My Inquiry
My Account
Renesas 71V67803S133BQ
- Part No.:
- 71V67803S133BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67803S133BQ.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,955
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67803S133BQ from IDT (Integrated Device Technology) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (−40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.
For engineers reviewing the 71V67803S133BQ datasheet, 71V67803S133BQ pinout, 71V67803S133BQ application, or 71V67803S133BQ equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDDQ I/O supply tolerance (±5%), TQFP-100 package compatibility, and absence of BW3/BW4 pins per datasheet note.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses from a single external address, with output pipelining delivering first valid data one cycle after CLK edge.
The device supports two memory configurations (256K×36 or 512K×18) via pin-strapping and package variant; the 71V67803S133BQ is specifically the 512K×18 version in 100-pin TQFP. It uses separate 3.3V core (VDD) and I/O (VDDQ) supplies, with asynchronous ZZ input enabling full sleep mode (IZZ ≤70mA) and asynchronous OE for output enable control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit total); configured via package/pinout - no external mode pins required |
| Clock Frequency / Access Time | 133MHz max with 4.2ns clock access time; defines minimum tCYC = 7.5ns for timing closure |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rails allow I/O voltage margining |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence; static during operation |
| Write Enable Architecture | Global Write (GW) + Byte Write Enable (BWE) + BW1/BW2 only - BW3/BW4 are not connected per datasheet note |
| Power-Down Capability | ZZ input enables full sleep mode (IZZ ≤70mA at VDD = max); asynchronous entry/exit with tZZR = 100ns min |
| Operating Temperature | Industrial grade: −40°C to +85°C; validated for sustained operation in base station and industrial controller environments |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67803S133BQ" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus; latched synchronously on rising CLK when ADSP/ADSC active; A18 unused in 512K×18 mode |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE (active LOW) gated with CS1 (LOW) and CS0 (HIGH) for full chip selection |
| GW, BWE, BW1, BW2 | Write Control Inputs | GW enables full 18-bit write; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 |
| CLK, ADV, ADSP, ADSC | Burst Timing Inputs | CLK drives all registers; ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register asynchronously |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; registered input/output paths; high-Z when OE HIGH or chip deselected |
| ZZ, OE, LBO | Mode Control | ZZ (asynchronous sleep), OE (asynchronous output enable), LBO (static burst order select) |
| VDD, VDDQ, VSS | Power/Ground | VDD (3.3V core), VDDQ (3.3V I/O), VSS (common ground); multiple dedicated pins per rail for low-impedance routing |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First read data appears on next CLK rising edge - reduces system latency vs. non-pipelined SRAMs |
| Single-Cycle Deselect | Chip transitions to high-Z output state within one clock cycle after deselection - eliminates bus contention in multi-SRAM systems |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse generation - simplifies controller interface |
| Linear/Interleaved Burst Selection | LBO pin configures burst address sequence to match processor cache line ordering (e.g., PowerPC vs. x86) |
| Low-Power Sleep Mode | IZZ ≤70mA at VDD = max ensures <100mW standby power - critical for fanless telecom chassis |
| Industrial Temperature Range | Validated operation from −40°C to +85°C - suitable for outdoor wireless infrastructure and factory automation |
Applications
| Network Packet Processor Buffer | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10Gbps+ line cards where deterministic latency is required. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer between SERDES and traffic manager ASIC. Use Value: 133MHz burst reads deliver four 18-bit words per address cycle, matching typical 72-bit wide packet header widths without glue logic. |
Use Scenario: Serving as instruction/data cache for DSP-based voice processing engines in carrier-grade VoIP gateways. IC Role / Device Role / Timing Role: Synchronous cache memory interfaced directly to TI C6000-series DSP EMIF with pipelined read support. Use Value: Pipelined outputs reduce DSP wait states; single-cycle deselect prevents bus conflicts during context switches between voice channels. |
| Industrial PLC Motion Controller | Radar Signal Processing Buffer |
Use Scenario: Holding real-time position/velocity lookup tables and motion profile buffers in CNC machine controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Deterministic-access memory for servo loop timing-critical data; powered by isolated 3.3V rails. Use Value: Industrial temperature rating (−40°C to +85°C) and ZZ sleep mode enable reliable operation in uncooled control cabinets. |
