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Renesas 71V67803S133BQG8

Name: 71V67803S133BQG8
Brand: Renesas
SKU: 71V67803S133BQG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67803S133BQG8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67803S133BQG8.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V67803S133BQG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz clock operation (4.2ns access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (−40°C to +85°C). It is used in high-speed networking buffers and real-time DSP memory subsystems.

For engineers reviewing the 71V67803S133BQG8 datasheet, 71V67803S133BQG8 pinout, 71V67803S133BQG8 application, or 71V67803S133BQG8 equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), 100-pin TQFP package compatibility, and absence of BW3/BW4 pins per device-specific pinout.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state-no runtime reconfiguration. Pipelined output registers deliver first data one clock cycle after address latch, enabling deterministic 133MHz read throughput.

Write operations are self-timed and support four distinct modes: global write (GW), byte-write enable (BWE), individual byte writes (BW1–BW2), and chip-select-gated deselection. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, with ZZ input asynchronously gating internal clock to achieve ≤70mA full-sleep current.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit); supports only this configuration - BW3/BW4 not implemented per datasheet note.
Clock Frequency / Access Time	133MHz max (tCYC = 7.5ns); 4.2ns clock-to-data (tCD) - defines minimum system clock period for reliable read timing.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rails allow I/O voltage domain isolation in mixed-voltage systems.
Operating Temperature	−40°C to +85°C (industrial grade); validated across full range for telecom and industrial control applications.
Sleep Current (IZZ)	≤70mA at VDD = max; enables low-power standby in always-on network line cards without external power sequencing.
Burst Mode Control	LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) address sequence; static configuration required before operation.
Output Enable Timing	tOHZ = 4.2ns max; ensures clean bus release within one clock cycle when OE deasserted - critical for multi-SRAM bus sharing.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated for 512K × 18 configuration per PKG100 drawing (Rev 6.42, p.6).

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus; latched synchronously on rising CLK edge with ADSP/ADSC assertion - supports 512K depth.
CLK	System Clock Input	Primary timing reference; all register transfers (address/data/control) edge-triggered on rising CLK - no internal PLL.
CE, CS0, CS1	Chip Enable / Selects	Three-input decode (CE=LOW, CS0=HIGH, CS1=LOW) enables device; allows bank selection in multi-SRAM systems.
GW, BWE, BW1–BW2	Write Control Inputs	GW overrides all byte enables; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - no BW3/BW4 on 71V67803.
OE	Asynchronous Output Enable	Drives I/O pins to high-Z when HIGH; tOHZ = 4.2ns max ensures fast bus release without clock dependency.
ZZ	Asynchronous Sleep Mode	Internally gates CLK when HIGH; reduces IDD to ≤70mA; no power sequencing required - safe for hot-swap applications.
I/O0–I/O17, I/OP1–I/OP2	Data I/O (18-bit + 2 parity)	Registered bidirectional bus; pipelined output register delivers data one cycle after address latch - enables back-to-back reads.
VDD, VDDQ, VSS	Power/Ground	Dual supply: VDD powers core logic, VDDQ powers I/O drivers - decoupling must be per pin per datasheet layout guidelines.

Key Features

Feature	Design Value
Pipelined Outputs	First output data available one clock cycle after address latch - eliminates wait states in 133MHz CPU/SOC interfaces.
Single-Cycle Deselect	Outputs enter high-Z within one CLK cycle of CE/CS deassertion - prevents bus contention during rapid bank switching.
Self-Timed Write Cycle	Internal timing logic completes write without external strobes; supports GW, BWE, and BW1/BW2 modes with no external delay tuning.
Linear/Interleaved Burst Modes	LBO pin statically configures burst address sequence - matches cache line ordering requirements in MIPS/PowerPC-based systems.
Low-Power Sleep Mode	IZZ ≤70mA at VDD max; ZZ input requires no clock or setup - enables instantaneous entry/exit for packet-buffer power gating.

Applications

Networking Buffer Memory	DSP Data Memory
Use Scenario: Line-rate packet buffering in 10G Ethernet MAC controllers where burst reads/writes align with 64-byte cache lines. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as primary data buffer between SERDES and traffic manager ASIC. Use Value: 133MHz clock + pipelined outputs sustain 2.38 Gbps sustained read throughput; single-cycle deselect prevents FIFO underflow during priority queue preemption.	Use Scenario: Real-time coefficient storage in radar signal processors requiring deterministic 4-word burst access per FFT stage. IC Role / Device Role / Timing Role: Synchronous memory mapped into DSP's external memory space; LBO configured for linear burst to match FFT twiddle table stride. Use Value: 4.2ns tCD and tOE guarantee sub-30ns total read latency; industrial temp rating ensures reliability in sealed avionics enclosures.
Industrial PLC I/O Cache	Test Equipment Pattern Memory
Use Scenario: Caching digital I/O state changes in modular programmable logic controllers with deterministic scan cycle timing. IC Role / Device Role / Timing Role: Dual-port accessible via microcontroller and FPGA; ZZ pin controlled by watchdog timer to reduce idle power. Use Value: ≤70mA IZZ enables >90% power reduction during 50ms scan idle periods; 100-pin TQFP simplifies routing on dense industrial PCBs.	Use Scenario: Storing high-speed digital test vectors in ATE systems requiring precise 133MHz pattern replay with zero jitter accumulation. IC Role / Device Role / Timing Role: Clock-synchronous waveform generator memory; ADV and OE tightly coordinated to eliminate glitches during vector transitions. Use Value: tCLZ = 0ns and tCHZ = 4.2ns ensure glitch-free output enable timing; VDD/VDDQ separation prevents noise coupling from high-speed drivers.

