Renesas 71V67803S133BQG

Overview

71V67803S133BQG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and FPGA co-processor memory subsystems.

For engineers reviewing the 71V67803S133BQG datasheet, 71V67803S133BQG pinout, 71V67803S133BQG application, or 71V67803S133BQG equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDD/VDDQ supply separation, and TQFP-100 package compatibility with legacy IDT SRAM layouts.

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control paths triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state - no runtime reconfiguration permitted. Pipelined read output delivers first valid data one clock cycle after address latch, with subsequent burst words aligned to consecutive CLK edges.

The device supports four distinct write modes: global write (GW), byte write enable (BWE) with BW1–BW2 (BW3/BW4 not applicable per datasheet note), and asynchronous OE-controlled output disable. Sleep mode is entered asynchronously via ZZ=HIGH, gating CLK internally while retaining data with IZZ ≤70mA at industrial temperature.

Key Specifications

Pinout & Package

71V67803S133BQG is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm lead pitch. Pin 1 marked by corner notch; top-side marking includes "71V67803S133BQG" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-133BZXI and AS7C3512PFSI-133, the 71V67803S133BQG uniquely supports both ADSC-based cache coherency and configurable linear/interleaved burst - enabling tighter integration with legacy IDT-based systems and flexible memory controller design.

Availability

71V67803S133BQG is available at Aetrix Electronics and suitable for networking infrastructure, industrial automation, and avionics applications requiring stable component supply, extended temperature operation, and long-lifecycle support.

Supply support for 71V67803S133BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.

The 71V67803S133BQG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for demanding real-time applications in communications, test equipment, and industrial control where deterministic timing and low-latency access are critical.

FAQ

What is the maximum operating frequency of the 71V67803S133BQG?

The 71V67803S133BQG is rated for 133MHz operation with a minimum clock cycle time (tCYC) of 7.5ns. At this frequency, its clock-to-data delay (tCD) is guaranteed at 4.2ns. The device also supports lower-speed 150MHz (3.8ns tCD) and 166MHz (3.5ns tCD) variants within the same family, but the 'S133' suffix confirms this unit is specifically characterized and screened for 133MHz performance.

Does the 71V67803S133BQG support byte write operations?

Yes, the 71V67803S133BQG supports byte write operations via BWE and BW1–BW2 inputs. BW1 controls I/O0–I/O8 and I/OP1 (9 bits), BW2 controls I/O9–I/O17 and I/OP2 (9 bits). Per datasheet note, BW3 and BW4 are not applicable for the 71V67803S133BQG - confirming it is the 512K × 18 variant, not the 256K × 36 version which uses all four byte enables.

What is the function of the LBO pin on the 71V67803S133BQG?

The LBO (Linear Burst Order) pin on the 71V67803S133BQG is an asynchronous input that statically selects burst sequence mode: LBO = LOW enables linear burst order, LBO = HIGH enables interleaved burst order. It must remain stable during operation - dynamic switching is not supported. This allows alignment with specific processor cache line access patterns without software intervention.

How does sleep mode work on the 71V67803S133BQG?

Sleep mode on the 71V67803S133BQG is activated asynchronously by driving ZZ = HIGH. This internally gates the CLK path and reduces supply current to ≤70mA (industrial grade). Data retention is guaranteed during sleep. To resume operation, ZZ must be returned LOW and the device must be deselected (CE/CS1 deasserted) before re-enabling - per datasheet requirement that the device be deselected when powered up from sleep mode.

Is the 71V67803S133BQG pin-compatible with other IDT SRAMs?

Yes, the 71V67803S133BQG uses the standard IDT 100-pin TQFP footprint (PKG100) shared across the 71V67603/67803 family. Pin functions match identically for A0–A17, CLK, CE, CS0, CS1, GW, BWE, BW1–BW2, OE, ZZ, LBO, I/O0–I/O17, I/OP1–I/OP2, VDD, VDDQ, and VSS. NC pins and address bit allocation (e.g., A18 usage) differ between 256K×36 and 512K×18 variants, but layout reuse is feasible with minor netlist updates.