Renesas 71V67903S75BQ

Overview

71V67903S75BQ from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and 7.5ns access time at up to 117MHz clock frequency. It supports linear/interleaved burst modes via LBO input, self-timed write with global/byte write controls, and operates across industrial temperature range (–40°C to +85°C). Used in high-bandwidth packet buffering and cache subsystems requiring deterministic timing.

For engineers reviewing the 71V67903S75BQ datasheet, 71V67903S75BQ pinout, 71V67903S75BQ application, or 71V67903S75BQ equivalent, key selection criteria include burst address sequencing behavior, ZZ-controlled sleep mode current (≤70mA), 100-pin TQFP package compatibility, and absence of BW3/BW4 pins per datasheet Note 1 - critical for PCB layout and timing validation.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address/data inputs and flow-through (unregistered) outputs - enabling zero-latency data delivery on the same clock edge as address latching. Burst operation is initiated by ADSP/ADSC low and ADV low, with internal binary counter generating four consecutive addresses based on LBO state.

Write control uses hierarchical enable logic: GW overrides BWE, and BWE gates BW1–BW4 (though BW3/BW4 are not applicable for 71V67903). Power management includes asynchronous ZZ input that gates CLK internally, reducing supply current to ≤70mA in full sleep mode while guaranteeing data retention.

Key Specifications

Pinout & Package

71V67903S75BQ is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm lead pitch. Pin 1 marked by corner notch; pin numbering follows standard counter-clockwise convention from top-left.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-75BZXI and AS7C35128P-75BIN, the 71V67903S75BQ uniquely combines single-clock synchronous burst operation, flow-through outputs, and ZZ-controlled sleep - making it irreplaceable in deterministic real-time buffering where clock-domain bridging or power gating is required.

Availability

71V67903S75BQ is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache controller interfaces, and telecom baseband processing requiring stable component supply across extended industrial temperature ranges.

Supply support for 71V67903S75BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, microcontrollers, and analog/power solutions for industrial, automotive, and communications markets.

The 71V67903S75BQ belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency memory subsystems in networking, baseband, and real-time control applications demanding burst-mode efficiency and industrial reliability.

FAQ

What is the maximum clock frequency supported by the 71V67903S75BQ?

The 71V67903S75BQ supports up to 117MHz clock frequency when operating at its 7.5ns access time rating. This is validated under commercial and industrial temperature conditions with VDD and VDDQ at 3.3V ±5%. The device maintains timing compliance across the full –40°C to +85°C range, with AC parameters including tCYC ≥ 8.5ns and tCD ≤ 7.5ns.

Does the 71V67903S75BQ support both linear and interleaved burst modes?

Yes, the 71V67903S75BQ supports both linear and interleaved burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the internal burst counter follows linear sequence (00→01→10→11); when LBO is HIGH, it follows interleaved sequence (00→01→11→10). LBO is asynchronous and must remain static during burst operation.

Are BW3 and BW4 pins functional on the 71V67903S75BQ?

No, BW3 and BW4 are not applicable for the 71V67903S75BQ, as explicitly stated in the datasheet Note 1 under Pin Description Summary. The 71V67903S75BQ implements only BW1 and BW2 for 9-bit byte write control of the 18-bit data bus. Pins designated BW3/BW4 in the 100-pin TQFP footprint are NC (no-connect) for this variant.

What is the power consumption of the 71V67903S75BQ in sleep mode?

In full sleep mode (ZZ = HIGH), the 71V67903S75BQ draws ≤70mA of supply current (IZZ) at maximum VDD, as specified in the AC Electrical Characteristics table for industrial temperature grade. This current level guarantees data retention and enables rapid wake-up (<100ns tZZR) without requiring initialization or refresh.

Which package does the 71V67903S75BQ use, and what are its key mechanical features?

The 71V67903S75BQ uses a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP) package, measuring 14mm × 20mm with 0.5mm lead pitch. It features exposed pad-less construction, standard gull-wing leads, and is compatible with IPC-7351B footprint guidelines. Pin 1 is identified by a corner notch, and the package is rated for industrial reflow profiles per J-STD-020.