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Renesas 71V67903S75BQ8

Name: 71V67903S75BQ8
Brand: Renesas
SKU: 71V67903S75BQ8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67903S75BQ8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67903S75BQ8.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

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Product details

Overview

71V67903S75BQ8 from IDT (now Renesas) is a 512K × 18-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at 117MHz, single-cycle deselect, and burst-mode operation. It features self-timed write control via GW/BWE/BWx, LBO-selectable linear/interleaved burst order, and ZZ-controlled sleep mode. Used in high-bandwidth networking buffers and FPGA co-processor memory subsystems.

For engineers reviewing the 71V67903S75BQ8 datasheet, 71V67903S75BQ8 pinout, 71V67903S75BQ8 application, or 71V67903S75BQ8 equivalent, key selection criteria include burst address sequencing behavior, byte-write enable timing compatibility with host bus controllers, flow-through output latency versus registered-output alternatives, and TQFP-100 package thermal performance under sustained 117MHz operation.

Technical Context

This SRAM implements a synchronous, clock-driven interface with dual chip-select architecture (CS0 active-HIGH, CS1 active-LOW) and separate address status inputs (ADSP for processor, ADSC for cache controller). The internal burst counter advances on ADV=LOW and selects sequence order via LBO pin state - linear when LBO=LOW, interleaved when LBO=HIGH.

Write operations support global (GW) or byte-level (BW1–BW4) control, with BWE gating BWx signals; note BW3/BW4 are not applicable to 71V67903 per datasheet. Output drivers are flow-through (no output register), enabling tCD = 7.5ns clock-to-data delay, while input path is registered on CLK rising edge.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 18-bit (998,400 bits); supports 18-bit data bus width with 19-bit addressing (A0–A18).
Access Time / Max Frequency	7.5ns access time; supports up to 117MHz system clock - enables one read/write per cycle at full speed.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent power domains allow I/O voltage stability during core switching.
Burst Mode	Four-word burst per address; internal binary counter generates sequential addresses; LBO pin selects linear or interleaved order.
Power Management	ZZ input enables full sleep mode (IZZ ≤ 70mA); ISB1 standby current ≤ 70mA; no external refresh or initialization required.
Temperature Range	Industrial grade: –40°C to +85°C; validated across full range for timing and data retention.
Package	JEDEC-standard 100-pin TQFP (14mm × 20mm); lead-free, RoHS-compliant; thermal pad optional per variant.

Pinout & Package

71V67903S75BQ8 is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-137AC, 0.5mm pitch, body size 14mm × 20mm. Pin 1 marked by corner notch; top-side marking includes "71V67903S75BQ8" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching triggered by CLK rising edge + ADSP/ADSC low; A0/A1 define burst word offset in linear/interleaved sequences.
CE, CS0, CS1	Chip Enable / Selects	Three-input decode: CE=LOW + CS0=HIGH + CS1=LOW enables device; allows hierarchical memory mapping in multi-SRAM systems.
GW, BWE, BW1–BW4	Write Control Inputs	GW writes all 18-bit words; BWE enables BW1–BW4; BW1 controls I/O0–I/O8/I/OP1, BW2 controls I/O9–I/O17/I/OP2 - BW3/BW4 not connected on 71V67903.
CLK, ADV, LBO, ZZ	Timing & Mode Control	CLK drives all registers; ADV=LOW advances burst counter; LBO=LOW selects linear burst; ZZ=HIGH enters low-power sleep (CLK gated internally).
I/O0–I/O17, I/OP1–I/OP2	Data I/O	18-bit bidirectional data bus + 2 parity bits; flow-through output path yields deterministic 7.5ns tCD; input path registered on CLK rising edge.
VDD, VDDQ, VSS	Power & Ground	Dedicated VDD (core), VDDQ (I/O), and multiple VSS pins minimize noise coupling; decoupling required per JEDEC layout guidelines.

