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Renesas 71V67903S75BG8
- Part No.:
- 71V67903S75BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67903S75BG8.pdf
- Description:
- IC SRAM 9MBIT PAR 117MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,771
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Product details
Overview
71V67903S75BG8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at 117MHz, single-cycle deselect, and burst-mode operation. It features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and industrial-grade temperature support (–40°C to +85°C). Used in high-speed networking buffers and real-time DSP data caching.
For engineers reviewing the 71V67903S75BG8 datasheet, 71V67903S75BG8 pinout, 71V67903S75BG8 application, or 71V67903S75BG8 equivalent, key selection criteria include burst timing compliance, 3.3V I/O voltage tolerance, TQFP-100 vs. BGA-119 package compatibility, and ZZ-controlled sleep mode current (≤70mA).
Technical Context
The 71V67903S75BG8 implements a synchronous, clock-driven architecture with registered address/data inputs and flow-through (unregistered) outputs - eliminating output register delay for minimal read latency. Its internal burst counter advances on ADV=LOW, generating four consecutive addresses per initial address, with sequence order determined by LBO state (linear or interleaved).
Burst writes are supported via synchronous GW (global write) or BWE/BW1–BW4 (byte write enable), where BW3 and BW4 are not applicable per datasheet Note 1. Power management includes asynchronous ZZ input enabling full-sleep mode with ≤70mA supply current and guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9Mbit); supports 3.3V I/O-only interface without core voltage scaling. |
| Access Time / Max Frequency | 7.5ns access time; enables 117MHz system clock operation with tCYC = 8.5ns minimum. |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence; ADV controls advance timing. |
| Write Control | Self-timed write with GW (all bytes) or BWE + BW1–BW2 (byte-selective); BW3/BW4 unused per datasheet. |
| Power Management | Asynchronous ZZ input enables full-sleep mode; ISB1 standby current ≤70mA; IZZ sleep current ≤70mA. |
| Operating Temperature | Industrial range –40°C to +85°C; validated across VDD/VDDQ = 3.3V ±5%. |
| Output Architecture | Flow-through outputs: data appears after tCD (7.5ns max) with no output register delay or pipeline stall. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm footprint. Pinout validated for 512K × 18 configuration (PKG100) per datasheet Figure 5309 drw 02b.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion. |
| CE, CS0, CS1 | Chip Enable/Select | Three-level synchronous chip select: CE active LOW, CS0 active HIGH, CS1 active LOW. |
| GW, BWE, BW1–BW2 | Write Control | GW enables full-word write; BWE gates BW1–BW2; BW3/BW4 not connected per datasheet Note 1. |
| ADV, LBO, ZZ | Mode Control | ADV advances burst counter; LBO selects burst order (asynchronous); ZZ enables sleep mode (asynchronous HIGH). |
| I/O0–I/O17, I/OP1–I/OP2 | Data I/O | 18-bit bidirectional data bus + 2 parity bits; flow-through output path; registered input path. |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core; VDDQ = 3.3V I/O; separate supplies allow independent noise isolation. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 7.5ns max ensures deterministic read-to-data timing for real-time systems. |
| Single-cycle deselect | Device transitions to high-Z output state within one clock cycle upon deselection, preventing bus contention in multi-SRAM systems. |
| LBO-configurable burst order | Hardware-selectable linear or interleaved burst sequences enable optimization for cache line alignment or memory controller addressing schemes. |
| Asynchronous ZZ sleep control | Reduces power to ≤70mA without clock gating or software intervention; retains data during low-power states. |
| 3.3V-only I/O interface | VDDQ = 3.3V ±5% eliminates level-shifting requirements when interfacing with 3.3V FPGAs, ASICs, or processors. |
Applications
| High-Speed Network Packet Buffer | DSP Data Cache Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer supporting 117MHz burst reads/writes with deterministic tCD timing. Use Value: Enables line-rate packet buffering without pipeline stalls; flow-through outputs reduce frame processing latency by ≥2ns vs. registered-output SRAMs. | Use Scenario: Holding intermediate FFT coefficients and filter taps in real-time audio/video processing pipelines. IC Role / Device Role / Timing Role: Dual-port-capable data scratchpad with burst-mode access aligned to 4-word SIMD operations. Use Value: Linear burst mode (LBO=LOW) matches natural coefficient access patterns, reducing address overhead by 75% per burst sequence. |
| Industrial PLC I/O Data Exchange | Radar Signal Processing FIFO |
