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Renesas 71V67803S133BG8
- Part No.:
- 71V67803S133BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67803S133BG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,397
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Product details
Overview
71V67803S133BG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It supports 133MHz clock frequency with 4.2ns clock-to-data access time, operates at 3.3V core and I/O supplies, and features asynchronous sleep mode via ZZ input for low-power standby.
For engineers reviewing the 71V67803S133BG8 datasheet, 71V67803S133BG8 pinout, 71V67803S133BG8 application, or 71V67803S133BG8 equivalent, key selection criteria include burst-order control (LBO), byte-write enable (BWE/BW1–BW2), self-timed write architecture, and JEDEC-standard 100-pin TQFP packaging with verified commercial temperature range support.
Technical Context
This SRAM implements a synchronous, clock-driven interface with pipelined output registers that deliver data one cycle after the rising CLK edge. Its internal burst address counter advances on ADV=LOW and supports both linear and interleaved sequences selected by the LBO pin - though BW3 and BW4 are not applicable to the 71V67803 variant.
The device integrates dedicated write registers, address status inputs (ADSP/ADSC), and dual chip-select logic (CS0 active-HIGH, CS1 active-LOW) enabling flexible memory mapping in cache-coherent or processor-centric systems. Power management includes CMOS standby (ISB1), clock-running standby (ISB2), and full-sleep mode (IZZ ≤ 70mA) triggered asynchronously by ZZ HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit), configured as 18-bit wide data bus with A0–A18 addressing |
| Clock Frequency Support | 133MHz maximum - enables 7.5ns clock cycle time for high-throughput burst reads/writes |
| Access Time (tCD) | 4.2ns max - defines minimum latency from CLK rising edge to valid output data under 133MHz operation |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - requires separate low-noise 3.3V rails |
| Power Consumption | IDD = 260mA max (133MHz, commercial temp), IZZ = 50–70mA (full sleep) - critical for thermal budgeting |
| Burst Control | LBO pin selects linear vs. interleaved burst order; ADV=LOW initiates/advances burst counter |
| Write Architecture | Self-timed write with global (GW) and byte-level (BWE + BW1/BW2) control - no external write pulse needed |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant. Pinout validated per IDT71V67803 PKG100 configuration for 512K × 18 mode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latch triggered by CLK + ADSP/ADSC; A0–A18 fully utilized for 512K × 18 addressing |
| CLK | System Clock Input | Single-ended clock reference for all synchronous operations; timing-critical path with tCH/tCL min 3ns |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW + CS0=HIGH + CS1=LOW enables device; supports multi-chip memory banks |
| GW, BWE, BW1, BW2 | Write Control Inputs | GW writes all 18-bit data; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| ADV, ADSP, ADSC | Burst & Address Status | ADSP (processor) or ADSC (cache) loads address register; ADV=LOW advances internal burst counter |
| LBO | Burst Order Select | Asynchronous static input: LBO=LOW → linear burst; LBO=HIGH → interleaved burst; must remain stable during operation |
| OE | Output Enable | Asynchronous control: OE=LOW enables I/O drivers; OE=HIGH forces high-Z regardless of clock or select state |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces current to IZZ ≤ 70mA; retains data during sleep |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; registered I/O paths synchronized to CLK rising edge |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS pins require local decoupling; VDDQ must track VDD within ±5% |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | Delivers first burst word one clock cycle after address load - eliminates wait states in high-speed CPU interfaces |
| Single-Cycle Deselect | Device enters high-Z output state within one CLK cycle after CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Self-Timed Write Cycle | Internal timing logic completes write without external strobes - simplifies controller design and improves timing margin |
| Linear/Interleaved Burst Modes | LBO pin configures burst address sequence to match processor cache line ordering - avoids software remapping overhead |
| Asynchronous Sleep Mode (ZZ) | Reduces supply current to ≤70mA while retaining memory contents - enables low-power idle states in embedded systems |
| Byte-Write Capability | BW1/BW2 enable independent 9-bit writes to upper/lower data halves - supports efficient partial-word updates without read-modify-write |
Applications
| Cache Memory Subsystem | High-Speed Data Buffer |
|---|---|
Use Scenario: L2/L3 cache tag/data storage in RISC-based networking processors requiring deterministic 133MHz burst access. IC Role / Device Role / Timing Role: Synchronous SRAM providing pipelined 4-word burst reads aligned to processor cache line size (64B). Use Value: 4.2ns tCD and single-cycle deselect eliminate pipeline stalls during cache fills and reduce average memory latency by ≥35% vs. asynchronous SRAM. |
Use Scenario: Real-time packet buffering in 10G Ethernet line cards where burst writes absorb variable-length frame payloads without CPU intervention. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer supporting concurrent 133MHz read/write bursts with byte-select granularity. Use Value: Self-timed write and BWE/BW1/BW2 enable atomic 9-bit updates - prevents corruption during partial-frame writes in cut-through switching. |
| Industrial PLC Motion Controller | Test Equipment Pattern Memory |
