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Renesas 71V67803S133BGG8
- Part No.:
- 71V67803S133BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67803S133BGG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V67803S133BGG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and linear/interleaved burst mode. It supports 133MHz operation with 4.2ns clock access time, 3.3V core and I/O supplies, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V67803S133BGG8 datasheet, 71V67803S133BGG8 pinout, 71V67803S133BGG8 application, or 71V67803S133BGG8 equivalent, key selection criteria include burst address sequencing control via LBO, self-timed write with global/byte write enables, ZZ-controlled sleep mode, and compatibility with JEDEC-standard 119-ball BGA (BGG) packaging.
Technical Context
The 71V67803S133BGG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV low, generating four consecutive 18-bit words per address-ordered linearly (LBO = VSS) or interleaved (LBO = VDD).
It features pipelined output registers that deliver first data one clock cycle after address latch, enabling sustained 133MHz throughput. Write cycles are self-timed and support global (GW) or byte-level (BW1–BW2) activation, with BWE gating byte write enables-BW3/BW4 are not applicable per datasheet note.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9,112,576 bits); optimized for 18-bit data bus systems like DSPs and packet processors. |
| Clock Frequency | 133MHz max; enables 7.5ns minimum clock cycle time for deterministic timing in synchronous bus interfaces. |
| Access Time | 4.2ns clock-to-data (tCD); defines worst-case latency from CLK rising edge to valid output at I/O pins. |
| Supply Voltages | VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; separate core/I/O rails allow noise isolation and signal integrity optimization. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for deployment in base station, industrial control, and automotive infotainment environments. |
| Power Consumption | ISB1 = 70mA (standby, deselected), IZZ = 70mA (full sleep); enables low-power idle states without data loss. |
| Burst Mode | Linear or interleaved via LBO pin; determines address sequence (A0/A1 progression) for four-word bursts-critical for cache line fill efficiency. |
Pinout & Package
Packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (fBGA), designated BGG119 per IDT documentation. Pin pitch is 0.8mm; body size is 12mm × 12mm. Ball map conforms to BG119 mechanical specification with VDDQ, VSS, and I/O distributed for impedance control and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus; latched synchronously on rising CLK edge when ADSP or ADSC is asserted low with CE active. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising CLK. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy; CE must be low with CS0 high and CS1 low to enable device operation. |
| ADV | Burst Address Advance | Active-low input controlling burst counter increment; held high to suspend burst and repeat current address. |
| LBO | Burst Order Selection | Static input defining burst sequence: low = linear (00→01→10→11), high = interleaved (00→01→11→10) on A0/A1. |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 writes I/O0–I/O8 + I/OP1, BW2 writes I/O9–I/O17 + I/OP2. |
| OE | Output Enable | Asynchronous control: low enables output drivers; high forces I/O pins to high-impedance regardless of clock state. |
| ZZ | Sleep Mode Input | Asynchronous high-active signal disabling internal clock and reducing supply current to 70mA while retaining data. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; bidirectional, registered I/O synchronized to CLK rising edge; supports byte-write isolation. |
| VDD, VDDQ, VSS | Power/Ground | VDD (3.3V core), VDDQ (3.3V I/O), and multiple VSS balls ensure low-noise power delivery and return path integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data appears one clock cycle after address latch-enables continuous 133MHz read throughput without inter-cycle gaps. |
| Single-Cycle Deselect | Device enters high-impedance state within one CLK cycle upon deassertion of CE/CS signals-eliminates bus contention during rapid chip switching. |
| Self-Timed Write Cycle | Internal timing logic completes write without external wait-state generation-simplifies controller design and improves bus utilization. |
| Configurable Burst Order | LBO pin selects linear or interleaved address sequence-matches CPU/cache controller expectations for optimal burst alignment. |
| Low-Power Sleep Mode | ZZ input reduces ICC to 70mA while preserving memory contents-supports dynamic power scaling in burst-idle intervals. |
Applications
| Network Packet Buffer | DSP Data Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controller's 18-bit parallel bus with burst-aligned reads. Use Value: 133MHz clock rate and 4.2ns tCD enable ≥1.2 Gbps sustained throughput; single-cycle deselect prevents frame corruption during port arbitration. | Use Scenario: Holding coefficient tables and intermediate results in real-time audio processing pipelines (e.g., echo cancellation, beamforming). IC Role / Device Role / Timing Role: Synchronous data RAM co-clocked with DSP core; burst reads supply four 18-bit samples per instruction cycle. Use Value: Pipelined outputs and linear burst mode align with DSP's fetch pattern-reducing instruction stalls by >30% vs. non-burst SRAM. |
| Industrial PLC I/O Cache | Radar Signal Processing FIFO |
