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Renesas 71V67803S150BQ8
- Part No.:
- 71V67803S150BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67803S150BQ8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,016
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Product details
Overview
71V67803S150BQ8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (–40°C to +85°C) in a 100-pin TQFP package. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.
For engineers reviewing the 71V67803S150BQ8 datasheet, 71V67803S150BQ8 pinout, 71V67803S150BQ8 application, or 71V67803S150BQ8 equivalent, key selection criteria include burst timing compliance, ZZ sleep-mode current (≤70mA), VDDQ I/O supply tolerance (±5%), and compatibility with 3.3V synchronous bus architectures requiring pipelined read latency and self-timed write cycles.
Technical Context
This SRAM implements a synchronous interface with dual chip-select logic (CS0 active-HIGH, CS1 active-LOW), ADSP/ADSC address status inputs for processor/cache coherency, and ADV-controlled burst advance. Its internal architecture includes registered address/data paths, a binary burst counter, and separate enable registers for OE, CE, and GW-enabling deterministic timing under 150MHz clocking.
The device uses a high-performance CMOS process and supports two memory configurations: 512K × 18 (addressable via A0–A18) and 256K × 36 (not applicable to 71V67803 per datasheet note). BW3 and BW4 are explicitly disabled for this variant, leaving only BW1 and BW2 active for 9-bit byte writes on I/O0–I/O17 and I/OP1–I/OP2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (983,040 bits); supports 18-bit data bus width with A0–A18 addressing - enables compact 16-bit/18-bit system interfaces without glue logic. |
| Max Clock Frequency | 150 MHz (tCYC = 6.7 ns); guarantees full-speed operation in high-throughput packet buffering applications with predictable cycle-to-cycle timing. |
| Access Time | 3.8 ns clock-to-data (tCD); defines minimum valid data hold window after CLK rising edge - critical for setup/hold margin in FPGA- or ASIC-connected systems. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); independent power domains allow I/O voltage tracking with host logic while maintaining core stability. |
| Sleep Mode Current | IZZ ≤ 70 mA (industrial temp); achieved when ZZ = HIGH - reduces standby power in always-on telecom infrastructure during idle periods. |
| Burst Control | LBO selects linear or interleaved burst order; ADV = LOW enables auto-incrementing address counter - eliminates external address generation logic for sequential reads. |
| Write Enable Logic | GW (global) + BWE + BW1/BW2 (byte-selects); BW3/BW4 not implemented - simplifies PCB routing and firmware by removing unused pins from design. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner cut; thermal pad not present. Compatible with standard reflow profiles for lead-free assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC assertion; A0–A18 fully decode 512K × 18 space - no address multiplexing required. |
| CLK | System Clock Input | Single-ended, non-inverted reference for all synchronous operations; all timing parameters referenced to rising edge - enables tight skew control in backplane designs. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input hierarchical enable: CE must be LOW, CS0 HIGH, CS1 LOW for selection - provides robust noise immunity and multi-device decoding flexibility. |
| GW, BWE, BW1, BW2 | Write Control Inputs | GW overrides BWE/BWx; BWE gates BW1/BW2; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - enables precise 9-bit sub-word writes without disturbing adjacent bytes. |
| OE | Asynchronous Output Enable | Drives I/O pins to high-Z when HIGH; allows shared bus arbitration without clock-domain synchronization - essential for multi-master systems. |
| ZZ | Asynchronous Sleep Mode | Internally pulls to VSS if floating; asserts full power-down when HIGH - eliminates need for external power sequencers in low-power states. |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O (18-bit + 2 parity) | Registered bidirectional bus; pipelined output register delivers data one cycle after CLK - decouples memory latency from processor pipeline stalls. |
| VDD, VDDQ, VSS | Power/Ground | Dedicated VDD (core), VDDQ (I/O), and multiple VSS pins distributed across package - minimizes simultaneous switching noise and ensures stable signal integrity at 150MHz. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | Output data registered on CLK rising edge with tCD = 3.8 ns - eliminates combinational delay path, enabling reliable timing closure in high-speed FPGA interfaces. |
| Single-Cycle Deselect | Outputs enter high-Z within one CLK cycle after CE/CS deassertion - prevents bus contention during rapid device switching in multi-SRAM systems. |
| Self-Timed Write Cycle | Internal write completion detection eliminates external write-strobe generation - reduces controller logic complexity and improves write throughput predictability. |
| Linear/Interleaved Burst Mode | LBO pin statically configures burst address sequence (linear: 00→01→10→11; interleaved: 00→01→11→10) - matches cache line layouts in MIPS/PowerPC-based processors. |
| Industrial Temperature Range | Specified operation from –40°C to +85°C - qualified for deployment in uncontrolled environments such as outdoor base stations and industrial gateways. |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as frame buffer with burst-read capability for DMA engines. Use Value: 150MHz clock rate and pipelined outputs deliver sustained 2.7 GB/s read bandwidth, reducing packet drop rates under 10Gbps line-rate traffic. |
