Used in legacy ISA/PCI systems without synchronous timing constraints; lacks ADV/LBO/ZZ features | Choose for cost-sensitive, non-burst, non-low-power designs where clock domain isolation is unnecessary. |
Compared with CY7C1373KV18 and AS7C33128PFSIG, the 71V67703S85PFGI uniquely delivers 256K×36 burst capability with flow-through latency, industrial temp support, and hardware-configurable burst order - making it optimal for new designs prioritizing deterministic timing over raw bandwidth or legacy compatibility.
Availability
71V67703S85PFGI is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache subsystems, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V67703S85PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded processing solutions for communications, computing, and industrial markets.
The 71V67703S85PFGI belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and robust operation in telecom infrastructure and real-time embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V67703S85PFGI?
The 71V67703S85PFGI supports up to 87MHz clock frequency, corresponding to its 8.5ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. Operation above 87MHz violates tCYC minimum (11.5ns) and risks timing violations in setup/hold windows.
Does the 71V67703S85PFGI support both linear and interleaved burst modes?
Yes, the 71V67703S85PFGI supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, linear addressing (00→01→10→11) is used; when LBO = HIGH, interleaved addressing (00→01→11→10) is selected. LBO is a static input and must not change during active burst operation.
How does the flow-through output architecture of the 71V67703S85PFGI affect system timing?
The 71V67703S85PFGI's flow-through output path eliminates output register latency, delivering valid data within tCD = 8.5ns after the rising CLK edge. This enables immediate use by downstream logic without pipeline staging, reducing total read cycle time by up to one clock period compared to registered-output SRAMs.
What is the role of the ZZ pin on the 71V67703S85PFGI, and what power savings does it provide?
The ZZ pin on the 71V67703S85PFGI enables full sleep mode when driven HIGH. In this state, internal clock gating reduces supply current to ≤70mA (industrial grade) while guaranteeing data retention. This is critical for power-constrained applications like fanless telecom gear where standby power must be minimized without losing volatile memory contents.
Is the 71V67703S85PFGI pin-compatible with other members of the 71V67703/71V67903 family?
The 71V67703S85PFGI is pin-compatible with other speed grades (e.g., 71V67703S75PFGI, 71V67703S80PFGI) in the same TQFP-100 package. However, it is not pin-compatible with the 71V67903 (512K×18 variant) due to differing address pin usage (A17/A18 vs. NC) and byte-write pin allocation (BW3/BW4 present in 71V67703, not used in 71V67903).
71V67703S85PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67703S85PFGI FAQ
1.How can I place an order for 71V67703S85PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S85PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S85PFGI reliable?
The price and inventory of 71V67703S85PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S85PFGI is usually 5 days.
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71V67703S85PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S85PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S85PFGI?
For technical support, including 71V67703S85PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S85PFGI requirements.
6.How does Aetrix verify that 71V67703S85PFGI is sourced from the original manufacturer or authorized distributors?
All 71V67703S85PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S85PFGI meets industry standards.
7.What is the process for return or replacement of 71V67703S85PFGI?
All 71V67703S85PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S85PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S85PFGI part is unused and in its original packaging.
Return procedure for 71V67703S85PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S85PFGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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