Renesas 71V67703S85PFGI8

Overview

71V67703S85PFGI8 from IDT (now Renesas) is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and features self-timed write with global and byte-level write control - used in high-bandwidth packet buffering and cache subsystems of telecom line cards.

For engineers reviewing the 71V67703S85PFGI8 datasheet, 71V67703S85PFGI8 pinout, 71V67703S85PFGI8 application, or 71V67703S85PFGI8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), 100-pin TQFP package compatibility, flow-through output timing, ZZ sleep-mode power management, and 3.3V core/I/O supply compliance.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path. Its internal burst counter advances on ADV assertion and selects sequence order via LBO pin - linear (LBO = LOW) or interleaved (LBO = HIGH) - enabling four-word burst reads per address cycle.

Write operations support multiple modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4), all synchronized to CLK rising edge. Power-down is controlled asynchronously by ZZ input, gating internal clock and reducing current to ≤70 mA in full sleep mode.

Key Specifications

Pinout & Package

71V67703S85PFGI8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad for thermal dissipation. Pin 1 marked by dot; pin numbering follows standard counter-clockwise convention from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C36256PFSIG, the 71V67703S85PFGI8 uniquely delivers 256K×36 organization in TQFP with configurable burst sequencing and flow-through timing - enabling drop-in replacement in IDT-based telecom platforms without layout or firmware changes.

Availability

71V67703S85PFGI8 is available at Aetrix Electronics and suitable for packet buffering, network processor cache, and industrial data logging requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V67703S85PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for infrastructure and industrial markets.

The 71V67703S85PFGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic, low-latency data buffering in telecom, networking, and real-time control systems.

FAQ

What is the maximum clock frequency supported by the 71V67703S85PFGI8?

The 71V67703S85PFGI8 supports up to 87 MHz clock frequency, corresponding to its 8.5 ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135 V). The device maintains timing compliance without derating when operated within recommended DC conditions.

Does the 71V67703S85PFGI8 support both linear and interleaved burst modes?

Yes, the 71V67703S85PFGI8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, it selects linear burst order (00→01→10→11); when HIGH, it selects interleaved order (00→01→11→10). LBO is a static DC input and must remain stable during burst operation.

How does the flow-through output architecture benefit system timing in the 71V67703S85PFGI8?

The flow-through output architecture in the 71V67703S85PFGI8 eliminates output register delay, delivering valid data within tCD ≤8.5 ns after the CLK rising edge. This enables zero-wait-state interfacing with high-speed processors and ASICs, reducing overall memory access latency by up to 3 ns compared to registered-output SRAMs.

What is the function of the ZZ pin on the 71V67703S85PFGI8?

The ZZ pin on the 71V67703S85PFGI8 is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70 mA (industrial grade) while retaining full data integrity. Recovery time (tZZR) is 100 ns, and no external reset or reconfiguration is needed upon wake-up.

Can the 71V67703S85PFGI8 be used in both 256K×36 and 512K×18 configurations?

Yes, the 71V67703S85PFGI8 is configurable as either 256K × 36-bit or 512K × 18-bit. Address mapping differs: A0–A17 are used for 256K×36 mode, while A0–A18 are used for 512K×18. Pin functions remain identical; only address decoding logic changes - no hardware modification is required to switch modes.