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Renesas 71V67803S150BG8
- Part No.:
- 71V67803S150BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67803S150BG8.pdf
- Description:
- IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,792
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Product details
Overview
71V67803S150BG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V67803S150BG8 datasheet, 71V67803S150BG8 pinout, 71V67803S150BG8 application, or 71V67803S150BG8 equivalent, key selection criteria include burst timing compliance, ZZ sleep mode current (≤70mA), 100-pin TQFP package compatibility, and absence of BW3/BW4 pins per device-specific pin definition.
Technical Context
This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state - no runtime reconfiguration allowed. The self-timed write cycle uses GW or BWE/BWx to gate write registers, with output drivers disabled during active writes.
Power management includes three distinct low-power states: CMOS standby (ISB1 ≤70mA), clock-running standby (ISB2 ≤175mA), and full sleep mode (IZZ ≤70mA) activated by asynchronous ZZ HIGH. Pipelined read outputs deliver first valid data one clock cycle after address latch, enabling deterministic latency in burst transfers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit total); supports 18-bit wide data paths without external multiplexing. |
| Clock Frequency | 150MHz max; enables 6.7ns clock cycle time for timing-critical burst reads/writes. |
| Access Time | 3.8ns clock-to-data (tCD); guarantees pipelined output validity within one clock after CLK rise. |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate rails allow I/O voltage domain isolation. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained operation in base station and router environments. |
| Sleep Current | IZZ ≤70mA at VDD = max; enables rapid wake-up from ZZ HIGH with no configuration loss. |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin; eliminates external address generation logic. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67803S150BG8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK when ADSP/ADSC active LOW. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE LOW + CS1 LOW + CS0 HIGH enables device; prevents partial selection. |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW writes all 18 bits; BWE enables BW1/BW2 (byte 0–8 and 9–17); BW3/BW4 not connected per datasheet note. |
| CLK, ADV, ADSP, ADSC | Burst Timing Inputs | CLK drives all registers; ADV advances burst counter; ADSP/ADSC load address register synchronously. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; registered input/output paths ensure setup/hold compliance. |
| ZZ, LBO, OE | Power & Mode Controls | ZZ HIGH forces full sleep (IZZ ≤70mA); LBO selects burst order statically; OE disables outputs asynchronously. |
Key Features
| Feature | Design Value |
|---|---|
| Single-cycle deselect | Device enters high-Z output state within one CLK cycle after chip disable, eliminating bus contention. |
| Pipelined burst reads | First output valid on second CLK edge; subsequent words appear on each rising edge - no wait states. |
| Self-timed write cycle | Internal timing logic completes write without external strobe; reduces controller overhead and timing margin risk. |
| Asynchronous sleep mode | ZZ HIGH immediately gates internal clock and cuts power; wake-up requires only ZZ LOW and stable clocks. |
| Industrial temperature support | Validated operation from –40°C to +85°C with full AC/DC specs; suitable for uncontrolled ambient deployments. |
Applications
| Telecom Line Card Buffer | Network Processor Cache |
|---|---|
|
Use Scenario: High-throughput packet buffering between SERDES PHY and packet classifier ASIC. IC Role / Device Role / Timing Role: Synchronous SRAM providing 150MHz burst-access storage for ingress/egress queues. Use Value: Single-cycle deselect prevents bus turnaround delay; pipelined outputs sustain 600MB/s throughput (150MHz × 4 bytes). |
Use Scenario: Instruction/data cache for multi-core network processor running deep packet inspection. IC Role / Device Role / Timing Role: Low-latency, burst-capable memory interfacing directly to processor's synchronous bus. Use Value: 3.8ns tCD ensures deterministic instruction fetch timing; ZZ sleep mode reduces idle power by >80% vs active standby. |
| Baseband Digital Front-End | Radar Signal Processing Buffer |
|
Use Scenario: Real-time FFT window storage and coefficient lookup in LTE/5G baseband FPGAs. IC Role / Device Role / Timing Role: Dual-port accessible memory (via burst sequencing) for parallel read/write pipelines. Use Value: Linear burst mode aligns with sequential FFT bin addressing; 18-bit width matches Q15 fixed-point data format. |