Networking Buffer Memory

DSP Data Memory

Use Scenario: Line-rate packet buffering in 10G Ethernet MAC controllers where burst reads/writes align with 64-byte cache lines.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as primary data buffer between SERDES and traffic manager ASIC.

Use Value: 133MHz clock + pipelined outputs sustain 2.38 Gbps sustained read throughput; single-cycle deselect prevents FIFO underflow during priority queue preemption.

Use Scenario: Real-time coefficient storage in radar signal processors requiring deterministic 4-word burst access per FFT stage.

IC Role / Device Role / Timing Role: Synchronous memory mapped into DSP's external memory space; LBO configured for linear burst to match FFT twiddle table stride.

Use Value: 4.2ns tCD and tOE guarantee sub-30ns total read latency; industrial temp rating ensures reliability in sealed avionics enclosures.

Industrial PLC I/O Cache

Test Equipment Pattern Memory

Use Scenario: Caching digital I/O state changes in modular programmable logic controllers with deterministic scan cycle timing.

IC Role / Device Role / Timing Role: Dual-port accessible via microcontroller and FPGA; ZZ pin controlled by watchdog timer to reduce idle power.

Use Value: ≤70mA IZZ enables >90% power reduction during 50ms scan idle periods; 100-pin TQFP simplifies routing on dense industrial PCBs.

Use Scenario: Storing high-speed digital test vectors in ATE systems requiring precise 133MHz pattern replay with zero jitter accumulation.

IC Role / Device Role / Timing Role: Clock-synchronous waveform generator memory; ADV and OE tightly coordinated to eliminate glitches during vector transitions.

Use Value: tCLZ = 0ns and tCHZ = 4.2ns ensure glitch-free output enable timing; VDD/VDDQ separation prevents noise coupling from high-speed drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-133AXC	512K × 18, 133MHz, same 100-pin TQFP, but uses single 3.3V supply (no VDDQ); tCD = 4.5ns (vs. 4.2ns).	Lower I/O noise margin due to shared VDD/VDDQ; unsuitable for mixed-signal test equipment requiring strict I/O rail isolation.	Select when board layout lacks dedicated VDDQ decoupling or cost sensitivity outweighs 0.3ns timing advantage.
AS7C35128P-133BIN	512K × 18, 133MHz, 100-pin TQFP, but no ZZ sleep mode; ISB1 = 120mA (vs. 70mA in sleep).	Cannot meet <100mA standby budget in battery-backed industrial gateways; lacks asynchronous sleep entry/exit.	Select only for non-power-constrained applications where simplified control logic (no ZZ handling) reduces firmware overhead.

Compared with CY7C1371BV33-133AXC and AS7C35128P-133BIN, the 71V67803S133BQG8 uniquely delivers dual-supply isolation, lowest sleep current, and tightest 4.2ns tCD - making it optimal for thermally constrained, high-reliability embedded systems requiring deterministic timing and power efficiency.

Availability

71V67803S133BQG8 is available at Aetrix Electronics and suitable for networking buffer memory, DSP data memory, industrial PLC I/O cache, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for 71V67803S133BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded processing solutions for industrial, automotive, and communications markets.

The 71V67803S133BQG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic timing, low-power sleep, and seamless integration into real-time data-path architectures.

FAQ

What memory organization does the 71V67803S133BQG8 support?

The 71V67803S133BQG8 is strictly configured as 512K × 18-bit (9Mbit). Unlike the pin-compatible 71V67603, it does not support 256K × 36-bit mode. BW3 and BW4 pins are not functional on the 71V67803S133BQG8, confirming its fixed 18-bit data width per datasheet note on page 3.

Does the 71V67803S133BQG8 support both linear and interleaved burst modes?

Yes, the 71V67803S133BQG8 supports both burst modes via the LBO pin: LBO = LOW selects linear sequence, LBO = HIGH selects interleaved. This is a static configuration - LBO must remain stable during operation per datasheet section 6.42, page 11.

What is the guaranteed maximum access time for the 71V67803S133BQG8 at 133MHz?

The guaranteed maximum clock-to-data access time (tCD) for the 71V67803S133BQG8 at 133MHz is 4.2ns, as specified in Table 16 (AC Electrical Characteristics) on page 12 of the datasheet. This value applies across the full industrial temperature range (−40°C to +85°C).

How does the ZZ pin function on the 71V67803S133BQG8?

The ZZ pin on the 71V67803S133BQG8 provides asynchronous entry into full-sleep mode: when driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70mA (IZZ). No clock or setup timing is required - the device enters sleep immediately upon ZZ assertion.

Is the 71V67803S133BQG8 pin-compatible with other devices in the 71V67xxx family?

The 71V67803S133BQG8 shares the same 100-pin TQFP footprint with the 71V67603, but pin functions differ: BW3/BW4 are NC on the 71V67803S133BQG8 (page 3), and address pin count is optimized for 512K×18 (A0–A17 only). Direct replacement requires verification of BWx and address mapping in the target design.

71V67803S133BQG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67803S133BQG8 FAQ

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The price and inventory of 71V67803S133BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S133BQG8 is usually 5 days.

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All 71V67803S133BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S133BQG8 meets industry standards.

7.What is the process for return or replacement of 71V67803S133BQG8?

All 71V67803S133BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S133BQG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67803S133BQG8 part is unused and in its original packaging.

Return procedure for 71V67803S133BQG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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