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay: tCD = 7.5ns guaranteed, enabling tight timing closure in high-speed bus interfaces without added pipeline stages.
Single-cycle deselect	Device transitions to high-Z output state within one CLK cycle after deselection - critical for bus turnaround in shared-memory multiprocessor systems.
Self-timed write cycle	Internal timing logic resolves write completion without external wait-state generation; compatible with fixed-latency bus protocols like PCI-X backplane memory.
LBO-configurable burst order	Hardware-selectable linear (LBO=LOW) or interleaved (LBO=HIGH) address sequence - matches cache line layouts in MIPS or PowerPC-based SoCs.
Asynchronous ZZ sleep control	ZZ=HIGH immediately gates internal clock and reduces supply current to ≤70mA - supports dynamic power scaling in packet-processing ASICs.

Applications

Networking Line Card Buffer	FPGA Co-Processor Memory
Use Scenario: Storing packet descriptors and metadata in 10Gbps Ethernet line cards with real-time traffic shaping. IC Role / Device Role / Timing Role: High-speed, low-latency buffer between MAC and traffic manager; provides burst-aligned 18-bit reads/writes synchronized to 117MHz reference clock. Use Value: 7.5ns tCD and single-cycle deselect reduce packet queuing jitter below 1.5ns; flow-through outputs eliminate need for output FIFO staging.	Use Scenario: Offloading compute-intensive filtering tasks from host CPU using Xilinx Kintex FPGA with AXI-Stream interface. IC Role / Device Role / Timing Role: Dual-port-accessible scratchpad memory mapped into FPGA's BRAM address space; burst mode supplies four coefficients per instruction fetch. Use Value: Linear burst (LBO=LOW) matches FIR filter coefficient access pattern; 512K×18 capacity supports 128-tap filters with 16-bit precision and parity.
Industrial PLC Motion Controller	Avionics Data Acquisition Buffer
Use Scenario: Real-time interpolation of motor position commands in servo drive modules requiring deterministic sub-microsecond response. IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to TI C2000 DSC via EMIF; stores trajectory tables and PID gain schedules. Use Value: Industrial temperature rating (–40°C to +85°C) ensures reliability in sealed enclosures; ZZ sleep mode cuts idle power by >80% during motion dwell periods.	Use Scenario: Capturing sensor telemetry from inertial measurement units (IMUs) in flight control computers with ARINC 429 timing constraints. IC Role / Device Role / Timing Role: High-integrity buffer holding 16-sample bursts from 12-bit ADCs; parity bits (I/OP1/I/OP2) detect single-bit errors in radiation-prone environments. Use Value: Flow-through output guarantees consistent 7.5ns read latency across all temperatures - eliminates timing margin uncertainty in DO-254-certified designs.

Networking Line Card Buffer

FPGA Co-Processor Memory

Use Scenario: Storing packet descriptors and metadata in 10Gbps Ethernet line cards with real-time traffic shaping.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer between MAC and traffic manager; provides burst-aligned 18-bit reads/writes synchronized to 117MHz reference clock.

Use Value: 7.5ns tCD and single-cycle deselect reduce packet queuing jitter below 1.5ns; flow-through outputs eliminate need for output FIFO staging.

Use Scenario: Offloading compute-intensive filtering tasks from host CPU using Xilinx Kintex FPGA with AXI-Stream interface.

IC Role / Device Role / Timing Role: Dual-port-accessible scratchpad memory mapped into FPGA's BRAM address space; burst mode supplies four coefficients per instruction fetch.

Use Value: Linear burst (LBO=LOW) matches FIR filter coefficient access pattern; 512K×18 capacity supports 128-tap filters with 16-bit precision and parity.

Industrial PLC Motion Controller

Avionics Data Acquisition Buffer

Use Scenario: Real-time interpolation of motor position commands in servo drive modules requiring deterministic sub-microsecond response.

IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to TI C2000 DSC via EMIF; stores trajectory tables and PID gain schedules.

Use Value: Industrial temperature rating (–40°C to +85°C) ensures reliability in sealed enclosures; ZZ sleep mode cuts idle power by >80% during motion dwell periods.

Use Scenario: Capturing sensor telemetry from inertial measurement units (IMUs) in flight control computers with ARINC 429 timing constraints.

IC Role / Device Role / Timing Role: High-integrity buffer holding 16-sample bursts from 12-bit ADCs; parity bits (I/OP1/I/OP2) detect single-bit errors in radiation-prone environments.

