Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67803S150BG

Name: 71V67803S150BG
Brand: Renesas
SKU: 71V67803S150BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 71V67803S150BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67803S150BG.pdf

Description:: IC SRAM 9MBIT PAR 150MHZ 119PBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,468

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

71V67803S150BG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (–40°C to +85°C) in a 100-pin TQFP package. It serves as high-speed cache or buffer memory in networking line cards and real-time DSP subsystems.

For engineers reviewing the 71V67803S150BG datasheet, 71V67803S150BG pinout, 71V67803S150BG application, or 71V67803S150BG equivalent, key selection criteria include burst timing compliance, ZZ sleep-mode current (≤70mA), VDDQ = 3.3V ±5% I/O supply tolerance, and absence of BW3/BW4 pins - confirmed for this variant per Pin Definitions Note 1.

Technical Context

The 71V67803S150BG implements a synchronous, clock-driven architecture with registered address, data, and control inputs triggered on the rising CLK edge. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) based on static LBO state - no runtime reconfiguration permitted.

Write operations are self-timed and support four modes: global write (GW active), byte write (BWE + BW1/BW2), asynchronous OE-controlled output enable, and full-sleep mode via asynchronous ZZ HIGH. Deselection occurs in one clock cycle, enabling rapid bus turnaround in multi-master systems.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit); configured as 18-bit wide data bus - matches standard DSP and FPGA memory interfaces.
Clock Frequency / Access Time	150MHz max, 3.8ns clock access time - enables sustained 600MB/s burst throughput (4×18-bit words/cycle).
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; separate core/I/O rails allow independent noise management and signal integrity optimization.
Power Consumption	ISB1 standby current ≤70mA (industrial temp); IZZ sleep current ≤70mA - critical for thermally constrained telecom modules.
Burst Mode Control	LBO pin selects linear or interleaved address sequence; static configuration - must be stable before initialization.
Write Enable Logic	GW (global) and BWE + BW1/BW2 (byte) inputs are synchronous; BW3/BW4 not implemented - verified in Pin Definitions Note 1.
Package	JEDEC-standard 100-pin TQFP (14mm × 20mm); compatible with automated SMT placement and IPC-7351 footprint guidelines.

Pinout & Package

71V67803S150BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67803S150BG" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus; A0/A1 advance during burst - determines word offset within 4-word burst sequence.
CE, CS0, CS1	Chip Enable / Selects	Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip memory banks.
GW, BWE, BW1, BW2	Write Control Inputs	GW writes all 18 bits; BWE enables BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - no BW3/BW4 present.
CLK, ADV, ADSP, ADSC	Timing & Burst Control	CLK drives all registers; ADV=LOW advances burst counter; ADSP/ADSC load address register - dual-source address status support.
OE, ZZ, LBO	Output & Mode Control	OE (asynchronous) enables I/O drivers; ZZ=HIGH forces full sleep (IZZ ≤70mA); LBO sets burst order - must be static during operation.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus + 2 parity bits; registered I/O paths ensure deterministic timing at 150MHz.
VDD, VDDQ, VSS	Power & Ground	VDD (core), VDDQ (I/O), and multiple VSS pins provide low-inductance return paths - essential for signal integrity at high speed.

Key Features

Feature	Design Value
Pipelined Outputs	First data word appears on next CLK rising edge after address setup - reduces read latency by one cycle versus non-pipelined SRAMs.
Single-Cycle Deselect	Device enters high-Z state within one CLK period upon CE/CS deassertion - eliminates bus contention in shared-memory architectures.
Self-Timed Write Cycle	Internal timing logic eliminates external write pulse generation - simplifies controller design and improves write reliability across voltage/temp.
Linear/Interleaved Burst Selection	LBO pin configures burst address sequence without firmware overhead - matches cache line layouts in x86 or PowerPC processors.
Industrial Temperature Range	–40°C to +85°C operation with guaranteed IDD ≤260mA (150MHz, industrial) - suitable for uncooled base station and industrial PLC applications.
Low-Power Sleep Mode	ZZ HIGH reduces supply current to ≤70mA while retaining data - enables power-gating in battery-backed or energy-sensitive systems.

