Renesas 71V67803S166BG

Overview

71V67803S166BG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz clock operation (3.5ns access). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and FPGA co-processor memory subsystems.

For engineers reviewing the 71V67803S166BG datasheet, 71V67803S166BG pinout, 71V67803S166BG application, or 71V67803S166BG equivalent, key selection criteria include burst timing compliance, ZZ sleep mode current (≤70mA), VDDQ I/O supply tolerance (±5%), and TQFP-100 package compatibility with legacy PCB layouts.

Technical Context

The 71V67803S166BG implements a synchronous dual-port architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per ADV assertion, with LBO selecting linear or interleaved order - critical for cache line alignment in RISC processors.

Burst writes are self-timed using GW or BWE/BWx signals, eliminating external write pulse generation. Pipelined output registers deliver first data one clock cycle after address latch, enabling sustained 166MHz throughput without wait states in burst-read sequences.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated for 512K × 18 configuration per IDT document 5310 drw 03.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1375BV18-167BAXI and AS7C35128P-15TIN, the 71V67803S166BG delivers deterministic 166MHz burst performance with minimal controller logic, making it optimal for legacy IDT-based designs requiring seamless timing continuity and industrial temperature resilience.

Availability

71V67803S166BG is available at Aetrix Electronics and suitable for high-speed network buffering, FPGA co-processor memory, and industrial PLC motion control requiring stable component supply across extended lifecycle programs.

Supply support for 71V67803S166BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory, and interface solutions for communications and computing infrastructure.

The 71V67803S166BG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, test equipment, and industrial automation.

FAQ

What is the maximum operating frequency of the 71V67803S166BG?

The 71V67803S166BG supports a maximum clock frequency of 166MHz, corresponding to a 6.0ns minimum clock cycle time (tCYC). This is validated under commercial conditions with 3.3V ±5% supply and specified AC timing margins. At this rate, the device achieves 3.5ns clock-to-data (tCD) access for pipelined outputs, enabling real-time data streaming in 10G Ethernet and FPGA acceleration applications. The 71V67803S166BG does not support overclocking beyond 166MHz.

Does the 71V67803S166BG support both linear and interleaved burst modes?

Yes, the 71V67803S166BG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the internal burst counter follows linear order (00→01→10→11); when HIGH, it follows interleaved order (00→01→11→10). This selection is static and must remain stable during operation. The 71V67803S166BG implements this behavior per IDT documentation 5310 tbl 14 and 5310 tbl 15, and LBO has no effect on non-burst operations.

What are the valid write control options for the 71V67803S166BG?

The 71V67803S166BG supports global write (GW), byte write enable (BWE), and individual byte write selects BW1 and BW2. BW3 and BW4 are explicitly not applicable per IDT note in 5310 tbl 01. BW1 controls I/O0–I/O8 and I/OP1 (9 bits), BW2 controls I/O9–I/O17 and I/OP2 (9 bits). All write operations are synchronous to CLK, and GW takes precedence over BWE/BWx. The 71V67803S166BG requires proper setup/hold timing relative to CLK for reliable write initiation.

What is the power consumption of the 71V67803S166BG in sleep mode?

In full sleep mode (ZZ = HIGH), the 71V67803S166BG draws ≤70μA of supply current (IZZ) under industrial temperature conditions (–40°C to +85°C), as specified in IDT 5310 tbl 09. This ultra-low current preserves data retention while minimizing system standby power. The 71V67803S166BG enters sleep immediately upon ZZ assertion with no clock or sequencing requirements, and recovers in ≤100ns (tZZR) after ZZ returns LOW.

Which package variants are available for the 71V67803S166BG?

Per IDT documentation, the 71V67803S166BG is packaged exclusively in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. The "BG" suffix in the part number denotes this TQFP package. While the broader 71V67603/71V67803 family also offers 119-ball BGA and 165-fine-pitch BGA variants, the 71V67803S166BG specifically refers to the TQFP-100 version and is not available in BGA configurations.