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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67803S133BG

Name: 71V67803S133BG
Brand: Renesas
SKU: 71V67803S133BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67803S133BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67803S133BG.pdf

Description:: IC SRAM 9MBIT PARALLEL 119PBGA

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Product details

Overview

71V67803S133BG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed cache or buffer memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67803S133BG datasheet, 71V67803S133BG pinout, 71V67803S133BG application, or 71V67803S133BG equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), 100-pin TQFP package compatibility, and absence of BW3/BW4 pins per device-specific pinout.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing determined by LBO state-linear (LBO=LOW) or interleaved (LBO=HIGH).

The device uses separate 3.3V core (VDD) and I/O (VDDQ) supplies, includes asynchronous ZZ sleep enable and OE output control, and delivers pipelined read outputs with tCD = 4.2ns at 133MHz. Write cycles are self-timed and support both global (GW) and byte-select (BW1–BW2) activation, with BWE gating byte enables.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit); configured for 18-bit data bus width with A0–A18 addressing.
Max Clock Frequency	133MHz - guarantees 7.5ns clock cycle time and 4.2ns clock-to-data (tCD) for timing-critical burst reads.
Access Time	4.2ns clock access time - defines minimum clock period for reliable read data valid after CLK rise.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - requires dual regulated 3.3V rails with independent decoupling.
Sleep Current (IZZ)	≤70mA at VDD = max - enables low-power idle states in telecom systems without external power gating.
Burst Mode Control	LBO pin selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst sequence - critical for cache line alignment with processor bus protocols.
Write Enable Logic	GW (global) and BWE + BW1/BW2 (byte) - allows full-word or 9-bit sub-word writes; BW3/BW4 not implemented per datasheet note.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated for 512K × 18 configuration per PKG100 drawing (document page 6).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A18 fully utilized for 512K × 18 addressing.
CLK	Clock Input	Primary timing reference; all synchronous operations (read/write/burst advance) referenced to rising edge.
GW, BWE, BW1, BW2	Write Control Inputs	GW enables full 18-bit write; BWE enables byte write logic; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - BW3/BW4 not connected per datasheet note.
ADV, ADSP, ADSC	Burst & Address Status	ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously - determines burst initiation source.
LBO	Burst Order Select	Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10) - must remain stable during operation.
ZZ	Sleep Mode Enable	Asynchronous HIGH activates full sleep mode, gating internal CLK and reducing supply current to ≤70mA - no clock required for entry/exit.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus + 2 parity bits; registered input/output paths synchronized to CLK; high-impedance when OE=HIGH or device deselected.
VDD, VDDQ, VSS	Power & Ground	VDD (3.3V core), VDDQ (3.3V I/O), VSS (common ground) - require separate low-ESR decoupling per JEDEC TQFP layout guidelines.

Key Features

Feature	Design Value
Pipelined Outputs	Read data appears one clock cycle after address latch; enables continuous burst streaming without pipeline stalls in 133MHz systems.
Single-Cycle Deselect	Device enters high-Z output state within one CLK cycle of chip disable (CE/CS0/CS1 deassertion) - eliminates bus contention in multi-SRAM systems.
Self-Timed Write Cycle	Internal timing logic completes write without external wait-state generation; simplifies interface to FPGA or ASIC controllers lacking write-strobe handshaking.
Linear/Interleaved Burst Modes	LBO pin configures burst address sequence to match processor cache line ordering (e.g., PowerPC linear vs. x86 interleaved), ensuring optimal bandwidth utilization.
Industrial Temperature Range	Rated for –40°C to +85°C operation - qualified for base station RF modules, industrial PLCs, and transportation control units requiring extended thermal reliability.

Applications

Network Packet Buffer	Telecom Line Card Cache
Use Scenario: Storing ingress/egress packet headers and metadata in 10Gbps Ethernet switch ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to SerDes MAC logic with 133MHz burst reads. Use Value: Pipelined outputs and single-cycle deselect prevent FIFO underflow/overflow during traffic bursts while maintaining deterministic 4.2ns read latency.	Use Scenario: Serving as L2 cache for DSP-based voice processing in VoIP gateway line cards. IC Role / Device Role / Timing Role: Synchronous burst memory aligned to DSP's EMIF with linear burst order matching cache line fetch patterns. Use Value: 512K × 18 organization provides 9Mbit capacity per device; industrial temp rating ensures reliability in uncooled chassis environments.
Baseband Processor Buffer	Radar Signal Processing FIFO
Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE femtocell baseband ICs. IC Role / Device Role / Timing Role: Low-power synchronous SRAM with ZZ sleep mode activated between symbol processing intervals. Use Value: Sleep current ≤70mA reduces average power in duty-cycled radar subsystems without requiring external power sequencing.	Use Scenario: Real-time buffering of ADC samples in phased-array radar front-end modules operating at 125+ MSPS. IC Role / Device Role / Timing Role: High-speed burst-access memory supporting 133MHz clocking with precise tCD = 4.2ns timing margin. Use Value: 100-pin TQFP footprint enables dense PCB layout; separate VDD/VDDQ rails minimize switching noise coupling into analog signal chains.

