Renesas 71V67803S150BQI

Overview

71V67803S150BQI from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (−40°C to +85°C) in a 100-pin TQFP package. It serves as high-speed cache or buffer memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67803S150BQI datasheet, 71V67803S150BQI pinout, 71V67803S150BQI application, or 71V67803S150BQI equivalent, key selection criteria include burst timing compliance, ZZ-controlled sleep mode current (≤70mA), 3.3V I/O supply (VDDQ) tolerance, and compatibility with 150MHz system clocks in pipeline-constrained embedded memory subsystems.

Technical Context

The 71V67803S150BQI implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO (LOW = linear, HIGH = interleaved); BW3 and BW4 are not implemented per datasheet note.

It uses self-timed write cycles gated by GW (global) or BWE + BW1/BW2 (byte-select), with asynchronous OE and ZZ controls. Pipelined output registers deliver first data one clock cycle after address latch, enabling deterministic 150MHz read throughput without wait states in burst mode.

Key Specifications

Pinout & Package

71V67803S150BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pin 14 may be tied to VDD or left unconnected; Pin 64 (ZZ) must be actively driven or pulled to VSS for sleep control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C35128P, the 71V67803S150BQI uniquely delivers 150MHz pipelined burst operation with configurable linear/interleaved addressing and ADV-suspend-critical for real-time packet and signal processing where deterministic latency and burst adaptability are non-negotiable.

Availability

71V67803S150BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC backplane memory applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67803S150BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67803S150BQI belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in telecom infrastructure and real-time embedded control.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67803S150BQI?

The 71V67803S150BQI is rated for 150MHz operation with a guaranteed clock-to-data access time (tCD) of 3.8ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and is validated under VDD/VDDQ = 3.3V ±5%. The device also supports 133MHz (4.2ns) and 166MHz (3.5ns) variants, but the S150 suffix denotes the 150MHz grade.

Does the 71V67803S150BQI support both linear and interleaved burst modes, and how is this configured?

Yes, the 71V67803S150BQI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved order is used. LBO is a static input and must remain stable during operation-its state is sampled at power-up or after ZZ recovery to configure the internal burst counter behavior.

Are BW3 and BW4 functional on the 71V67803S150BQI?

No, BW3 and BW4 are not applicable to the 71V67803S150BQI. As explicitly stated in the datasheet (Note 1, Pin Description Summary), these pins are reserved and unused for the 512K × 18 configuration. Only BW1 and BW2 are active, controlling the lower and upper 9-bit bytes respectively. This differs from the 256K × 36 variant (71V67603), which uses all four BWx signals.

What is the purpose of the ADV pin on the 71V67803S150BQI, and how does it affect burst operation?

The ADV (Burst Address Advance) pin controls whether the internal burst counter increments after the initial address is loaded. When ADV is LOW, the counter advances automatically for subsequent burst cycles; when HIGH, burst address progression is suspended, holding the current address for repeated access. This allows precise control over burst sequencing-e.g., pausing mid-burst to insert a priority write-without terminating the burst mode.

How does the 71V67803S150BQI handle power-down and sleep modes, and what is the typical current draw in each state?

The 71V67803S150BQI supports two low-power states: CMOS standby (ISB2 = 150mA at 150MHz, deselected) and full sleep mode (IZZ ≤ 70mA) activated by driving ZZ HIGH. In sleep mode, the internal clock is gated, core logic is halted, and data retention is guaranteed. VDD and VDDQ supplies must remain active; no power sequencing is required, but I/O pins must not exceed VDDQ during ramp-up.