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Renesas 71V67803S133BQI
- Part No.:
- 71V67803S133BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67803S133BQI.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,475
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Product details
Overview
71V67803S133BQI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (−40°C to +85°C). It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V67803S133BQI datasheet, 71V67803S133BQI pinout, 71V67803S133BQI application, or 71V67803S133BQI equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), 100-pin TQFP mechanical compatibility, and absence of BW3/BW4 pins per device-specific pinout.
Technical Context
The 71V67803S133BQI implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO level-no dynamic switching during operation.
It uses self-timed write cycles gated by GW (global) or BWE + BW1/BW2 (byte-select), with pipelined output registers delivering first data one clock cycle after address latch. Deselect occurs in a single CLK cycle when CE/CS0/CS1 transition out of active state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit); configured for 18-bit data bus width with A0–A18 addressing. |
| Clock Frequency | 133MHz max; enables 7.5ns clock cycle time for deterministic timing in high-throughput systems. |
| Access Time | 4.2ns clock-to-data (tCD); defines minimum latency from CLK rising edge to valid output at I/O pins. |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate rails allow independent noise management. |
| Sleep Current | IZZ ≤ 70mA (industrial temp); achieved by asserting ZZ HIGH to gate internal clock and reduce dynamic power. |
| Burst Modes | Linear or interleaved 4-word burst selected by LBO pin; no software configuration required. |
| Write Control | Global (GW) or byte-select (BWE + BW1/BW2 only; BW3/BW4 not implemented per datasheet note). |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated for 512K × 18 configuration (PKG100) per datasheet Figure 5310 drw 03.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion. |
| CLK | Clock Input | Primary timing reference; all synchronous operations referenced to rising edge. |
| CE, CS0, CS1 | Chip Enable / Select | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; provides flexible chip selection. |
| GW, BWE, BW1, BW2 | Write Control Inputs | GW writes all 18-bit words; BWE enables BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2. |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances burst counter; ADSP (processor) or ADSC (cache) loads initial address into register. |
| LBO | Burst Order Select | Asynchronous static input: LBO=LOW → linear burst; LBO=HIGH → interleaved burst. |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; clocks gated, I/Os tri-stated, core power minimized. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; registered inputs/outputs synchronized to CLK. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data appears one clock cycle after address latch, enabling continuous burst throughput without inter-cycle gaps. |
| Single-Cycle Deselect | Device enters high-impedance state within one CLK cycle upon chip disable, eliminating bus contention in multi-SRAM systems. |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; write completion determined autonomously per cycle. |
| Industrial Temperature Range | Rated −40°C to +85°C; qualified for base station, industrial control, and transportation infrastructure applications. |
| Low-Power Sleep Mode | IZZ ≤ 70mA at VDD=Max ensures minimal standby power in always-on systems with periodic activity bursts. |
Applications
| Baseband Processing in 4G/LTE Radio Units | High-Speed Packet Buffering in Network Switch ASICs |
|---|---|
Use Scenario: Stores intermediate FFT/IFFT results and channel estimation data between DSP cores and RF front-end in LTE eNodeB units. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as dual-port scratchpad memory with pipelined read/write alignment to 133MHz baseband clock domain. Use Value: 4.2ns tCD and single-cycle deselect enable real-time processing of 20MHz bandwidth signals without pipeline stalls. | Use Scenario: Buffers ingress/egress packet headers and metadata in Layer 2/3 switch fabric ASICs handling 10Gbps line rates. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 133MHz burst reads/writes to support parallel lookup engines and queue management logic. Use Value: Linear burst mode delivers four consecutive 18-bit words per address, reducing address bus toggling and improving effective bandwidth by 3× vs random access. |
| Industrial PLC Motion Control Modules | Avionics Data Acquisition Systems |
Use Scenario: Holds interpolated trajectory points and servo feedback history in real-time motion controllers requiring sub-microsecond jitter. IC Role / Device Role / Timing Role: Deterministic-access SRAM used as position/velocity history buffer, interfaced directly to FPGA-based motion sequencers. Use Value: Industrial-grade temperature rating (−40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncooled control cabinets with thermal cycling. | Use Scenario: Captures synchronized analog sensor samples (e.g., accelerometers, gyros) at 1MSps for flight data recorders and health monitoring. IC Role / Device Role / Timing Role: High-reliability SRAM serving as first-stage circular buffer before compression/FEC encoding in ARINC-429 or AFDX endpoints. Use Value: 100-pin TQFP package supports IPC-7351-compliant layout; low IZZ sleep current extends battery-backed retention time during aircraft ground maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-133AXC | 512K × 18, 133MHz, 3.3V, but uses QCC (quad ceramic column grid array) package; no ZZ sleep pin-relies on deselected ISB2 mode only. | Lacks hardware sleep control; higher standby current (ISB2 = 170mA vs IZZ = 70mA) limits battery-critical use cases. | Select when ceramic packaging and extended reliability testing (MIL-PRF-38535) are required over power optimization. |
| AS7C35128P-133JCIN | 512K × 18, 133MHz, 3.3V, 100-pin TQFP, but lacks ADV/ADSP/ADSC burst control-only supports asynchronous address advance. | No pipelined burst capability; tCD = 5.5ns (vs 4.2ns), limiting throughput in burst-intensive designs. | Select for cost-sensitive applications where burst depth is shallow and timing margin allows 1.3ns slower access. |
Compared with CY7C1371BV33-133AXC and AS7C35128P-133JCIN, the 71V67803S133BQI uniquely combines ZZ-enabled ultra-low sleep current, true pipelined burst output, and industrial-qualified 100-pin TQFP-making it optimal for thermally constrained, burst-oriented embedded systems.
