Renesas 71V67803S133BGG

Overview

71V67803S133BGG from IDT (Integrated Device Technology) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst counter architecture. It operates at 133MHz with 4.2ns clock access time, supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enable (BWE), and sleep mode (ZZ) for low-power embedded memory buffering in high-speed networking line cards.

For engineers reviewing the 71V67803S133BGG datasheet, 71V67803S133BGG pinout, 71V67803S133BGG application, or 71V67803S133BGG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility with FPGA/ASIC interfaces, TQFP-100 package footprint constraints, and industrial temperature support (–40°C to +85°C) for telecom infrastructure designs.

Technical Context

The 71V67803S133BGG implements a synchronous, clock-driven interface with ADSP/ADSC address status inputs enabling processor- or cache-controller-initiated burst reads. Its internal 2-bit binary burst counter advances on ADV=LOW and selects address sequence per LBO state-linear (LBO=LOW) or interleaved (LBO=HIGH)-with wraparound behavior after four cycles.

Write operations are self-timed and support multiple configurations: global write (GW active), byte-selectable writes (BWE + BW1–BW2 only; BW3/BW4 not applicable per datasheet note), and asynchronous sleep entry via ZZ=HIGH. Pipelined output registers deliver data one clock cycle after CLK rising edge, while single-cycle deselect ensures rapid bus release without latency penalties.

Key Specifications

Pinout & Package

71V67803S133BGG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout follows PKG100 configuration for 512K × 18 organization (per datasheet Figure 6.42-6), with dedicated address (A0–A18), control (CE, CS0, CS1, GW, BWE, ADV, ADSP, ADSC, OE, LBO, ZZ), and bidirectional data (I/O0–I/O15, I/OP1–I/OP2) terminals. NC pins are explicitly defined and must remain unconnected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-133AXC and AS7C35128P-133JCIN, the 71V67803S133BGG delivers deterministic burst performance via dedicated ADV/LBO hardware, reduces FPGA logic utilization by offloading address generation, and supports cache-coherent systems through ADSC - making it optimal for high-throughput, low-latency infrastructure designs.

Availability

71V67803S133BGG is available at Aetrix Electronics and suitable for base station packet buffering, industrial PLC data logging, and network switch lookup table caching requiring stable component supply across extended product lifecycles.

Supply support for 71V67803S133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, acquired by Renesas Electronics in 2019.

The 71V67803S133BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory buffering in telecom infrastructure, industrial control, and medical imaging systems demanding industrial temperature reliability.

FAQ

What memory organization does the 71V67803S133BGG support?

The 71V67803S133BGG is organized as 512K × 18 bits (9Mbit total), providing an 18-bit data bus width optimized for FPGA and ASIC interfaces requiring efficient word-aligned access. It does not support the 256K × 36 configuration - that variant is implemented in the 71V67603 family member, not the 71V67803S133BGG.

Does the 71V67803S133BGG support both linear and interleaved burst modes?

Yes, the 71V67803S133BGG supports both burst modes via the LBO (Linear Burst Order) input pin: LBO=LOW selects linear addressing (00→01→10→11), while LBO=HIGH selects interleaved (00→01→11→10). This hardware-configurable mode allows direct alignment with CPU cache-line mapping schemes without software overhead.

What is the function of the ADV pin on the 71V67803S133BGG?

The ADV (Burst Address Advance) pin on the 71V67803S133BGG is a synchronous input that controls the internal 2-bit burst counter. When ADV=LOW on the rising CLK edge, the counter increments to generate the next burst address; when ADV=HIGH, the counter holds, suspending burst progression - enabling precise control over multi-cycle data transfers.

Which byte write enables are active on the 71V67803S133BGG?

The 71V67803S133BGG supports BW1 and BW2 for byte-level write control (BW1: I/O0–I/O8, I/OP1; BW2: I/O9–I/O15, I/OP2), as confirmed in the datasheet note stating "BW3 and BW4 are not applicable for the IDT71V67803." BWE must be LOW to enable BW1/BW2 functionality; otherwise, only GW is active.

What package type and pin count does the 71V67803S133BGG use?

The 71V67803S133BGG uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package (PKG100), measuring 14mm × 20mm with 0.5mm lead pitch. This package is explicitly documented for the 512K × 18 configuration in the datasheet's Pin Configuration diagrams (Figure 6.42-6).