Use Scenario: Caching protocol headers and signaling metadata in DSLAM or OLT line cards. IC Role / Device Role / Timing Role: Synchronous cache memory interfaced to TI C64x DSP or ARM-based control processors. Use Value: Single-cycle deselect and ZZ sleep mode enable rapid context switching and <100µs wake-up latency - meeting ITU-T G.984.3 GPON timing constraints. |
| Baseband Processing Memory | Industrial PLC Data Logging |
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Dual-port accessible SRAM supporting concurrent read (DSP) and write (FPGA accelerator) access via burst control. Use Value: 512K × 18 organization aligns with 16-bit IQ sample widths; 3.3V I/O compatibility eliminates level-shifting components with Xilinx Zynq PS/PL interfaces. |
Use Scenario: Buffering sensor acquisition data in real-time motion control systems prior to SD card write. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for ARM Cortex-M7 microcontrollers running FreeRTOS. Use Value: Industrial temp rating and 70mA IZZ ensure reliable operation in factory-floor enclosures; tOHZ = 3.8 ns enables safe handoff to SPI flash controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-167AXC | 256K × 32 organization, 167MHz max, 165-ball fBGA only - no TQFP option; supports JTAG boundary scan. | Requires wider data bus (32-bit) and different PCB footprint; better suited for high-density SoC interposers than discrete line-card designs. | Select when migrating to higher-density 32-bit systems and board space permits BGA rework; avoid for drop-in 18-bit bus replacement. |
| AS7C33128PFSI-15 | 1M × 16 organization, 150MHz, 100-pin TQFP; no burst mode or ADV/LBO; asynchronous OE only. | Lacks pipelined outputs and burst addressing - introduces 1–2 cycle latency penalty per read; simpler control but lower peak bandwidth. | Choose for cost-sensitive industrial controllers where deterministic latency > peak throughput; verify timing margins with tOE = 4.2 ns. |
Compared with CY7C1371BV33-167AXC and AS7C33128PFSI-15, the 71V67803S150BQ8 uniquely balances 18-bit bus alignment, 100-pin TQFP accessibility, and full burst/pipeline functionality - making it optimal for legacy telecom upgrades where layout reuse and timing predictability are mandatory.
Availability
71V67803S150BQ8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, baseband processing memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71V67803S150BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly Integrated Device Technology) is a global semiconductor leader specializing in embedded solutions, analog, and memory products for industrial, automotive, and communications markets.
The 71V67803 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in telecom infrastructure, networking equipment, and real-time embedded systems.
FAQ
What memory configuration does the 71V67803S150BQ8 support?
The 71V67803S150BQ8 is configured as 512K × 18-bit (983,040 bits), using address lines A0–A18. It does not support the 256K × 36-bit configuration - that variant is implemented in the 71V67603. BW3 and BW4 are explicitly disabled per datasheet note, confirming its 18-bit byte-write structure.
Does the 71V67803S150BQ8 support both linear and interleaved burst modes?
Yes, the 71V67803S150BQ8 supports both burst modes via the LBO pin: LBO = LOW selects linear order (00→01→10→11), and LBO = HIGH selects interleaved order (00→01→11→10). The burst sequence wraps automatically after four words, and LBO must remain static during operation per datasheet specification.
What is the function of the ZZ pin on the 71V67803S150BQ8?
The ZZ pin on the 71V67803S150BQ8 is an asynchronous sleep-mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤70 mA (industrial grade), preserving data retention. If left unconnected, ZZ is internally pulled to VSS, keeping the device in active mode - no external pull-up is required.
How does the 71V67803S150BQ8 handle write operations with byte-level granularity?
The 71V67803S150BQ8 enables byte-level writes using BWE (byte write enable) and BW1/BW2. BW1 controls I/O0–I/O8 and I/OP1 (first 9-bit byte); BW2 controls I/O9–I/O17 and I/OP2 (second 9-bit byte). GW overrides all byte controls to write all 18 bits simultaneously - providing flexible write granularity without external gating logic.
Is the 71V67803S150BQ8 compatible with 3.3V-only system designs?
Yes, the 71V67803S150BQ8 requires only 3.3V supplies: VDD = 3.3V ±5% for core logic and VDDQ = 3.3V ±5% for I/O drivers. Its VIH/VIL thresholds (2.0V/0.8V) and 3.3V-compatible output swing ensure interoperability with standard 3.3V LVTTL and LVCMOS interfaces without level shifters.
71V67803S150BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67803S150BQ8 FAQ
1.How can I place an order for 71V67803S150BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67803S150BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67803S150BQ8 reliable?
The price and inventory of 71V67803S150BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S150BQ8 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that 71V67803S150BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V67803S150BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S150BQ8 meets industry standards.
7.What is the process for return or replacement of 71V67803S150BQ8?
All 71V67803S150BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S150BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67803S150BQ8 part is unused and in its original packaging.
Return procedure for 71V67803S150BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67803S150BQ8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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