Network Packet Buffer

Telecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10Gbps Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to SerDes MAC logic with 133MHz burst reads.

Use Value: Pipelined outputs and single-cycle deselect prevent FIFO underflow/overflow during traffic bursts while maintaining deterministic 4.2ns read latency.

Use Scenario: Serving as L2 cache for DSP-based voice processing in VoIP gateway line cards.

IC Role / Device Role / Timing Role: Synchronous burst memory aligned to DSP's EMIF with linear burst order matching cache line fetch patterns.

Use Value: 512K × 18 organization provides 9Mbit capacity per device; industrial temp rating ensures reliability in uncooled chassis environments.

Baseband Processor Buffer

Radar Signal Processing FIFO

Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE femtocell baseband ICs.

IC Role / Device Role / Timing Role: Low-power synchronous SRAM with ZZ sleep mode activated between symbol processing intervals.

Use Value: Sleep current ≤70mA reduces average power in duty-cycled radar subsystems without requiring external power sequencing.

Use Scenario: Real-time buffering of ADC samples in phased-array radar front-end modules operating at 125+ MSPS.

IC Role / Device Role / Timing Role: High-speed burst-access memory supporting 133MHz clocking with precise tCD = 4.2ns timing margin.

Use Value: 100-pin TQFP footprint enables dense PCB layout; separate VDD/VDDQ rails minimize switching noise coupling into analog signal chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-133BZXI	512K × 18, 133MHz, same 100-pin TQFP, but uses single 3.3V supply (no VDDQ separation) and lacks LBO burst-order select.	Requires simplified power design but cannot match 71V67803S133BG's processor-aligned burst sequencing in cache applications.	Select when VDD/VDDQ separation is unnecessary and burst order is fixed by system controller.
AS7C35128P-133BIN	512K × 18, 133MHz, 100-pin TQFP, supports linear burst only (no LBO pin), higher ISB1 standby current (100mA vs. 70mA).	Valid for non-cache buffers where interleaved burst is unused, but less suitable for low-power industrial deployments.	Choose for cost-sensitive designs where burst flexibility and ultra-low sleep current are secondary to unit price.

Compared with CY7C1371DV33-133BZXI and AS7C35128P-133BIN, the 71V67803S133BG uniquely delivers dual-supply isolation, programmable burst order, and lowest industrial-grade sleep current - making it optimal for thermally constrained, protocol-aware memory subsystems.

Availability

71V67803S133BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband processor buffering, radar signal processing FIFOs, and industrial PLC memory expansion requiring stable component supply and long-term lifecycle support.

Supply support for 71V67803S133BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67803S133BG belongs to IDT's 71V67xxx family of pipelined synchronous SRAMs, designed specifically for low-latency, burst-oriented memory subsystems in networking and signal processing equipment.

FAQ

What is the maximum supported clock frequency for the 71V67803S133BG?

The 71V67803S133BG is rated for 133MHz operation, corresponding to a 7.5ns clock cycle time and 4.2ns clock-to-data (tCD) specification. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3V ±5%. Higher speeds (150MHz/166MHz) apply only to commercial-grade variants and are not valid for this part number.

Does the 71V67803S133BG support both linear and interleaved burst modes?

Yes, the 71V67803S133BG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). The LBO pin is asynchronous and must remain static during active operation - changing it mid-burst may cause undefined address sequencing.

Are BW3 and BW4 pins functional on the 71V67803S133BG?

No, BW3 and BW4 are not applicable to the 71V67803S133BG. As explicitly stated in the datasheet (Note 1, Pin Definitions table), these pins are omitted for the 512K × 18 configuration. Only BW1 and BW2 are implemented - BW1 controls I/O0–I/O8/I/OP1 (first 9-bit byte), and BW2 controls I/O9–I/O17/I/OP2 (second 9-bit byte).

What is the purpose of the ZZ pin on the 71V67803S133BG?

The ZZ pin on the 71V67803S133BG enables full sleep mode: when driven HIGH, it internally gates the clock and reduces supply current to ≤70mA (industrial grade). Data retention is guaranteed during sleep. ZZ is asynchronous, requires no clock synchronization, and does not affect address/data registers - the device resumes normal operation immediately upon ZZ returning LOW.

Which package type is used for the 71V67803S133BG?

The 71V67803S133BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14mm × 20mm body size and 0.5mm lead pitch. This is confirmed in the "Pin Configuration – 512K x 18, PKG100" diagram (page 6 of the datasheet) and distinguishes it from BGA variants (e.g., BG119 or BQ165) which carry different suffixes.

71V67803S133BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67803S133BG FAQ

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The price and inventory of 71V67803S133BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S133BG is usually 5 days.

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6.How does Aetrix verify that 71V67803S133BG is sourced from the original manufacturer or authorized distributors?

All 71V67803S133BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S133BG meets industry standards.

7.What is the process for return or replacement of 71V67803S133BG?

All 71V67803S133BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S133BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67803S133BG part is unused and in its original packaging.

Return procedure for 71V67803S133BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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