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Renesas 71V67803S166BQG

Name: 71V67803S166BQG
Brand: Renesas
SKU: 71V67803S166BQG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67803S166BQG

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67803S166BQG.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V67803S166BQG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz clock operation (3.5ns access). It supports linear/interleaved burst modes via LBO input, features self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and FPGA co-processor memory interfaces.

For engineers reviewing the 71V67803S166BQG datasheet, 71V67803S166BQG pinout, 71V67803S166BQG application, or 71V67803S166BQG equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDDQ I/O supply isolation, TQFP-100 package compatibility, and absence of BW3/BW4 pins per datasheet note.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-generates four sequential addresses per initial address, supporting both linear and interleaved sequences. Pipelined output registers deliver first data on the second rising CLK edge after ADSP/ADSC assertion.

Write operations are self-timed and support multiple granularity: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW2 only; BW3/BW4 are not applicable for 71V67803). Power management includes asynchronous ZZ sleep mode (IZZ ≤70mA) and CMOS standby (ISB1 ≤70mA), with separate 3.3V core (VDD) and I/O (VDDQ) supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit); supports 18-bit data bus width with no 36-bit configuration - critical for FPGA interface alignment.
Clock Frequency	166MHz max; enables 6ns cycle time (tCYC), directly constraining system bus timing budget.
Access Time	3.5ns clock-to-data (tCD) at 166MHz; defines minimum latency for first valid read output after clock edge.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rails allow noise isolation between logic and data paths.
Operating Temperature	–40°C to +85°C (industrial grade); validated for sustained operation in base station and industrial controller environments.
Sleep Current	IZZ ≤70mA at VDD max; ensures low-power retention during idle periods without external power gating.
Burst Control	LBO pin selects linear vs. interleaved sequence; static configuration must be stable during operation per datasheet requirement.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout optimized for 512K × 18 configuration: A18 address line present; BW3/BW4 omitted; dedicated I/O pins I/O0–I/O17 and I/OP1–I/OP2; ZZ, LBO, ADV, BWE, GW, CE, CS0, CS1, OE, ADSP, ADSC, CLK, and VDD/VDDQ/VSS distributed for signal integrity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit synchronous address bus; A18 enables full 512K depth addressing (2¹⁹ = 524,288 words).
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data path + 2 parity bits; registered I/Os require CLK-synchronized timing for setup/hold compliance.
CLK	System Clock Input	Single-ended clock reference; all synchronous operations (read/write/burst advance) triggered on rising edge.
ADV	Burst Address Advance	Active-Low synchronous control; when LOW, increments internal burst counter; HIGH suspends burst sequence.
LBO	Linear/Interleaved Burst Order	Asynchronous static select; LOW = linear, HIGH = interleaved; must remain stable during active operation.
ZZ	Sleep Mode Enable	Asynchronous HIGH activates full sleep mode; gates internal CLK and reduces current to IZZ ≤70mA.
GW, BWE, BW1–BW2	Write Control Inputs	GW enables full 18-bit write; BWE enables byte-level control; BW1/BW2 select lower/upper 9-bit bytes - BW3/BW4 not connected per datasheet.
CE, CS0, CS1	Chip Enable/Select	Three-input decode: CE LOW + CS0 HIGH + CS1 LOW enables device; provides flexible chip selection in multi-SRAM systems.

Key Features

Feature	Design Value
Pipelined Outputs	First read data appears on second CLK edge - reduces effective latency in burst-read pipelines without increasing clock frequency.
Single-Cycle Deselect	Device enters high-Z state within one clock cycle after chip disable - eliminates bus contention during rapid address switching.
Self-Timed Write Cycle	Internal timing logic eliminates need for external write pulse generation; simplifies FPGA/controller interface design.
Separate VDD/VDDQ Supplies	Independent 3.3V core and I/O rails suppress switching noise coupling from data bus into logic circuitry.
Industrial Temperature Range	Validated operation from –40°C to +85°C - suitable for uncooled telecom infrastructure and factory automation hardware.

Applications

High-Speed Network Packet Buffer	FPGA Co-Processor Memory
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards before classification or forwarding. IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-latency, burst-capable buffer between MAC and traffic manager ASICs. Use Value: 166MHz clock rate and pipelined outputs deliver four consecutive 18-bit words per address cycle, matching typical packet header widths and minimizing bus arbitration overhead.	Use Scenario: Providing scratchpad memory for Xilinx Kintex or Intel Stratix FPGA-based digital signal processing engines. IC Role / Device Role / Timing Role: External high-bandwidth memory interfaced via dedicated FPGA EMIF with registered address/data/control. Use Value: Single-cycle deselect and 3.5ns tCD enable tight loop execution in real-time FFT or filter kernels without pipeline stalls.
Industrial PLC I/O Data Exchange	Avionics Sensor Fusion Buffer
Use Scenario: Temporarily storing synchronized analog input samples from 32-channel ADC modules in programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access memory for time-critical cyclic data exchange between CPU and I/O subsystems. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode (IZZ ≤70mA) ensure reliability in harsh cabinet environments with thermal cycling.	Use Scenario: Aggregating timestamped inertial measurement unit (IMU) and GPS data streams prior to Kalman filtering in flight control units. IC Role / Device Role / Timing Role: Burst-mode SRAM buffering sensor data at 1kHz+ rates while maintaining deterministic read/write timing. Use Value: Linear/interleaved burst selection (LBO) allows optimization for either sequential sensor channel reads or interleaved timestamp/data packing.