Use Scenario: Buffering sensor input/output data between fieldbus controllers and real-time motion control engines. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing deterministic read/write timing under EMI-heavy factory environments. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation during thermal cycling; tCLZ = 0ns guarantees immediate output activation. | Use Scenario: Capturing high-speed ADC samples from phased-array radar front-ends before FFT computation. IC Role / Device Role / Timing Role: Low-jitter, flow-through memory staging raw IQ data at >100MB/s sustained throughput. Use Value: 7.5ns tCD and 8.5ns tCYC support 117MHz sampling clocks; single-cycle deselect prevents data corruption during rapid FIFO reset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-75BGXI | 512K × 18-bit, 75MHz max (tCYC = 13.3ns); uses QDR-II architecture with separate read/write ports. | Requires dual-port controller logic; lacks LBO-configurable burst order and ZZ sleep mode. | Select when simultaneous read/write bandwidth >100MB/s is required; avoid if burst-mode simplicity or low-power sleep is critical. |
| AS7C35128P-75JCIN | 512K × 18-bit, 7.5ns access, but asynchronous interface (no CLK, ADV, or burst counter); CMOS-compatible timing. | No burst capability; requires external address sequencing logic; higher static power (ISB1 = 120mA). | Choose for legacy designs lacking clock infrastructure; unsuitable for burst-intensive applications like network buffers. |
Compared with CY7C1371BV33-75BGXI and AS7C35128P-75JCIN, the 71V67903S75BG8 uniquely combines 117MHz burst performance, hardware-configurable burst order, and sub-70mA sleep current - making it optimal for power-constrained, high-throughput embedded systems requiring deterministic timing.
Availability
71V67903S75BG8 is available at Aetrix Electronics and suitable for high-speed network packet buffering, real-time DSP data caching, and industrial PLC I/O data exchange requiring stable component supply and long-term lifecycle support.
Supply support for 71V67903S75BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V67903S75BG8 belongs to IDT's 71V67x03 family of synchronous SRAMs, designed specifically for applications demanding low-latency, burst-mode data access in networking, signal processing, and real-time control systems.
FAQ
What is the maximum operating frequency of the 71V67903S75BG8?
The 71V67903S75BG8 supports up to 117MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 8.5ns and 7.5ns access time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions per datasheet Table 16.
Does the 71V67903S75BG8 support both linear and interleaved burst modes?
Yes, the 71V67903S75BG8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence; LBO = HIGH selects interleaved sequence. The datasheet explicitly confirms this behavior for the 71V67903 variant in Tables 14 and 15, and notes LBO is asynchronous and must remain static during operation.
Are BW3 and BW4 pins functional on the 71V67903S75BG8?
No, BW3 and BW4 are not applicable for the 71V67903S75BG8. Datasheet Note 1 on page 3 and Truth Table 12 explicitly state "BW3 and BW4 are not applicable for the IDT71V67903", confirming these pins are unused and must be left unconnected or tied to VSS per design guidance.
What is the power consumption of the 71V67903S75BG8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V67903S75BG8 draws ≤70mA supply current (IZZ) at VDD = 3.465V and TA = +85°C, as specified in datasheet Table 9. This current includes both core and I/O supply paths and guarantees data retention throughout the industrial temperature range.
Which package options are available for the 71V67903S75BG8?
Per datasheet Section 1, the 71V67903S75BG8 is packaged in JEDEC-standard 100-pin TQFP (PKG100), 119-ball BGA (BG119), and 165-fine-pitch BGA (BQ165). The "S75BG8" suffix indicates the 100-pin TQFP variant with 7.5ns speed grade and industrial temperature range.
71V67903S75BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67903S75BG8 FAQ
1.How can I place an order for 71V67903S75BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67903S75BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67903S75BG8 reliable?
The price and inventory of 71V67903S75BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S75BG8 is usually 5 days.
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Once your 71V67903S75BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67903S75BG8?
For technical support, including 71V67903S75BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S75BG8 requirements.
6.How does Aetrix verify that 71V67903S75BG8 is sourced from the original manufacturer or authorized distributors?
All 71V67903S75BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S75BG8 meets industry standards.
7.What is the process for return or replacement of 71V67903S75BG8?
All 71V67903S75BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S75BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67903S75BG8 part is unused and in its original packaging.
Return procedure for 71V67903S75BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67903S75BG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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