Renesas 71V67803S166BQ

Overview

71V67803S166BQ from IDT (Integrated Device Technology) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz operation (3.5ns clock access time). It supports linear/interleaved burst modes via LBO input, features self-timed write with global and byte-level controls, and operates across industrial temperature range (–40°C to +85°C) in JEDEC-standard 100-pin TQFP package. Used in high-speed networking buffers and real-time DSP memory subsystems.

For engineers reviewing the 71V67803S166BQ datasheet, 71V67803S166BQ pinout, 71V67803S166BQ application, or 71V67803S166BQ equivalent, key selection criteria include burst mode timing compliance, ZZ sleep-mode current (≤70mA), VDD/VDDQ supply separation, and absence of BW3/BW4 pins per device-specific pinout - critical for PCB layout and power integrity validation.

Technical Context

The 71V67803S166BQ implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) via static LBO input - no dynamic reconfiguration during operation.

Write operations are fully self-timed: GW enables full 18-bit writes, while BWE + BW1/BW2 support selective byte writes (BW3/BW4 not implemented). Pipelined read outputs deliver first valid data one clock cycle after CLK rising edge, with subsequent burst words aligned to consecutive CLK edges.

Key Specifications

Pinout & Package

71V67803S166BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm lead pitch. Pinout follows PKG100 configuration for 512K × 18 organization; BW3 and BW4 are not connected (NC) per datasheet note.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-166BZXI and AS7C3512P-166JCIN, the 71V67803S166BQ uniquely combines TQFP-100 compatibility, ZZ-controlled sleep mode (≤70mA), and configurable burst ordering - enabling lower-system-power designs without JTAG overhead or BGA rework.

Availability

71V67803S166BQ is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, medical imaging, and DSP accelerator applications requiring stable component supply, long-lifecycle support, and industrial-temperature-grade reliability.

Supply support for 71V67803S166BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions, now part of Renesas Electronics since 2019.

The 71V67803S166BQ belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency, burst-oriented memory subsystems in networking, communications, and real-time embedded systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67803S166BQ?

The 71V67803S166BQ operates at up to 166MHz with a guaranteed clock-to-data access time (tCD) of 3.5ns. This specification applies under commercial conditions (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. At 150MHz and 133MHz, tCD extends to 3.8ns and 4.2ns respectively - all values are production-tested maximums per datasheet Table 16.

Does the 71V67803S166BQ support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V67803S166BQ supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, linear mode is selected; when HIGH, interleaved mode activates. LBO is a static input - it must remain stable during burst operation and is sampled only at power-up or after ZZ recovery; dynamic switching mid-burst is not supported.

What are the power supply requirements for the 71V67803S166BQ, and why are VDD and VDDQ separate?

The 71V67803S166BQ requires two independent 3.3V ±5% supplies: VDD for core logic and VDDQ for I/O circuitry. Separation minimizes noise coupling from switching I/Os into sensitive internal registers and enables optimized decoupling - VDDQ rails can use lower-ESR capacitors near I/O banks, while VDD focuses on clock distribution stability.

How does the ZZ (Sleep Mode) pin function, and what is the typical current draw in sleep mode?

The ZZ pin places the 71V67803S166BQ into full sleep mode when driven HIGH, gating the internal clock and reducing supply current to IZZ ≤70mA (industrial grade) or ≤50mA (commercial grade). Data retention is guaranteed across the full temperature range. ZZ is asynchronous and requires no setup/hold timing relative to CLK - it may be asserted at any time, including during active burst cycles.

Are BW3 and BW4 functional on the 71V67803S166BQ, and what is their status in the 512K×18 configuration?

No, BW3 and BW4 are not functional on the 71V67803S166BQ. Per datasheet Note 1 in Table 11 and Pin Configuration diagrams, these pins are designated NC (No Connect) for the 512K×18 organization. Only BW1 and BW2 are active - BW1 controls I/O0–I/O8/I/OP1 (9 bits), BW2 controls I/O9–I/O17/I/OP2 (9 bits), enabling true 18-bit byte-select capability.