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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67803S166BQG8

Name: 71V67803S166BQG8
Brand: Renesas
SKU: 71V67803S166BQG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67803S166BQG8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67803S166BQG8.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V67803S166BQG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz operation (3.5ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (−40°C to +85°C). Used in high-speed networking line cards and FPGA co-processor buffers.

For engineers reviewing the 71V67803S166BQG8 datasheet, 71V67803S166BQG8 pinout, 71V67803S166BQG8 application, or 71V67803S166BQG8 equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), 100-pin TQFP package compatibility, and absence of BW3/BW4 pins per device-specific pinout.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-generates four sequential addresses per initial address, enabling cache-line-aligned transfers without external sequencing logic.

The device uses dual supply rails (VDD = 3.3V ±5% core, VDDQ = 3.3V ±5% I/O), supports pipelined read outputs with tCD ≤ 3.5ns at 166MHz, and achieves single-cycle deselect via asynchronous OE and synchronous CE/CS0/CS1 decoding-critical for low-latency memory arbitration in real-time systems.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (9Mbit); matches 18-bit data bus width of DSPs and network processors.
Max Clock Frequency	166MHz; enables 6.0ns cycle time for sustained burst throughput in packet buffering applications.
Access Time (tCD)	3.5ns at 166MHz; defines minimum clock-to-valid-data delay for timing closure in high-speed PCB layouts.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; requires separate low-noise regulation for core and I/O domains.
Sleep Current (IZZ)	≤70mA at industrial temp; enables power-gating during idle periods in energy-constrained telecom modules.
Burst Mode Control	LBO pin selects linear vs. interleaved addressing sequence; determines cache-line mapping behavior in CPU interfaces.
Write Enable Logic	GW (global) and BWE + BW1/BW2 (byte-select) allow full-word or 9-bit sub-word writes without bus turnaround.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; thermal pad not present. Compatible with standard reflow profiles for lead-free assembly.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus for 512K-word addressing; A0/A1 advance during burst per LBO configuration.
CLK	Clock Input	Single-ended synchronous edge-trigger; all registers (address/data/control) sample on rising edge.
CE, CS0, CS1	Chip Enable / Selects	Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows multi-SRAM bank selection.
GW, BWE, BW1–BW2	Write Controls	GW writes all 18 bits; BWE enables BW1/BW2; BW1 drives I/O0–I/O8/I/OP1, BW2 drives I/O9–I/O17/I/OP2.
ADV	Burst Address Advance	LOW initiates burst counter increment; HIGH suspends burst, holding address for repeated access.
LBO	Burst Order Select	LOW = linear (00→01→10→11), HIGH = interleaved (00→01→11→10); static config, must not toggle mid-burst.
ZZ	Sleep Mode Input	HIGH disables internal clock and reduces current to ≤70mA; no reset required on wake-up.
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18 data bits + 2 parity bits; registered input/output paths ensure deterministic timing across temperature/voltage.

Key Features

Feature	Design Value
Pipelined Outputs	First output data appears one clock cycle after address latch; enables back-to-back reads without wait states.
Single-Cycle Deselect	OE HIGH or chip disable (CE/CS0/CS1 mismatch) forces I/O into high-Z within one CLK period-eliminates bus contention.
Self-Timed Write Cycle	Internal write timing resolves before CLK edge completion; removes external write-pulse generation logic.
Asynchronous Sleep Entry	ZZ HIGH immediately gates CLK and cuts power; retains data without external refresh or reset sequence.
Industrial Temp Support	Guaranteed operation from −40°C to +85°C; validated across voltage (3.135–3.465V) and timing margins.

Applications

Network Packet Buffering	FPGA Co-Processor Cache
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC and switching fabric; handles 166MHz burst reads/writes aligned to 64-byte cache lines. Use Value: Pipelined outputs and single-cycle deselect prevent pipeline stalls during frame header inspection and rewrite operations.	Use Scenario: Offloading compute-intensive tasks (e.g., CRC, encryption) from host CPU using FPGA-accelerated functions. IC Role / Device Role / Timing Role: Shared instruction/data memory between ARM processor and FPGA fabric; synchronized via common CLK and ADV signals. Use Value: 512K×18 organization matches FPGA block RAM granularity; burst mode reduces AXI bus cycles per 72-bit instruction fetch.
DSP-Based Baseband Processing	Real-Time Industrial Controller
Use Scenario: Holding FFT coefficients and intermediate results in wireless baseband processing units (e.g., LTE PHY layer). IC Role / Device Role / Timing Role: Dual-port accessible memory for parallel read/write by multiple DSP cores; LBO configures burst order to match FFT radix-4 addressing. Use Value: 3.5ns tCD ensures coefficient loading keeps pace with 166MHz DSP clock; ZZ sleep reduces power between TDMA slots.	Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in servo drive firmware. IC Role / Device Role / Timing Role: Deterministic-access scratchpad for real-time OS tasks; CE/CS0/CS1 decoding isolates memory banks per axis controller. Use Value: Industrial temperature rating (−40°C to +85°C) and 70mA sleep current meet EN 61800-5-1 requirements for factory-floor deployment.