Use Value: Flow-through output guarantees consistent 7.5ns read latency across all temperatures - eliminates timing margin uncertainty in DO-254-certified designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV25-7BBXC	256K × 32-bit, 7ns access, 133MHz max; uses different burst control (MODE pin instead of LBO); no ZZ sleep pin.	Higher density per byte but incompatible burst addressing; lacks hardware sleep mode - requires external power management.	Select when 32-bit bus width and maximum 133MHz frequency outweigh need for LBO configurability and integrated sleep control.
AS7C3256B-7TIN	256K × 16-bit, 7ns access, 133MHz; asynchronous OE; no burst mode or ADV/LBO pins; simpler control interface.	Non-burst architecture limits throughput in sequential-access workloads; no flow-through output - adds 1-cycle latency.	Select for cost-sensitive, non-burst applications where deterministic 1-cycle read latency suffices and 16-bit data width is acceptable.

Compared with CY7C1371BV25-7BBXC and AS7C3256B-7TIN, the 71V67903S75BQ8 uniquely delivers 512K×18 organization with LBO-selectable burst order and ZZ-controlled sleep - making it optimal for bandwidth-constrained, thermally sensitive, burst-oriented embedded systems where timing predictability and power efficiency are jointly critical.

Availability

71V67903S75BQ8 is available at Aetrix Electronics and suitable for networking line cards, FPGA co-processor memory subsystems, industrial PLC motion controllers, avionics data acquisition buffers, and high-reliability embedded computing requiring stable component supply across extended product lifecycles.

Supply support for 71V67903S75BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and analog solutions for communications, computing, and industrial markets.

The 71V67903S75BQ8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic low-latency memory access in bandwidth-intensive embedded systems where burst-mode efficiency and power-aware operation are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V67903S75BQ8?

The 71V67903S75BQ8 supports up to 117MHz clock frequency with guaranteed 7.5ns access time. This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. At this frequency, the device delivers one valid read or write per clock cycle in burst or single-cycle modes.

Does the 71V67903S75BQ8 support both linear and interleaved burst modes?

Yes, the 71V67903S75BQ8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO=LOW selects linear sequence (00→01→10→11), and LBO=HIGH selects interleaved (00→01→11→10). This configuration is static and must remain stable during operation - changing LBO mid-burst is undefined.

Are BW3 and BW4 functional on the 71V67903S75BQ8?

No, BW3 and BW4 are not applicable to the 71V67903S75BQ8. As confirmed in the datasheet (Note 1, Pin Description Summary), these pins are reserved and unused for the 512K×18 configuration. Only BW1 (controls I/O0–I/O8/I/OP1) and BW2 (controls I/O9–I/O17/I/OP2) are active byte-write enables.

How does the ZZ pin affect power consumption in the 71V67903S75BQ8?

When ZZ is driven HIGH, the 71V67903S75BQ8 enters full sleep mode: internal clock is gated, all outputs go high-Z, and supply current drops to ≤70mA (IZZ). Data retention is guaranteed. Recovery requires ZZ=LOW followed by tZZR ≥100ns before next valid access - no reset or reinitialization needed.

What package type is used for the 71V67903S75BQ8?

The 71V67903S75BQ8 uses a 100-pin thin quad flatpack (TQFP), JEDEC MO-137AC compliant, with 0.5mm lead pitch and 14mm × 20mm body size. The "BQ8" suffix explicitly denotes this TQFP package; alternative packages (e.g., BGA) use different suffixes and are not interchangeable.

71V67903S75BQ8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 117 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 7.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67903S75BQ8 FAQ

1.How can I place an order for 71V67903S75BQ8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67903S75BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V67903S75BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67903S75BQ8 is usually 5 days.

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For technical support, including 71V67903S75BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67903S75BQ8 requirements.

6.How does Aetrix verify that 71V67903S75BQ8 is sourced from the original manufacturer or authorized distributors?

All 71V67903S75BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67903S75BQ8 meets industry standards.

7.What is the process for return or replacement of 71V67903S75BQ8?

All 71V67903S75BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67903S75BQ8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67903S75BQ8 part is unused and in its original packaging.

Return procedure for 71V67903S75BQ8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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