Use Scenario: Caching sensor input/output states in programmable logic controllers operating in harsh industrial environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM buffering fieldbus data between microcontroller and isolated I/O modules. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation during thermal cycling; byte-write capability allows atomic update of individual I/O channels. | Use Scenario: Temporary storage of ADC-sampled chirp data in automotive radar front-ends prior to FFT computation. IC Role / Device Role / Timing Role: High-speed FIFO element accepting 133MHz sampled data streams with deterministic read latency. Use Value: 4.2ns tCD and pipelined outputs guarantee sub-5ns jitter-free data delivery to FFT engine-critical for phase coherence in FMCW radar. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18 | Same 512K×18 organization, 133MHz, but uses QDR-II+ interface with separate read/write clocks and no LBO control. | Requires dual-clock controller logic; lacks linear/interleaved burst configuration-less flexible for legacy synchronous bus designs. | Select when migrating to QDR architecture or requiring higher peak bandwidth (>2.1 Gbps) with read/write concurrency. |
| AS7C351218B | 512K×18, 133MHz, but asynchronous OE and no pipelined outputs; tAA = 10ns vs. 4.2ns tCD. | Higher access latency limits throughput in burst-intensive applications; no ZZ sleep mode-higher standby power (120mA vs. 70mA). | Select only for cost-sensitive, non-burst, low-power-constrained applications where 10ns latency is acceptable. |
Compared with CY7C1315KV18 and AS7C351218B, the 71V67803S133BGG8 delivers lower read latency (4.2ns vs. ≥10ns), configurable burst ordering for legacy controller compatibility, and integrated sleep mode-making it optimal for deterministic, low-jitter synchronous bus systems.
Availability
71V67803S133BGG8 is available at Aetrix Electronics and suitable for network packet buffering, DSP data memory, and industrial PLC I/O caching requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67803S133BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V67803S133BGG8 belongs to IDT's 71V67xx family of synchronous SRAMs, designed specifically for high-speed, low-latency memory subsystems in networking equipment, DSP-based signal processing, and real-time industrial control.
FAQ
What is the maximum clock frequency supported by the 71V67803S133BGG8?
The 71V67803S133BGG8 supports a maximum clock frequency of 133MHz, corresponding to a minimum clock cycle time (tCYC) of 7.5ns. This rating is guaranteed across the full industrial temperature range (–40°C to +85°C) and under specified 3.3V ±5% supply conditions. Operation above 133MHz is not characterized or supported.
Does the 71V67803S133BGG8 support both linear and interleaved burst modes?
Yes, the 71V67803S133BGG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven low (VSS), the device executes linear burst order (00→01→10→11 on A0/A1); when high (VDD), it executes interleaved order (00→01→11→10). LBO is static and must not change during active operation.
How many byte write enable signals does the 71V67803S133BGG8 implement?
The 71V67803S133BGG8 implements two byte write enable signals: BW1 and BW2. BW1 controls I/O0–I/O8 and I/OP1 (9 bits); BW2 controls I/O9–I/O17 and I/OP2 (9 bits). Per datasheet note, BW3 and BW4 are not applicable to the 71V67803S133BGG8-unlike the 71V67603 variant which supports four-byte writes.
What is the function of the ZZ pin on the 71V67803S133BGG8?
The ZZ pin on the 71V67803S133BGG8 is an asynchronous high-active sleep mode input. When asserted high, ZZ gates the internal clock and reduces supply current to 70mA (IZZ) while retaining all stored data. Recovery requires tZZR ≥ 100ns after ZZ returns low, and the device must be deselected during wake-up.
Which package type does the 71V67803S133BGG8 use, and what does "BGG8" signify?
The 71V67803S133BGG8 uses a 119-ball fine-pitch ball grid array (fBGA) package, JEDEC-compliant and designated BGG119. The "BGG8" suffix indicates the specific assembly variant: BGG = 119-ball fBGA, and "8" denotes the industrial temperature grade (–40°C to +85°C) and lead-free, RoHS-compliant finish.
71V67803S133BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67803S133BGG8 FAQ
1.How can I place an order for 71V67803S133BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S133BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S133BGG8 reliable?
The price and inventory of 71V67803S133BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S133BGG8 is usually 5 days.
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Once your 71V67803S133BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67803S133BGG8?
For technical support, including 71V67803S133BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S133BGG8 requirements.
6.How does Aetrix verify that 71V67803S133BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V67803S133BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S133BGG8 meets industry standards.
7.What is the process for return or replacement of 71V67803S133BGG8?
All 71V67803S133BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S133BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S133BGG8 part is unused and in its original packaging.
Return procedure for 71V67803S133BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S133BGG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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