Network Packet Buffering

FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC and switching fabric; handles 166MHz burst reads/writes aligned to 64-byte cache lines.

Use Value: Pipelined outputs and single-cycle deselect prevent pipeline stalls during frame header inspection and rewrite operations.

Use Scenario: Offloading compute-intensive tasks (e.g., CRC, encryption) from host CPU using FPGA-accelerated functions.

IC Role / Device Role / Timing Role: Shared instruction/data memory between ARM processor and FPGA fabric; synchronized via common CLK and ADV signals.

Use Value: 512K×18 organization matches FPGA block RAM granularity; burst mode reduces AXI bus cycles per 72-bit instruction fetch.

DSP-Based Baseband Processing

Real-Time Industrial Controller

Use Scenario: Holding FFT coefficients and intermediate results in wireless baseband processing units (e.g., LTE PHY layer).

IC Role / Device Role / Timing Role: Dual-port accessible memory for parallel read/write by multiple DSP cores; LBO configures burst order to match FFT radix-4 addressing.

Use Value: 3.5ns tCD ensures coefficient loading keeps pace with 166MHz DSP clock; ZZ sleep reduces power between TDMA slots.

Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in servo drive firmware.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad for real-time OS tasks; CE/CS0/CS1 decoding isolates memory banks per axis controller.

Use Value: Industrial temperature rating (−40°C to +85°C) and 70mA sleep current meet EN 61800-5-1 requirements for factory-floor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1315KV18-166BZXI	Same 512K×18 organization, 166MHz, but uses 165-ball fBGA; lacks LBO pin-fixed linear burst only.	Requires PCB redesign for BGA footprint; unsuitable where interleaved burst is mandated by legacy CPU interface.	Select when board space is constrained and burst order is fixed; verify ADV timing compatibility with existing controller.
AS7C35128P-166BIN	512K×18, 166MHz, 100-pin TQFP, but no ZZ sleep mode; standby current 155mA vs. 70mA in sleep.	Higher power draw prevents use in thermally limited enclosures or battery-backed systems requiring deep sleep.	Choose for cost-sensitive designs where continuous operation is guaranteed and thermal headroom exists.

Compared with CY7C1315KV18-166BZXI and AS7C35128P-166BIN, the 71V67803S166BQG8 uniquely combines 100-pin TQFP packaging, configurable burst order (LBO), and ultra-low 70mA sleep current-enabling drop-in replacement in industrial control and telecom infrastructure where layout reuse and power budgeting are critical.

Availability

71V67803S166BQG8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and real-time industrial controller applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67803S166BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, microcontrollers, and analog/power solutions for industrial, automotive, and communications markets.

The 71V67803 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic timing, low-latency burst access, and robust operation in mission-critical infrastructure equipment.

FAQ

What is the maximum supported clock frequency for the 71V67803S166BQG8?

The 71V67803S166BQG8 is rated for 166MHz operation, with guaranteed 3.5ns clock-to-data (tCD) access time under commercial and industrial temperature conditions. This frequency is validated across full VDD (3.135–3.465V) and VDDQ ranges, and requires adherence to setup/hold timing margins specified in the AC Electrical Characteristics table.

Does the 71V67803S166BQG8 support both linear and interleaved burst modes?

Yes, the 71V67803S166BQG8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (00→01→10→11), while LBO = HIGH selects interleaved (00→01→11→10). This pin is static-its state must be fixed before burst initiation and must not change during active burst sequences.

How many byte-write enable signals does the 71V67803S166BQG8 implement?

The 71V67803S166BQG8 implements two byte-write enable signals: BW1 controls I/O0–I/O8 and I/OP1 (9-bit byte), and BW2 controls I/O9–I/O17 and I/OP2 (9-bit byte). BW3 and BW4 are explicitly not applicable to this part, as confirmed in the Pin Description Summary and 512K×18 pin configurations.

What is the sleep current consumption of the 71V67803S166BQG8 in full sleep mode?

In full sleep mode (ZZ = HIGH), the 71V67803S166BQG8 draws ≤70mA at industrial temperature (−40°C to +85°C) and maximum VDD/VDDQ. This value is measured with outputs disabled and all inputs held static, ensuring minimal power draw while retaining data integrity without refresh.

Which package type is used for the 71V67803S166BQG8?

The 71V67803S166BQG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body size, 0.5mm lead pitch. Pin 1 is identified by a corner notch, and the package is RoHS-compliant and lead-free reflow compatible.

71V67803S166BQG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67803S166BQG8 FAQ

1.How can I place an order for 71V67803S166BQG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67803S166BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V67803S166BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67803S166BQG8 is usually 5 days.

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For technical support, including 71V67803S166BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67803S166BQG8 requirements.

6.How does Aetrix verify that 71V67803S166BQG8 is sourced from the original manufacturer or authorized distributors?

All 71V67803S166BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67803S166BQG8 meets industry standards.

7.What is the process for return or replacement of 71V67803S166BQG8?

All 71V67803S166BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67803S166BQG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67803S166BQG8 part is unused and in its original packaging.

Return procedure for 71V67803S166BQG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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