Renesas 71V67803S133BQGI

Overview

71V67803S133BQGI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global and byte-level controls, and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67803S133BQGI datasheet, 71V67803S133BQGI pinout, 71V67803S133BQGI application, or 71V67803S133BQGI equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), 100-pin TQFP mechanical compatibility, and absence of BW3/BW4 pins per device-specific pin definition.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter-gated by ADV and configured by LBO-generates four sequential addresses per initial access, enabling pipelined read/write bursts without external sequencing logic.

The device uses dual supply rails (VDD = 3.3V ±5% core, VDDQ = 3.3V ±5% I/O), supports asynchronous OE and ZZ inputs, and enforces strict setup/hold timing (e.g., tSA = 1.5ns, tHA = 0.5ns) relative to CLK. Write operations are controlled synchronously via GW, BWE, and BW1–BW2 only-BW3/BW4 are not implemented in the 71V67803 variant.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout conforms to PKG100 configuration for 512K × 18 mode (per 5310 drw 03), with NC pins at positions A1, A10, A11, A14, A15, A16, A17, A18, B1, B2, C1, C2, D1, D2, E1, E2, F1, F2, G1, G2, H1, H2, J1, J2, K1, K2, L1, L2, M1, M2, N1, N2, P1, P2, R1, R2, T1, T2, U1, U2, U7, U8, U9, U10, U11.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372DV33-133BZXI and AS7C3512PFS-133BIN, the 71V67803S133BQGI uniquely delivers true pipelined burst capability with dedicated cache-controller interface signals (ADSC/ADSP/ADV) and split VDD/VDDQ rails-critical for noise-sensitive, high-density telecom designs.

Availability

71V67803S133BQGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, and radar signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67803S133BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications and computing markets.

The 71V67803S133BQGI belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic, low-latency data buffering in carrier-class networking and real-time embedded systems.

FAQ

What is the maximum supported clock frequency for the 71V67803S133BQGI?

The 71V67803S133BQGI is rated for 133MHz operation with a guaranteed 4.2ns clock access time under industrial conditions. While the datasheet notes 150MHz and 166MHz variants exist in the family (71V67603/71V67803), the 'S133' suffix explicitly denotes the 133MHz speed grade. Exceeding this frequency violates AC timing specifications including tCYC (7.5ns min) and may cause data corruption.

Does the 71V67803S133BQGI support both 256K × 36 and 512K × 18 configurations?

No-the 71V67803S133BQGI is specifically the 512K × 18 configuration. The '71V67803' base part number covers both densities, but density is fixed by internal metal mask and package marking. This device implements only the 512K × 18 organization, with A18 unused and BW3/BW4 pins designated as NC per pin diagram 5310 drw 03.

How does the LBO pin affect burst addressing in the 71V67803S133BQGI?

The LBO pin statically selects burst order: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). Per datasheet note, LBO must remain stable during operation-changing it mid-burst causes undefined address sequencing. The selection directly maps to CPU cache line layouts used in PowerPC and older MIPS implementations.

What is the function of the ZZ pin, and what happens to data retention in sleep mode?

The ZZ pin is an asynchronous input that places the 71V67803S133BQGI into full sleep mode when driven HIGH, reducing supply current to ≤70mA (industrial grade). Data retention is guaranteed during sleep mode per datasheet specification-no external refresh or backup power is required. Clock is internally gated, and all outputs enter high-Z state.

Are BW3 and BW4 functional on the 71V67803S133BQGI?

No-BW3 and BW4 are explicitly marked "not applicable" for the 71V67803 in the datasheet (note on tbl 01). In the 512K × 18 configuration, only BW1 (controls I/O0–I/O8/I/OP1) and BW2 (controls I/O9–I/O17/I/OP2) are active. Pins BW3/BW4 are NC (no connect) and must be left unconnected or tied to VSS per JEDEC guidelines.