High-Speed Network Packet Buffer

FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards before classification or forwarding.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-latency, burst-capable buffer between MAC and traffic manager ASICs.

Use Value: 166MHz clock rate and pipelined outputs deliver four consecutive 18-bit words per address cycle, matching typical packet header widths and minimizing bus arbitration overhead.

Use Scenario: Providing scratchpad memory for Xilinx Kintex or Intel Stratix FPGA-based digital signal processing engines.

IC Role / Device Role / Timing Role: External high-bandwidth memory interfaced via dedicated FPGA EMIF with registered address/data/control.

Use Value: Single-cycle deselect and 3.5ns tCD enable tight loop execution in real-time FFT or filter kernels without pipeline stalls.

Industrial PLC I/O Data Exchange

Avionics Sensor Fusion Buffer

Use Scenario: Temporarily storing synchronized analog input samples from 32-channel ADC modules in programmable logic controllers.

IC Role / Device Role / Timing Role: Deterministic-access memory for time-critical cyclic data exchange between CPU and I/O subsystems.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode (IZZ ≤70mA) ensure reliability in harsh cabinet environments with thermal cycling.

Use Scenario: Aggregating timestamped inertial measurement unit (IMU) and GPS data streams prior to Kalman filtering in flight control units.

IC Role / Device Role / Timing Role: Burst-mode SRAM buffering sensor data at 1kHz+ rates while maintaining deterministic read/write timing.

Use Value: Linear/interleaved burst selection (LBO) allows optimization for either sequential sensor channel reads or interleaved timestamp/data packing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-166AXC	512K × 18, 166MHz, 3.3V, but uses different burst control (MODE pin instead of LBO) and lacks ZZ sleep mode.	No native low-power sleep state; requires external power sequencing for idle current reduction.	Prefer 71V67803S166BQG where system-level power budget mandates sub-100mA sleep current without added circuitry.
AS7C35128PFS-166BIN	512K × 18, 166MHz, 3.3V, supports linear burst only (no interleaved mode); higher ISB1 standby current (120mA vs. 70mA).	Limited to linear burst sequences; less flexible for cache-like access patterns requiring interleaved addressing.	Choose 71V67803S166BQG when dual-burst-mode support and lower industrial-grade standby current are required.

Compared with CY7C1371DV33-166AXC and AS7C35128PFS-166BIN, the 71V67803S166BQG uniquely combines LBO-configurable burst order, ZZ-enabled deep sleep, and industrial-grade 70mA IZZ - enabling simpler power architecture and broader memory access pattern support in embedded real-time systems.

Availability

71V67803S166BQG is available at Aetrix Electronics and suitable for high-speed network packet buffers, FPGA co-processor memory, and industrial PLC I/O data exchange requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67803S166BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V67803S166BQG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory interfacing in FPGA-, ASIC-, and microprocessor-based systems demanding deterministic timing and industrial reliability.

FAQ

What is the maximum clock frequency supported by the 71V67803S166BQG?

The 71V67803S166BQG supports a maximum clock frequency of 166MHz, corresponding to a 6ns clock cycle time (tCYC) and 3.5ns clock-to-data access time (tCD). This rating is guaranteed over the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3V ±5%. Operation above 166MHz is not characterized or supported.

Does the 71V67803S166BQG support both linear and interleaved burst modes?

Yes, the 71V67803S166BQG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, linear burst mode is selected; when HIGH, interleaved mode is activated. The datasheet explicitly states LBO is a static input and must not change state during device operation.

Are BW3 and BW4 pins functional on the 71V67803S166BQG?

No, BW3 and BW4 are not applicable for the 71V67803S166BQG. The datasheet confirms this in multiple locations, including the Pin Description Summary (Note 1) and the 512K × 18 pin configurations for TQFP, BGA, and fBGA packages. Only BW1 and BW2 are implemented for byte-select control of the 18-bit data bus.

What is the purpose of the ZZ pin on the 71V67803S166BQG?

The ZZ pin on the 71V67803S166BQG is an asynchronous sleep mode enable input. When driven HIGH, it gates the internal clock and places the device in full sleep mode, reducing supply current to IZZ ≤70mA (industrial grade). Data retention is guaranteed during sleep mode, and recovery requires tZZR ≥100ns after ZZ returns LOW.

Which package options are available for the 71V67803S166BQG?

The 71V67803S166BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), identified by the "BQG" suffix. While the underlying 71V67803 family also offers 119-ball BGA and 165-fine-pitch BGA variants, the "S166BQG" ordering code specifically denotes the 100-pin TQFP package with 166MHz speed grade and industrial temperature range.

71V67803S166BQG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67803S166BQG FAQ

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The price and inventory of 71V67803S166BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S166BQG is usually 5 days.

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6.How does Aetrix verify that 71V67803S166BQG is sourced from the original manufacturer or authorized distributors?

All 71V67803S166BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S166BQG meets industry standards.

7.What is the process for return or replacement of 71V67803S166BQG?

All 71V67803S166BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S166BQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67803S166BQG part is unused and in its original packaging.

Return procedure for 71V67803S166BQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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