Applications

Networking Line Card Buffer	DSP-Based Real-Time Signal Processing
Use Scenario: High-throughput packet buffering in 10G Ethernet MAC layer, requiring zero-wait-state access and burst-aligned reads. IC Role / Device Role / Timing Role: Primary data buffer between SERDES PHY and traffic manager ASIC; provides pipelined 150MHz burst reads with single-cycle deselect. Use Value: Enables 600MB/s sustained bandwidth using only two 71V67803S150BG devices in parallel - avoids complex DDR interface design.	Use Scenario: Co-processor memory for TI C6000 or Analog Devices SHARC DSPs executing FFT-based radar processing with strict latency budgets. IC Role / Device Role / Timing Role: Dual-port-accessible scratchpad memory; burst mode aligns with DSP's 4-word instruction fetch pattern. Use Value: Linear burst mode (LBO=LOW) delivers sequential 18-bit coefficients in lockstep with DSP pipeline - eliminates address calculation overhead.
FPGA-Based Protocol Accelerator	Industrial Motion Controller Memory
Use Scenario: Offloading TCP/IP checksum and segmentation logic in Xilinx Kintex FPGA; requires deterministic 150MHz memory access with low jitter. IC Role / Device Role / Timing Role: Dedicated instruction/data RAM for soft-core Nios II or MicroBlaze; uses GW writes for fast context switching. Use Value: Self-timed write cycle ensures reliable data capture without FPGA logic managing write pulse width - reduces RTL complexity.	Use Scenario: Position loop buffer in servo drive controllers operating in harsh factory environments (–40°C to +85°C). IC Role / Device Role / Timing Role: Real-time motion profile storage; ZZ sleep mode activated during idle periods to meet <1W thermal envelope. Use Value: Industrial-grade VDD/VDDQ tolerance (±5%) and IZZ ≤70mA guarantee stable operation despite 12V rail ripple and ambient temperature swings.

Networking Line Card Buffer

DSP-Based Real-Time Signal Processing

Use Scenario: High-throughput packet buffering in 10G Ethernet MAC layer, requiring zero-wait-state access and burst-aligned reads.

IC Role / Device Role / Timing Role: Primary data buffer between SERDES PHY and traffic manager ASIC; provides pipelined 150MHz burst reads with single-cycle deselect.

Use Value: Enables 600MB/s sustained bandwidth using only two 71V67803S150BG devices in parallel - avoids complex DDR interface design.

Use Scenario: Co-processor memory for TI C6000 or Analog Devices SHARC DSPs executing FFT-based radar processing with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port-accessible scratchpad memory; burst mode aligns with DSP's 4-word instruction fetch pattern.

Use Value: Linear burst mode (LBO=LOW) delivers sequential 18-bit coefficients in lockstep with DSP pipeline - eliminates address calculation overhead.

FPGA-Based Protocol Accelerator

Industrial Motion Controller Memory

Use Scenario: Offloading TCP/IP checksum and segmentation logic in Xilinx Kintex FPGA; requires deterministic 150MHz memory access with low jitter.

IC Role / Device Role / Timing Role: Dedicated instruction/data RAM for soft-core Nios II or MicroBlaze; uses GW writes for fast context switching.

Use Value: Self-timed write cycle ensures reliable data capture without FPGA logic managing write pulse width - reduces RTL complexity.

Use Scenario: Position loop buffer in servo drive controllers operating in harsh factory environments (–40°C to +85°C).

IC Role / Device Role / Timing Role: Real-time motion profile storage; ZZ sleep mode activated during idle periods to meet <1W thermal envelope.

