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Renesas 71V67803S150BQ
- Part No.:
- 71V67803S150BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67803S150BQ.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,564
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Product details
Overview
71V67803S150BQ from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global and byte-level write control, and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.
For engineers reviewing the 71V67803S150BQ datasheet, 71V67803S150BQ pinout, 71V67803S150BQ application, or 71V67803S150BQ equivalent, key selection criteria include burst timing compliance, ZZ sleep mode current (≤70mA), VDDQ I/O supply isolation, TQFP-100 package footprint, and absence of BW3/BW4 pins per device-specific pin definition.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-generates four sequential addresses per initial access, enabling pipelined read/write cycles without external sequencing logic.
The device uses separate 3.3V core (VDD) and I/O (VDDQ) supplies, supports asynchronous ZZ sleep entry (high-Z I/O, ≤70mA ISB2), and provides single-cycle deselect via CE/CS0/CS1 decoding. Byte write capability is limited to BW1 and BW2 only-BW3 and BW4 are not applicable for 71V67803.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mb); optimized for 18-bit data bus width in telecom and packet processing systems. |
| Clock Frequency | 150MHz max; enables 6.7ns clock cycle time-critical for meeting tight timing budgets in high-throughput switching ASIC interfaces. |
| Access Time | 3.8ns clock-to-data (tCD); guarantees valid output within one clock cycle after CLK high, supporting pipelined burst reads. |
| Supply Voltages | VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; independent I/O rail allows voltage translation and noise isolation from core logic. |
| Sleep Current | IZZ ≤ 70mA (industrial temp); low-power retention during idle periods in power-constrained line card designs. |
| Burst Mode | Linear or interleaved via LBO pin; determines address sequence order for four-word bursts-directly impacts cache line alignment efficiency. |
| Write Control | Global Write (GW) + Byte Write Enable (BWE) + BW1/BW2 only; enables selective 9-bit word updates without disturbing adjacent bytes. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated for 512K × 18 configuration per PKG100 drawing (Rev. 6.42, p.6).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus; A0–A17 fully decoded for 512K depth; A18 not used in 512K×18 mode. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip memory banking. |
| GW, BWE, BW1, BW2 | Write Control Inputs | GW initiates full 18-bit write; BWE gates BW1/BW2; BW1 writes I/O0–I/O8/I/OP1, BW2 writes I/O9–I/O17/I/OP2. |
| ADV, ADSP, ADSC | Burst Address Control | ADSP/ADSC load address register on falling edge; ADV advances internal burst counter-enables burst chaining without CPU intervention. |
| LBO | Burst Order Select | Asynchronous input: LBO = LOW → linear burst; LBO = HIGH → interleaved burst; must be static during operation. |
| ZZ | Sleep Mode Input | Asynchronous HIGH entry to full sleep; disables CLK internally, reduces current to ≤70mA while retaining data. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18 data bits + 2 parity bits; registered I/O paths synchronized to CLK rising edge; high-Z when OE HIGH or device deselected. |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS pins are segregated-mandatory for signal integrity and EMI control in dense PCB layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data available on second CLK rising edge; eliminates wait states and sustains 150MHz throughput across burst sequences. |
| Single-Cycle Deselect | Device enters high-Z state within one clock cycle after CE/CS deassertion-prevents bus contention in multi-SRAM systems. |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse generation; simplifies FPGA/CPU interface design and reduces timing margin risk. |
| Independent VDDQ Supply | Allows I/O voltage to track downstream logic (e.g., 3.3V FPGA I/O banks) while core runs at same nominal voltage-improves noise immunity. |
| Industrial Temperature Range | –40°C to +85°C operation certified per datasheet; suitable for uncontrolled environments like outdoor base stations and industrial controllers. |
Applications
| Telecom Line Cards | Network Packet Processors |
|---|---|
|
Use Scenario: Buffering ingress/egress packet headers and metadata in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: High-speed dual-port-like buffer with burst read/write; synchronizes between serdes PHY and packet classifier ASIC. Use Value: 150MHz clock rate and pipelined outputs sustain 2.7 Gbps sustained bandwidth-matching OC-192 line rates without stalling. |
Use Scenario: Storing forwarding tables and temporary packet payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Cache memory for TCAM lookup results; accessed via burst-aligned address sequences from search engine. Use Value: Linear burst mode aligns with 64-byte cache line fetches; single-cycle deselect prevents pipeline bubbles during context switches. |
| Industrial PLC Controllers | Radar Signal Processing |
|
Use Scenario: Real-time I/O mapping and cyclic process data exchange in modular automation backplanes. IC Role / Device Role / Timing Role: Deterministic latency memory for cyclic scan buffers; interfaced to ARM Cortex-R or PowerPC real-time cores. Use Value: ZZ sleep mode cuts standby current to ≤70mA-extending uptime in fanless, convection-cooled enclosures. |
Use Scenario: Storing intermediate FFT coefficients and chirp buffers in pulsed-Doppler radar front ends. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for time-critical DSP pipelines; synchronized to ADC/DAC clocks. Use Value: 3.8ns tCD and 0ns tCLZ ensure output stability before next sample clock edge-reducing timing closure effort in FPGA-based radar IP. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV18 | 512K × 18, 166MHz, 3.3V, supports BW3/BW4; different pinout (119-ball BGA only); no TQFP option. | Requires PCB redesign due to BGA-only packaging; higher speed margin but lacks 100-pin TQFP compatibility. | Select when board space permits BGA and 166MHz timing headroom is required; avoid if legacy TQFP layout must be preserved. |
| AS7C35128P | 512K × 18, 133MHz, 3.3V, no burst mode; asynchronous OE; only GW write (no byte write); TQFP-100 compatible. | Lacks ADV/ADSP/ADSC burst control and pipelined outputs-requires external address sequencing logic and adds 1–2 cycle latency per access. | Select for cost-sensitive, non-burst applications where 133MHz is sufficient and simplified control logic outweighs performance loss. |
Compared with CY7C1371BV18 and AS7C35128P, the 71V67803S150BQ uniquely delivers 150MHz burst performance in pin-compatible TQFP-100 packaging with full byte-write support-making it optimal for drop-in upgrades of legacy IDT-based designs requiring industrial temp and low-latency pipelining.