Use Scenario: Chirp sample buffering and Doppler processing in automotive radar SoCs. IC Role / Device Role / Timing Role: High-reliability SRAM operating continuously at 85°C ambient in engine compartment. Use Value: Industrial temp rating and 70mA sleep current enable always-on radar detection with minimal thermal impact. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1372DV18-167BZI | 167MHz max, 165-ball fBGA only; no TQFP option; supports JTAG boundary scan. | Requires PCB redesign for BGA; preferred where testability and higher speed outweigh layout cost. | Select when 167MHz timing margin is required and BGA assembly is available. |
| AS7C31026B-15JIN | 15ns async access; no burst mode, no pipelining, no ZZ sleep; 100-pin TQFP compatible. | Lacks burst efficiency and low-power sleep - suitable only for non-burst, low-duty-cycle control buffers. | Select only for legacy designs where synchronous timing and power savings are not required. |
Compared with CY7C1372DV18-167BZI and AS7C31026B-15JIN, the 71V67803S150BG8 uniquely balances 150MHz burst performance, TQFP availability, and industrial-grade sleep mode - making it optimal for cost-sensitive, thermally constrained telecom edge hardware.
Availability
71V67803S150BG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial networking, and radar signal processing requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.
Supply support for 71V67803S150BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.
The 71V67803S150BG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for burst-oriented, low-latency memory subsystems in telecom and networking equipment.
FAQ
What is the maximum supported clock frequency for the 71V67803S150BG8?
The 71V67803S150BG8 is rated for 150MHz operation, corresponding to a 6.7ns clock cycle time and 3.8ns clock-to-data (tCD) access time. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3V ±5%. Exceeding 150MHz violates AC specifications and may cause timing violations in burst or pipelined modes.
Does the 71V67803S150BG8 support both linear and interleaved burst modes?
Yes, the 71V67803S150BG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved order is used. LBO is a static input - it must be set before operation begins and must not change during active burst cycles.
Are BW3 and BW4 pins functional on the 71V67803S150BG8?
No, BW3 and BW4 are not applicable for the 71V67803S150BG8. As explicitly stated in the datasheet (Note 1, Pin Description Summary), these pins are reserved and unused for this device variant. Only BW1 and BW2 are implemented to control byte writes for the lower and upper 9-bit segments of the 18-bit data bus.
What is the power consumption of the 71V67803S150BG8 in sleep mode?
In full sleep mode (activated by driving ZZ HIGH), the 71V67803S150BG8 draws ≤70mA of supply current (IZZ) at maximum VDD. This is specified for both commercial and industrial grades. Sleep mode retains all data and allows immediate wake-up upon ZZ returning LOW, with no reinitialization required.
Which package types are available for the 71V67803S150BG8?
The 71V67803S150BG8 is packaged exclusively in a 100-pin thin quad flatpack (TQFP), JEDEC standard, 14mm × 20mm body size, 0.5mm lead pitch. While the broader 71V67603/71V67803 family offers BGA variants, the "BG8" suffix specifically denotes the TQFP package - confirmed by the "PKG100" designation in all relevant pin diagrams and ordering information.
71V67803S150BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67803S150BG8 FAQ
1.How can I place an order for 71V67803S150BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S150BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S150BG8 reliable?
The price and inventory of 71V67803S150BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S150BG8 is usually 5 days.
3.What payment methods are accepted for 71V67803S150BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67803S150BG8 transactions.
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4.How is shipping managed for 71V67803S150BG8?
71V67803S150BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67803S150BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67803S150BG8?
For technical support, including 71V67803S150BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S150BG8 requirements.
6.How does Aetrix verify that 71V67803S150BG8 is sourced from the original manufacturer or authorized distributors?
All 71V67803S150BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S150BG8 meets industry standards.
7.What is the process for return or replacement of 71V67803S150BG8?
All 71V67803S150BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S150BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S150BG8 part is unused and in its original packaging.
Return procedure for 71V67803S150BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S150BG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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