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Renesas 71V67903S75BG
- Part No.:
- 71V67903S75BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67903S75BG.pdf
- Description:
- IC SRAM 9MBIT PAR 117MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,859
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Product details
Overview
71V67903S75BG from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at up to 117MHz clock frequency, single-cycle deselect, and linear/interleaved burst mode controlled by LBO input. It operates across industrial temperature range (–40°C to +85°C) and supports byte-write and global-write operations in JEDEC-standard 100-pin TQFP packaging.
For engineers reviewing the 71V67903S75BG datasheet, 71V67903S75BG pinout, 71V67903S75BG application, or 71V67903S75BG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility with VDDQ separation, flow-through output latency for high-speed cache interfaces, and ZZ-controlled sleep mode for low-power standby in embedded memory subsystems.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling zero-cycle output delay after clock-to-data propagation. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO, supporting four-word bursts per address.
The device features dual power domains (VDD = 3.3V core, VDDQ = 3.3V I/O), asynchronous ZZ sleep entry, and configurable write granularity: GW enables full 18-bit writes, while BWE + BW1–BW2 (BW3/BW4 not applicable per datasheet note) enable selective byte writes. CE/CS0/CS1 decoding supports multi-chip memory banking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit total); configured as 18-bit wide data bus for high-bandwidth processor/cache interfacing |
| Access Time / Max Clock | 7.5ns access time; supports up to 117MHz system clock - enables sub-9ns read cycles in burst mode |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rails allow I/O voltage optimization without affecting core logic |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin; eliminates external address sequencing logic in burst-capable controllers |
| Power Management | ZZ input enables full-sleep mode with ≤70mA ISB2 (clock-running standby) and ≤70mA IZZ (deep sleep) - critical for thermal-constrained systems |
| Operating Temperature | –40°C to +85°C industrial grade; validated for sustained operation in base station, industrial PLC, and avionics memory buffers |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm footprint - compatible with standard SMT reflow and automated optical inspection |
Pinout & Package
71V67903S75BG is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm lead pitch. Pinout conforms to the 512K × 18 configuration (per datasheet drawing 5309 drw 02b), where A18 is active, BW3/BW4 are NC, and pins A10–A18, I/O0–I/O15, I/OP1–I/OP2 are fully assigned.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous 19-bit address bus; A18 used in 512K×18 mode to select upper memory block - no A19 required |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode (CE LOW + CS0 HIGH + CS1 LOW) enables bank selection in multi-SRAM systems |
| GW, BWE, BW1–BW2 | Write Control Inputs | GW initiates full 18-bit write; BWE enables BW1/BW2 (controls I/O0–I/O8 and I/O9–I/O17); BW3/BW4 are No Connect per datasheet note |
| CLK, ADV, ADSP, ADSC | Burst Timing Controls | CLK drives all registers; ADV advances burst counter; ADSP/ADSC latch address on falling edge - supports cache coherency handshake |
| LBO, ZZ, OE | Mode & Output Control | LBO selects linear/interleaved burst order; ZZ enables deep sleep (asynchronous); OE disables outputs asynchronously for bus sharing |
| I/O0–I/O15, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus (16 data + 2 parity); flow-through output path ensures tCD = 7.5ns max - no output register delay |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - delivers first valid data within 7.5ns of CLK rise, enabling tight timing closure in high-frequency CPU caches |
| Self-timed write cycle | Internal write timing resolves on-clock-cycle; removes need for external write-strobe generation or timing margining in burst write sequences |
| Single-cycle deselect | Outputs enter high-Z within one clock cycle after chip disable - prevents bus contention during rapid bank switching in multi-SRAM systems |
| Asynchronous ZZ sleep mode | Reduces supply current to ≤70mA (IZZ) with no clock dependency - allows immediate power-down during idle periods without synchronization overhead |
| Separate VDD/VDDQ supplies | Enables independent noise filtering and decoupling for core logic and I/O drivers - improves signal integrity in mixed-noise environments |
Applications
| High-Speed Cache Buffer | Network Packet Buffer |
|---|---|
Use Scenario: L2/L3 cache buffer between RISC-V or ARM-based SoC and DDR controller in edge AI inference accelerator. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM providing 117MHz burst reads/writes with deterministic 7.5ns tCD to meet cache refill deadlines. Use Value: Flow-through outputs eliminate pipeline stalls; single-cycle deselect enables rapid context switching between multiple cache banks. |
Use Scenario: Temporary storage for packet headers and metadata in 10G Ethernet line card ASIC interface. IC Role / Device Role / Timing Role: Synchronous burst-memory buffer synchronizing variable-length packet ingress/egress with fixed-clock PHY interface. Use Value: LBO-configurable burst order matches network processor's address stride; ZZ sleep reduces idle power by >85% during low-traffic intervals. |