Availability
71V67803S150BQ is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-lifecycle support, and industrial-grade reliability.
Supply support for 71V67803S150BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.
The 71V67803S150BQ belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in networking and real-time embedded systems demanding deterministic timing and industrial temperature resilience.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V67803S150BQ?
The 71V67803S150BQ is rated for 150MHz operation with a guaranteed clock-to-data access time (tCD) of 3.8ns. This specification applies across the industrial temperature range (–40°C to +85°C) and is validated under VDD = VDDQ = 3.3V ±5%. The device also supports 133MHz (4.2ns) and 166MHz (3.5ns) variants-but the S150 suffix confirms the 150MHz grade. Timing compliance requires adherence to setup/hold windows defined in Table 16 of the datasheet.
Does the 71V67803S150BQ support byte write functionality, and which byte lanes are active?
Yes, the 71V67803S150BQ supports byte write via BW1 and BW2 inputs only. BW1 controls I/O0–I/O8 and I/OP1 (first 9-bit byte); BW2 controls I/O9–I/O17 and I/OP2 (second 9-bit byte). Per datasheet Note 1 on page 3, BW3 and BW4 are explicitly not applicable for the 71V67803 family-including the 71V67803S150BQ-due to its 512K × 18 organization. Global Write (GW) remains fully functional for full-word writes.
How does the LBO pin affect burst addressing behavior in the 71V67803S150BQ?
The LBO (Linear Burst Order) pin selects between two burst address sequences: when LBO = LOW, the device executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). This selection is static-LBO must not change during active operation. The sequence determines how A0/A1 advance during four-word bursts and directly impacts cache line alignment efficiency in processor-facing applications. LBO is asynchronous and internally pulled to VDD if left floating.
What power supply configurations are required for proper operation of the 71V67803S150BQ?
The 71V67803S150BQ requires two independent 3.3V supplies: VDD (core logic, pins 11, 22, 36, 45, 54, 63, 72, 81, 90) and VDDQ (I/O drivers, pins 47, 56, 65, 74, 83, 92). Both must be regulated to 3.3V ±5% and decoupled per datasheet recommendations. VSS (ground) pins are distributed across the perimeter for low-inductance return paths. No power sequencing is mandated, but VDD and VDDQ must ramp before applying signals to input pins.
Is the 71V67803S150BQ pin-compatible with other members of the 71V67603/71V67803 family, such as the 71V67603S150BQ?
No-the 71V67803S150BQ (512K × 18) and 71V67603S150BQ (256K × 36) share the same TQFP-100 package and pinout *mechanically*, but differ electrically in address and data pin mapping. For example, A18 is unused in 71V67803 but active in 71V67603; I/O18–I/O31 and I/OP3–I/OP4 are NC in 71V67803 but functional in 71V67603. Direct substitution without PCB revision is not supported-designers must verify netlist connectivity against respective PKG100 drawings (p.6 vs p.5).
71V67803S150BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67803S150BQ FAQ
1.How can I place an order for 71V67803S150BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S150BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S150BQ reliable?
The price and inventory of 71V67803S150BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S150BQ is usually 5 days.
3.What payment methods are accepted for 71V67803S150BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67803S150BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67803S150BQ?
71V67803S150BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67803S150BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67803S150BQ?
For technical support, including 71V67803S150BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S150BQ requirements.
6.How does Aetrix verify that 71V67803S150BQ is sourced from the original manufacturer or authorized distributors?
All 71V67803S150BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S150BQ meets industry standards.
7.What is the process for return or replacement of 71V67803S150BQ?
All 71V67803S150BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S150BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S150BQ part is unused and in its original packaging.
Return procedure for 71V67803S150BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S150BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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