Availability
71V67803S133BQI is available at Aetrix Electronics and suitable for baseband processing, network packet buffering, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V67803S133BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, and memory solutions for automotive, industrial, and communications markets.
The 71V67803S133BQI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for burst-intensive, low-latency memory subsystems in telecom infrastructure and real-time control systems.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V67803S133BQI?
The 71V67803S133BQI is rated for 133MHz operation with a guaranteed clock-to-data access time (tCD) of 4.2ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and under worst-case VDD/VDDQ conditions (3.135V to 3.465V). The device also supports lower-frequency modes (150MHz/3.8ns, 166MHz/3.5ns) but 71V67803S133BQI is specifically characterized and screened for 133MHz performance.
Does the 71V67803S133BQI support both linear and interleaved burst modes, and how is the selection made?
Yes, the 71V67803S133BQI supports both linear and interleaved 4-word burst sequences. Selection is controlled by the asynchronous LBO (Linear Burst Order) pin: LBO = LOW configures linear burst order, while LBO = HIGH selects interleaved order. Per datasheet note, LBO is a static input and must not change state during device operation-configuration occurs at power-up or system initialization.
Which byte write enable pins are functional on the 71V67803S133BQI, and what data segments do they control?
Only BW1 and BW2 are functional on the 71V67803S133BQI; BW3 and BW4 are not applicable per explicit datasheet note. BW1 controls I/O0–I/O8 and I/OP1 (9-bit segment), while BW2 controls I/O9–I/O17 and I/OP2 (9-bit segment). This matches the 512K × 18 organization, where each byte write enables one 9-bit half-word of the 18-bit data bus plus its associated parity bit.
What is the purpose of the ZZ pin on the 71V67803S133BQI, and what is its effect on power consumption?
ZZ is the asynchronous sleep mode input on the 71V67803S133BQI. When driven HIGH, ZZ gates the internal clock and places the device in full sleep mode, reducing supply current to IZZ ≤ 70mA (industrial grade). This is distinct from standby modes (ISB1/ISB2), offering the lowest power state while retaining data integrity. The 71V67803S133BQI guarantees data retention during sleep mode across its full operating temperature range.
Is the 71V67803S133BQI pin-compatible with other members of the 71V67603/71V67803 family, such as the 71V67603S133BQI?
No, the 71V67803S133BQI is not pin-compatible with the 71V67603S133BQI. While both share the same 100-pin TQFP package and core pinout structure, the 71V67603 (256K × 36) implements BW3/BW4 and routes different address/data lines (e.g., A15–A17, I/O18–I/O31), whereas the 71V67803 (512K × 18) omits BW3/BW4 and reassigns those pins as NC or alternate functions. PCB layout must be verified against the specific 71V67803S133BQI pin configuration diagram.
71V67803S133BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67803S133BQI FAQ
1.How can I place an order for 71V67803S133BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S133BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S133BQI reliable?
The price and inventory of 71V67803S133BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S133BQI is usually 5 days.
3.What payment methods are accepted for 71V67803S133BQI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67803S133BQI transactions.
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4.How is shipping managed for 71V67803S133BQI?
71V67803S133BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67803S133BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67803S133BQI?
For technical support, including 71V67803S133BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S133BQI requirements.
6.How does Aetrix verify that 71V67803S133BQI is sourced from the original manufacturer or authorized distributors?
All 71V67803S133BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S133BQI meets industry standards.
7.What is the process for return or replacement of 71V67803S133BQI?
All 71V67803S133BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S133BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S133BQI part is unused and in its original packaging.
Return procedure for 71V67803S133BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S133BQI Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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