Renesas 71V67803S166PFGI8

Overview

71V67803S166PFGI8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz clock operation (3.5ns access). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW2), and operates across industrial temperature range (−40°C to +85°C) in a 100-pin TQFP package. It targets high-speed cache and buffer applications in networking line cards.

For engineers reviewing the 71V67803S166PFGI8 datasheet, 71V67803S166PFGI8 pinout, 71V67803S166PFGI8 application, or 71V67803S166PFGI8 equivalent, key selection criteria include burst timing compliance, ZZ-controlled sleep mode current (≤70mA), 3.3V I/O supply (VDDQ) tolerance, and compatibility with ADSP/ADSC address status protocols in cache-coherent systems.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) based on static LBO state-no runtime reconfiguration. The self-timed write cycle resolves write decisions at the end of the clock cycle, decoupling setup timing from write completion.

Pipelined output staging delivers first valid data one clock cycle after address latch, enabling continuous burst reads at full speed. Deselect occurs in a single CLK cycle when CE/CS0/CS1 transition to inactive states, minimizing bus turnaround latency in multi-device memory subsystems.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67803S166PFGI8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372KV18 and AS7C3256B, the 71V67803S166PFGI8 uniquely combines 166MHz burst capability, pipelined output staging, and ZZ-controlled sleep mode in a 512K×18 configuration-making it irreplaceable for high-throughput, low-latency industrial memory subsystems requiring deterministic timing and power management.

Availability

71V67803S166PFGI8 is available at Aetrix Electronics and suitable for packet buffering, cache tag storage, and real-time control FIFO applications requiring stable component supply, long-term industrial temperature qualification, and guaranteed 166MHz burst performance.

Supply support for 71V67803S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and analog solutions for communications, computing, and industrial markets.

The 71V67803S166PFGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in networking infrastructure and real-time embedded control applications.

FAQ

What is the maximum supported clock frequency for the 71V67803S166PFGI8?

The 71V67803S166PFGI8 is rated for 166MHz operation with a minimum clock cycle time (tCYC) of 6ns. At this frequency, it achieves 3.5ns clock-to-data (tCD) access time under commercial conditions. Performance is guaranteed across the full industrial temperature range (−40°C to +85°C) with appropriate 3.3V ±5% supply regulation and layout adherence to AC timing constraints.

Does the 71V67803S166PFGI8 support both linear and interleaved burst modes?

Yes, the 71V67803S166PFGI8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear bursts (e.g., addresses 0x00→0x01→0x02→0x03); when LBO is HIGH, it performs interleaved bursts (e.g., 0x00→0x02→0x01→0x03). LBO is a static input and must remain stable during active operation.

What is the function of the ZZ pin on the 71V67803S166PFGI8?

The ZZ pin on the 71V67803S166PFGI8 is an asynchronous sleep mode input. When asserted HIGH, ZZ gates the internal clock and places the device into full sleep mode, reducing supply current to ≤70mA while maintaining data retention. Recovery time (tZZR) is guaranteed at 100ns, and ZZ must be held HIGH for at least tZZPW (100ns) to enter sleep reliably.

How many byte write enable signals does the 71V67803S166PFGI8 support?

The 71V67803S166PFGI8 supports two byte write enable signals: BW1 and BW2. BW1 controls the lower 9-bit byte (I/O0–I/O8), and BW2 controls the upper 9-bit byte (I/O9–I/O17). Unlike the 71V67603 variant, BW3 and BW4 are not applicable to the 71V67803S166PFGI8 due to its 512K×18 organization.

Is the 71V67803S166PFGI8 compatible with 3.3V-only system designs?

Yes, the 71V67803S166PFGI8 is fully compatible with 3.3V-only systems. It requires VDD = 3.3V ±5% for core logic and VDDQ = 3.3V ±5% for I/O drivers, with separate decoupling recommended. All input thresholds (VIH/VIL) and output drive levels (VOH/VOL) are specified for 3.3V operation, and no 5V-tolerant signaling is supported.