Use Scenario: Buffering intermediate FFT results in phased-array radar front-ends requiring burst-aligned data transfers to FPGA accelerators. IC Role / Device Role / Timing Role: High-throughput SRAM interfaced to Xilinx Kintex-7 via source-synchronous DDR interface using ADV/ADSP handshaking. Use Value: 4.2ns access time and burst pipelining align with FPGA logic timing budgets; LBO pin allows matching of radar chirp sequence addressing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-133AXC | 512K×18, 133MHz, 3.3V, 100-pin TQFP; supports JTAG boundary scan; no LBO pin - fixed linear burst | Requires redesign of burst address sequencing logic if interleaved mode needed; lacks ZZ sleep mode | Select when JTAG testability is mandatory and burst mode flexibility is not required |
| AS7C35128P-133BIN | 512K×18, 133MHz, 3.3V, 100-pin TQFP; no pipelined outputs - outputs valid after tAA = 5.5ns; no ADV/ADSP/ADSC inputs | Higher read latency; requires simpler controller but cannot support cache-coherent burst protocols | Select for cost-sensitive applications where deterministic tAA timing suffices and burst pipelining is unnecessary |
Compared with CY7C1371BV33-133AXC and AS7C35128P-133BIN, the 71V67803S133BQ uniquely delivers pipelined burst reads, programmable burst order (LBO), and full-sleep mode (ZZ), making it optimal for latency-constrained, power-aware telecom and industrial designs where controller complexity must be minimized.
Availability
71V67803S133BQ is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, industrial PLCs, and radar signal processing systems requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for 71V67803S133BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and RF solutions for communications, computing, and industrial markets.
The 71V67803S133BQ belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented buffering in networking and real-time control systems demanding deterministic timing and industrial temperature resilience.
FAQ
What memory configuration does the 71V67803S133BQ implement?
The 71V67803S133BQ is a 512K × 18-bit synchronous SRAM (9Mbit total), physically implemented in the 100-pin TQFP package with A0–A17 address lines and I/O0–I/O17 + I/OP1–I/OP2 data terminals. It does not support the 256K×36 configuration - that variant is assigned to the 71V67603 family member.
Does the 71V67803S133BQ support BW3 and BW4 pins?
No. Per the official datasheet note on page 2 ("BW3 and BW4 are not applicable for the IDT71V67803"), the 71V67803S133BQ omits BW3 and BW4 functionality entirely. Only BW1 and BW2 are implemented, controlling byte groups I/O0–I/O8/I/OP1 and I/O9–I/O17/I/OP2 respectively.
What is the role of the LBO pin on the 71V67803S133BQ?
The LBO (Linear Burst Order) pin on the 71V67803S133BQ statically selects burst address sequencing: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). It must remain stable during operation and is not sampled dynamically - configuration occurs at power-up or mode change.
How does the 71V67803S133BQ enter and exit sleep mode?
The 71V67803S133BQ enters full sleep mode when ZZ is driven HIGH asynchronously; it exits sleep mode when ZZ returns LOW, requiring tZZR ≥ 100ns before next valid access. During sleep, IZZ ≤70mA (industrial grade), and all outputs go high-Z - no clock or other signals need to be gated externally.
Is the 71V67803S133BQ pin-compatible with the 71V67603 series?
No. Although both share the same 100-pin TQFP footprint, the 71V67803S133BQ and 71V67603 differ in functional pin assignments: the 71V67803S133BQ disables BW3/BW4 and repurposes associated pins (e.g., pins 6–7 in PKG100), while the 71V67603 uses them for full 36-bit byte writes. PCB layout is not interchangeable.
71V67803S133BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67803S133BQ FAQ
1.How can I place an order for 71V67803S133BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S133BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S133BQ reliable?
The price and inventory of 71V67803S133BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S133BQ is usually 5 days.
3.What payment methods are accepted for 71V67803S133BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67803S133BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67803S133BQ?
71V67803S133BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67803S133BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67803S133BQ?
For technical support, including 71V67803S133BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S133BQ requirements.
6.How does Aetrix verify that 71V67803S133BQ is sourced from the original manufacturer or authorized distributors?
All 71V67803S133BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S133BQ meets industry standards.
7.What is the process for return or replacement of 71V67803S133BQ?
All 71V67803S133BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S133BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S133BQ part is unused and in its original packaging.
Return procedure for 71V67803S133BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S133BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