| Industrial PLC Memory Module | Avionics Data Recorder Buffer |
Use Scenario: Real-time program/data memory in ruggedized programmable logic controller with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: Industrial-grade SRAM delivering guaranteed –40°C to +85°C operation and burst-mode instruction fetch for microcontroller core. Use Value: Dual VDD/VDDQ rails isolate noisy I/O transients from core logic; CE/CS0/CS1 decoding supports modular memory expansion. |
Use Scenario: Buffered acquisition memory in flight data recorder capturing sensor telemetry at 100kHz sample rate. IC Role / Device Role / Timing Role: Low-latency, radiation-tolerant (industrial-grade) SRAM storing timestamped samples before compression and archival. Use Value: 7.5ns access + flow-through output ensures no sample loss during burst capture; ZZ sleep extends battery runtime during standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-75BAXI | 512K × 18, 3.3V, 75MHz max clock (13.3ns access); no LBO or ADV; uses conventional asynchronous OE control | Lacks burst addressing and flow-through output - requires external address sequencer and adds 1–2 ns output delay | Select when burst mode is unnecessary and lower cost or legacy design reuse is prioritized over peak bandwidth. |
| AS7C35128P-75BIN | 512K × 18, 3.3V, 7.5ns access; supports linear burst only; no ZZ sleep; 119-ball BGA package only | Missing interleaved burst and deep-sleep mode; BGA footprint incompatible with TQFP PCB layout | Choose only if board redesign to BGA is feasible and ZZ power gating is not required in the system architecture. |
Compared with CY7C1371DV33-75BAXI and AS7C35128P-75BIN, the 71V67903S75BG delivers superior timing determinism via flow-through outputs and flexible burst control, while its TQFP package and ZZ sleep support drop-in integration into space-constrained, thermally sensitive industrial and aerospace designs.
Availability
71V67903S75BG is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet processing, industrial PLC memory modules, and avionics data recorders requiring stable component supply across extended product lifecycles.
Supply support for 71V67903S75BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor leader specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V67903S75BG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in real-time embedded systems demanding deterministic timing and industrial reliability.
FAQ
What memory organization does the 71V67903S75BG support?
The 71V67903S75BG is organized as 512K × 18 bits (9 megabits total), optimized for 18-bit data bus interfaces. This configuration differs from the 256K × 36 variant (71V67703) and is explicitly confirmed in the datasheet pinout diagrams and truth tables for PKG100 512K×18 layout (drawing 5309 drw 02b).
Does the 71V67903S75BG support both linear and interleaved burst modes?
Yes, the 71V67903S75BG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO = LOW, linear burst is selected; when LBO = HIGH, interleaved burst is selected - as defined in Tables 14 and 15 of the datasheet.
Are BW3 and BW4 functional on the 71V67903S75BG?
No, BW3 and BW4 are not applicable for the 71V67903S75BG. The datasheet explicitly states this in Pin Description Summary (page 3, note 1) and confirms NC status in the 512K×18 TQFP pinout diagram (5309 drw 02b). Only BW1 and BW2 are active for byte-write control.
What is the role of the ZZ pin on the 71V67903S75BG?
The ZZ pin on the 71V67903S75BG is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (IZZ), enabling ultra-low-power standby while retaining data - critical for battery-backed or thermally constrained applications.
Which package type is used by the 71V67903S75BG?
The 71V67903S75BG uses a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP) package, 14mm × 20mm body size, with 0.5mm lead pitch. This is confirmed in the "Packaged in…" feature list (page 2) and the dedicated "Pin Configuration – 512K x 18, PKG100" diagram (page 5, 5309 drw 02b).
71V67903S75BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67903S75BG FAQ
1.How can I place an order for 71V67903S75BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S75BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S75BG reliable?
The price and inventory of 71V67903S75BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S75BG is usually 5 days.
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71V67903S75BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67903S75BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S75BG?
For technical support, including 71V67903S75BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S75BG requirements.
6.How does Aetrix verify that 71V67903S75BG is sourced from the original manufacturer or authorized distributors?
All 71V67903S75BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S75BG meets industry standards.
7.What is the process for return or replacement of 71V67903S75BG?
All 71V67903S75BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S75BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S75BG part is unused and in its original packaging.
Return procedure for 71V67903S75BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S75BG Tags
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