Renesas 71V67803S166BG8

Overview

71V67803S166BG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz clock operation (3.5ns access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67803S166BG8 datasheet, 71V67803S166BG8 pinout, 71V67803S166BG8 application, or 71V67803S166BG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70µA), VDDQ I/O supply decoupling requirements, and TQFP-100 vs. BGA-119 package migration constraints.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state - no runtime reconfiguration. The device uses dual power domains: 3.3V core (VDD) and 3.3V I/O (VDDQ), with separate ground planes for noise isolation.

Write operations are self-timed and support four distinct modes: global write (GW active), byte writes (BWE + BW1/BW2), and combinations thereof. OE is asynchronous, enabling fast output disable; ZZ is asynchronous sleep control, gating CLK internally to reduce ISB2 to ≤175mA (166MHz) and IZZ to ≤70µA.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout optimized for signal integrity: VDD/VDDQ and VSS distributed across perimeter; I/Os grouped with local VDDQ/VSS pairs; critical timing pins (CLK, ADV, ADSP, ADSC) isolated from noisy I/O banks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-166AXC and AS7C35128P-166JCIN, the 71V67803S166BG8 provides stricter I/O power domain separation, guaranteed industrial temperature operation, and sub-µA sleep current - making it the sole choice for thermally constrained, always-on infrastructure hardware.

Availability

71V67803S166BG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, baseband signal processing, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V67803S166BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) designs high-performance memory and timing solutions for communications, computing, and industrial markets.

The 71V67803S166BG8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable buffering in carrier-grade networking and baseband infrastructure.

FAQ

What memory organization does the 71V67803S166BG8 support?

The 71V67803S166BG8 is organized as 512K × 18 bits (9Mbit total), with address lines A0–A18 and an 18-bit bidirectional data bus (I/O0–I/O17 plus I/OP1–I/OP2 parity bits). It does not support the 256K × 36 configuration - that variant is implemented in the 71V67603 family member. This fixed 512K × 18 mapping is confirmed in the PKG100 pinout diagrams and truth tables specific to 71V67803.

Does the 71V67803S166BG8 support byte write functionality?

Yes, the 71V67803S166BG8 supports byte-level writes using BWE in conjunction with BW1 and BW2. BW1 controls the lower 9-bit subword (I/O0–I/O8, I/OP1), and BW2 controls the upper 9-bit subword (I/O9–I/O17, I/OP2). Per the datasheet note, BW3 and BW4 are not applicable to the 71V67803S166BG8 - only two byte enables are implemented and validated for this part.

What is the function of the LBO pin on the 71V67803S166BG8?

The LBO (Linear Burst Order) pin on the 71V67803S166BG8 is a static input that selects burst address sequence: LOW configures linear order (00→01→10→11), and HIGH configures interleaved order (00→01→11→10). As stated in the Pin Definitions table, LBO must remain stable during device operation - toggling it mid-burst is undefined and may corrupt data. Its state is sampled at power-up or reset, not dynamically.

How does the ZZ pin affect power consumption in the 71V67803S166BG8?

When ZZ is driven HIGH, the 71V67803S166BG8 enters full sleep mode: the internal clock is gated, core logic is powered down, and supply current drops to IZZ ≤70µA (industrial grade). Data retention is guaranteed across the full temperature range. Unlike standby modes, ZZ sleep requires no clock activity and eliminates dynamic power - critical for battery-backed or thermally limited deployments where the 71V67803S166BG8 remains powered but inactive for extended periods.

Which package variants are available for the 71V67803S166BG8?

The 71V67803S166BG8 is offered in three package types: JEDEC-standard 100-pin TQFP (PKG100), 119-ball BGA (BG119), and 165-fine-pitch BGA (BQ165). The "G8" suffix in the part number specifically denotes the 100-pin TQFP variant. Pinouts differ across packages - for example, BW3/BW4 are NC in TQFP but present in BGA variants - so layout migration requires package-specific footprint validation per the respective drawings (5310 drw 02, 04, 05, 17a, 17b).