Use Scenario: Deterministic I/O mapping and motion trajectory storage in servo drive controllers operating across -40°C to +85°C industrial range. IC Role / Device Role / Timing Role: Temperature-rated synchronous SRAM delivering guaranteed 133MHz performance with ZZ-controlled sleep during idle cycles. Use Value: IZZ ≤ 70mA sleep current extends system uptime in fanless enclosures; LBO-configurable burst matches encoder interpolation algorithms. |
Use Scenario: Vector pattern storage in automated test equipment (ATE) requiring precise 133MHz stimulus/response timing with zero jitter accumulation. IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM serving as deterministic pattern memory with tCD = 4.2ns and tCDC = 1.5ns data change stability. Use Value: Pipelined outputs and clock-synchronized I/O eliminate setup/hold violations at 133MHz - ensures bit-accurate pattern replay across 10k+ vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-133BZI | 133MHz 512K×18 QDR SRAM with differential clocks and separate read/write ports; higher power (IDD = 380mA) | Targeted at QDR-protocol systems requiring simultaneous read/write; incompatible pinout and control logic | Select only if QDR interface and dual-port operation are required; not drop-in compatible |
| AS7C35128P-133JCIN | 133MHz 512K×18 async SRAM with no burst, pipelining, or ZZ sleep; simpler control but higher access latency (tAA = 10ns) | Suitable for non-burst, non-pipelined legacy designs; lacks ADV/ADSP/ADSC and burst address counter | Choose when cost sensitivity outweighs performance; requires redesign for burst/pipeline timing paths |
Compared with CY7C1315KV18-133BZI and AS7C35128P-133JCIN, the 71V67803S133BG8 uniquely delivers pipelined burst reads, single-cycle deselect, and asynchronous sleep in a standard synchronous SRAM interface - enabling lower latency and lower power in cache and buffer roles without QDR complexity or async timing penalties.
Availability
71V67803S133BG8 is available at Aetrix Electronics and suitable for high-speed cache subsystems, real-time data buffers, industrial motion controllers, and ATE pattern memory applications requiring stable component supply across commercial and industrial temperature ranges.
Supply support for 71V67803S133BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.
The 71V67803S133BG8 belongs to IDT's 71V67xxx family of pipelined synchronous SRAMs designed specifically for cache and buffer applications demanding sub-5ns access, burst efficiency, and low-power sleep modes in 3.3V systems.
FAQ
What is the maximum supported clock frequency for the 71V67803S133BG8?
The 71V67803S133BG8 is rated for 133MHz operation with a guaranteed 7.5ns clock cycle time (tCYC). At this frequency, it achieves 4.2ns clock-to-data access time (tCD) and supports pipelined burst reads. While the datasheet notes 150MHz and 166MHz variants exist in the same family (e.g., 71V67803S150/166), the 71V67803S133BG8 is specifically characterized and warranted for 133MHz maximum.
Does the 71V67803S133BG8 support both 256K × 36 and 512K × 18 configurations?
No - the 71V67803S133BG8 is exclusively a 512K × 18-bit device. Although the broader 71V67603/71V67803 family includes both configurations, the 71V67803 variant (including 71V67803S133BG8) is defined for 512K × 18 organization. Its pinout omits BW3/BW4 and reassigns several address pins (e.g., A10–A18 used fully), confirming the 512K × 18 mapping per official IDT documentation.
How does the LBO pin affect burst behavior in the 71V67803S133BG8?
The LBO (Linear Burst Order) pin selects between two burst address sequences: LBO=LOW enables linear burst (00→01→10→11), while LBO=HIGH enables interleaved burst (00→01→11→10). This setting is sampled asynchronously and must remain static during operation. The 71V67803S133BG8 uses A0/A1 to generate the four-word burst, and the selected sequence directly maps to processor cache line addressing requirements.
What is the function of the ZZ pin on the 71V67803S133BG8?
The ZZ pin provides asynchronous entry into full-sleep mode: when driven HIGH, it internally gates the CLK signal and reduces supply current to IZZ ≤ 70mA (industrial temp) while retaining all stored data. ZZ is internally pulled to VSS if left unconnected, ensuring active mode by default. Recovery requires tZZR ≥ 100ns after ZZ returns LOW before valid accesses resume.
Which byte-write signals are active on the 71V67803S133BG8?
The 71V67803S133BG8 supports BW1 and BW2 only - controlling the lower 9-bit (I/O0–I/O8, I/OP1) and upper 9-bit (I/O9–I/O17, I/OP2) portions of the 18-bit data bus. BW3 and BW4 are explicitly stated as "not applicable" for the 71V67803 variant in the datasheet, distinguishing it from the 71V67603 which supports all four byte enables for 36-bit operation.
71V67803S133BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67803S133BG8 FAQ
1.How can I place an order for 71V67803S133BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S133BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S133BG8 reliable?
The price and inventory of 71V67803S133BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S133BG8 is usually 5 days.
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71V67803S133BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67803S133BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67803S133BG8?
For technical support, including 71V67803S133BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S133BG8 requirements.
6.How does Aetrix verify that 71V67803S133BG8 is sourced from the original manufacturer or authorized distributors?
All 71V67803S133BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S133BG8 meets industry standards.
7.What is the process for return or replacement of 71V67803S133BG8?
All 71V67803S133BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S133BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S133BG8 part is unused and in its original packaging.
Return procedure for 71V67803S133BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S133BG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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