Use Value: Industrial-grade VDD/VDDQ tolerance (±5%) and IZZ ≤70mA guarantee stable operation despite 12V rail ripple and ambient temperature swings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-167AXC	256K × 32-bit, 167MHz, 3.3V; supports QDR-II interface but lacks LBO-configurable burst order.	Higher bandwidth but wider bus - requires PCB redesign if replacing 18-bit interface; no linear/interleaved selection.	Select when system demands >600MB/s and can accommodate 32-bit data path; verify ADV/ADSP timing compatibility.
AS7C331024B-15JIN	1M × 18-bit, 150MHz, 3.3V; uses standard asynchronous OE but no pipelined outputs or burst counter.	No burst addressing - each read requires new address setup; higher latency per 4-word transfer.	Choose for cost-sensitive designs where burst efficiency is secondary to density; confirm tOE ≤3.8ns meets timing budget.

Compared with CY7C1371BV33-167AXC and AS7C331024B-15JIN, the 71V67803S150BG uniquely balances 150MHz burst throughput, industrial temperature support, and configurable linear/interleaved addressing - making it optimal for legacy-compatible, thermally constrained embedded systems requiring deterministic timing.

Availability

71V67803S150BG is available at Aetrix Electronics and suitable for networking line cards, DSP co-processors, FPGA protocol accelerators, and industrial motion controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67803S150BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67803S150BG belongs to IDT's 71V67xx family of synchronous SRAMs designed specifically for low-latency, burst-oriented applications in telecom infrastructure and real-time embedded systems.

FAQ

What memory organization does the 71V67803S150BG support?

The 71V67803S150BG is organized as 512K × 18-bit (9Mbit), delivering an 18-bit data bus width optimized for DSP and FPGA interfaces. It does not support the 256K × 36-bit configuration - that variant is implemented in the 71V67603. Pinout and timing parameters are specific to the 512K × 18 mode, as confirmed in Pin Configuration – 512K x 18, PKG100.

Does the 71V67803S150BG support BW3 and BW4 byte write enables?

No, the 71V67803S150BG does not support BW3 and BW4. Per Pin Definitions Note 1 in the official datasheet, "BW3 and BW4 are not applicable for the IDT71V67803." Only BW1 and BW2 are functional, controlling I/O0–I/O8/I/OP1 and I/O9–I/O17/I/OP2 respectively. This is reflected in both the 100-pin TQFP and BGA pinouts.

What is the role of the LBO pin on the 71V67803S150BG?

The LBO (Linear Burst Order) pin on the 71V67803S150BG statically selects burst address sequencing: LBO = LOW enables linear mode (00→01→10→11), while LBO = HIGH enables interleaved mode (00→01→11→10). As stated in Pin Definitions, LBO is a static input and must not change state during operation - it is sampled at initialization and defines the entire burst behavior.

How does sleep mode function on the 71V67803S150BG?

Sleep mode on the 71V67803S150BG is activated by driving ZZ HIGH asynchronously. This gates the internal CLK and reduces supply current to ≤70mA (industrial grade) while guaranteeing data retention. Per AC Electrical Characteristics Table 16, tZZR (recovery time) is 100ns - meaning full operation resumes within one clock cycle after ZZ returns LOW.

Is the 71V67803S150BG compatible with 166MHz operation?

No, the 71V67803S150BG is rated for 150MHz maximum operation (3.8ns access time), as indicated by the "S150" suffix and confirmed in Features and AC Electrical Characteristics tables. The 166MHz/3.5ns specification applies only to the 71V67603 and 71V67803 variants with "S166" suffix. Using 71V67803S150BG at 166MHz violates timing guarantees and may cause data corruption.

71V67803S150BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67803S150BG FAQ

1.How can I place an order for 71V67803S150BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67803S150BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67803S150BG reliable?

The price and inventory of 71V67803S150BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S150BG is usually 5 days.

3.What payment methods are accepted for 71V67803S150BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67803S150BG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67803S150BG?

71V67803S150BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67803S150BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67803S150BG?

For technical support, including 71V67803S150BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S150BG requirements.

6.How does Aetrix verify that 71V67803S150BG is sourced from the original manufacturer or authorized distributors?

All 71V67803S150BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S150BG meets industry standards.

7.What is the process for return or replacement of 71V67803S150BG?

All 71V67803S150BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S150BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67803S150BG part is unused and in its original packaging.

Return procedure for 71V67803S150BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…